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Copper alloy seed layer for copper metallization in an integrated circuit

  • US 6,066,892 A
  • Filed: 05/14/1998
  • Issued: 05/23/2000
  • Est. Priority Date: 05/08/1997
  • Status: Expired due to Term
First Claim
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1. A metallization structure, comprising:

  • a dielectric layer comprising silicon and oxygen;

    a copper alloy layer deposited over said dielectric layer comprising copper and less than 10 atomic percent of an alloying element selected from the group consisting of magnesium, aluminum, boron, and tellurium; and

    a substantially pure copper layer deposited over said copper alloy layer.

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