Semiconductor pressure detecting device

• US 6,066,882 A
• Filed: 05/28/1998
• Issued: 05/23/2000
• Est. Priority Date: 01/12/1998
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Kato, Hajime
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US09/085,835
• Time in Patent Office: 726 Days
• Field of Search: 257/414, 257/415, 257/417, 257/418, 257/420, 73/31.06, 73/DIG. 4, 73/756, 73/754, 73/717, 73/722, 73/723, 73/724, 73/725, 73/726, 73/727, 438/50, 438/51
• US Class Current: 257/414
• CPC Class Codes: G01L 19/0038 being part of the housing other details about the housing G01L19/14
• CPC Class Codes: Y10S 73/04 Piezoelectric

Abstract

A semiconductor pressure detecting device which effectively reduces stress that occurs on a base member due to welding between cap and the base member or any external load. The semiconductor pressure detecting device includes a semiconductor sensor element capable of detecting a strain and/or stress that occurs on a thin-walled pressure receiving portion; a pedestal seat for joining and supporting the semiconductor sensor element; a base member for joining and supporting the pedestal seat; and a cap member welded and joined to the base member so as to cover the base member, the pedestal seat and the semiconductor sensor element. A fluid pressure that acts on a pressure chamber is detected by the semiconductor sensor element, the base member has a body portion of a specified thickness and a thin-walled flange portion formed integrally with an outer circumferential portion of the body portion, a flange portion is provided at an opening end of the cap member and is welded and joined to the flange portion of the base member, a thickness of the flange portion of the base member being set substantially equal to or less than a thickness of the flange portion of the cap member.

Claims

1. A semiconductor pressure detecting device comprising:

a semiconductor sensor element capable of detecting a strain and/or stress that occurs on a thin-walled pressure receiving portion;

a pedestal seat for joining and supporting the semiconductor sensor element;

a base member for joining and supporting the pedestal seat; and

a cap member welded and joined to the base member so as to cover the base member, the pedestal seat and the semiconductor sensor element,

wherein a fluid pressure that acts on a pressure chamber formed between an inner wall of the semiconductor sensor element including the pressure receiving portion and a sensor element supporting surface of the pedestal seat is detected by the semiconductor sensor element,

the base member has a body portion of a specified thickness and a thin-walled flange portion formed integrally with an outer circumferential portion of the body portion and forming an L-shaped cross-section therewith,

a flange portion is provided at an opening end of the cap member and is welded and joined to the flange portion of the base member, and

a thickness of the flange portion of the base member is substantially equal to or less than a thickness of the flange portion of the cap member.

2. A semiconductor pressure detecting device comprising:

a semiconductor sensor element capable of detecting a strain and/or stress that occurs on a thin-walled pressure receiving portion;

a pedestal seat for joining and supporting the semiconductor sensor element;

a base member for joining and supporting the pedestal seat; and

a cap member welded and joined to the base member so as to cover the base member, the pedestal seat and the semiconductor sensor element,

wherein a fluid pressure that acts on a pressure chamber formed between an inner wall of the semiconductor sensor element including the pressure receiving portion and a sensor element supporting surface of the pedestal seat is detected by the semiconductor sensor element,

the base member has a body portion of a specified thickness and a thin-walled flange portion formed integrally with an outer circumferential portion of the body portion,

a flange portion is provided at an opening end of the cap member and is welded and joined to the flange portion of the base member, and

an annular recess is provided in a portion of the base member outside the joint portion with the pedestal seat.

3. The semiconductor pressure detecting device according to claim 2, wherein the recess is provided in the flange portion of the base member.

4. The semiconductor pressure detecting device according to claim 2, wherein the recess is provided at the pedestal-seat supporting surface of the body portion of the base member.

5. A semiconductor pressure detecting device comprising:

a semiconductor sensor element capable of detecting a strain and/or stress that occurs on a thin-walled pressure receiving portion;

a pedestal seat for joining and supporting the semiconductor sensor element; and

a base member for joining and supporting the pedestal seat,

wherein fluid is introduced to a pressure chamber formed between an inner wall of the semiconductor sensor element including the pressure receiving portion and a sensor element supporting surface of the pedestal seat via pressure introducing holes provided in the base member and the pedestal seat, respectively,

a fluid pressure that acts on the pressure chamber is detected by the semiconductor sensor element, and

a cross-sectional size of the pressure introducing hole of the base member is smaller than a cross-sectional size of the pressure introducing hole of the pedestal seat.