Inspection method and wiring current observation method for semiconductor device

• US 6,066,956 A
• Filed: 11/18/1996
• Issued: 05/23/2000
• Est. Priority Date: 11/21/1995
• Status: Expired due to Term

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Corporation
• Inventors: Nikawa, Kiyoshi
• Primary Examiner(s): Nguyen, Vinh P.
• Application Number:
  US08/751,725
• Time in Patent Office: 1,282 Days
• Field of Search: 324/750, 324/751, 324/752, 324/501, 324/522, 324/765, 250/310, 250/311, 250/492.1, 250/492.2, 438/14, 438/18, 257/40, 257/48
• US Class Current: 324/754.23
• CPC Class Codes: G01R 31/311 of integrated circuits G01R31/31728 takes precedence

Abstract

Infrared laser beam (11) is irradiated onto an integrated circuit (12) as a sample mounted on a sample stage (21) from an infrared laser beam source (23) through a microscope section body (24) and an objective lens (25). A constant voltage source (15) is connected to a power source terminal of the integrated circuit (12). A variation in a current due to a variation in a resistance of a wiring portion due to the irradiation is produced at a ground terminal of the integrated circuit (12). A current variation inspection section (17) detects the current variation. A system control/signal processing section (27) processes the signal and allows an image/waveform display section (28) to display a current image, a defect image or a current waveform. A defect of a wiring may be detected using visible light beam after localization of a suspected failure portion using infrared beam.

Claims

1. An observation method for wiring current in a semiconductor device comprising:

irradiating an infrared beam onto a region of a semiconductor device from at least one of;

a back surface and a front surface of a chip; and

detecting a variation in a current appearing at a predetermined terminal of said semiconductor device said variation being caused by irradiating the infrared beam, thereby observing a wiring current in said region, wherein the infrared beam has a wavelength of more than 1.24 μ

m.

2. The method of claim 1, wherein the infrared laser beam has an energy which is less than 1.0 V obtained by substracting an energy level between a donor level and an acceptor level.

3. An observation method for a semiconductor device comprising:

irradiating an infrared beam onto a region of a semiconductor device from at least one of a back surface and a front surface of a semiconductor chip; and

detecting a variation in an electrical characteristic of the semiconductor device at least one terminal of the semiconductor, said variation being caused by irradiation of the infrared beam, thereby inspecting said region for at least one of wiring current and defects,

wherein the infrared beam has a wavelength of more than 1.24 μ

m.

4. The method of claim 3, wherein the infrared laser beam has an energy which is less than 1.0 V obtained by subtracting an energy level between a donor level and an acceptor level.

5. An observation method for a semiconductor device comprising:

irradiating an infrared beam onto a region of a semiconductor device from at least one of a back surface and a front surface of a semiconductor chip; and

detecting a variation in an electrical characteristic of the semiconductor device at least one terminal of the semiconductor said variation being caused by irradiation of the infrared beam, thereby inspecting said region for at least one of wiring current and defects,

wherein said electrical characteristic comprises a current at a predetermind terminal of said semiconductor device;

wherein the infrared beam has a wavelength of more than 1.24 μ

m.

6. The method of claim 5, wherein the infrared laser beam has an energy which is less than 1.0 V obtained by subtracting an energy level between a donor level and an acceptor level.