Substrate support apparatus and method for fabricating same

• US 6,067,222 A
• Filed: 11/25/1998
• Issued: 05/23/2000
• Est. Priority Date: 11/25/1998
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Hausmann, Gilbert
• Primary Examiner(s): Fleming, Fritz M.
• Application Number:
  US09/200,103
• Time in Patent Office: 545 Days
• Field of Search: 361/230-235, 279/128
• US Class Current: 361/234
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks
• CPC Class Codes: Y10T 279/23 with magnetic or electrostatic means

Abstract

An apparatus for retaining a substrate and method of fabricating same. Specifically, a Johnsen-Rahbek effect electrostatic chuck comprising a chuck body, at least one electrode disposed within said chuck body and a barrier formed around said at least one electrode. The barrier is fabricated of a material selected from the group consisting of conductive materials and semiconductive materials and in one instance is an alloy of a material of which the electrode is fabricated. Alternately, the barrier is formed of a dielectric material that is not the same material of which the chuck body is fabricated. The resultant apparatus provides an electrostatic chuck that has a reduced charge accumulation effect at the electrode/chuck body interface. Reducing charge accumulation maintains the desired electrostatic chucking forces in such a device.

Claims

1. An apparatus for retaining a substrate comprising:

a chuck body;

at least one electrode disposed within said chuck body; and

a non electrically insulating barrier formed around each of said at least one electrodes.

2. The apparatus of claim 1 wherein said chuck body is fabricated of a dielectric material.

3. The apparatus of claim 2 wherein said dielectric material is doped aluminum nitride.

4. The apparatus of claim 2 wherein said barrier is formed of a non-pure dielectric material that is not the same material of which the chuck body is fabricated.

5. The apparatus of claim 4 wherein the barrier material is selected from the group consisting of dosed boron nitride, doped tantalum nitride and doped titanium nitride.

6. The apparatus of claim 1 wherein said at least one electrode is fabricated of a conductive material.

7. The apparatus of claim 6 wherein said conductive material is molybdenum.

8. The apparatus of claim 6 wherein said barrier is fabricated of a material selected from the group consisting of conductive materials and semiconductive materials.

9. The apparatus of claim 8 wherein said barrier is an alloy of a material of which the electrode is fabricated.

10. The apparatus of claim 9 wherein said alloy is molybdenum nitride.

11. The apparatus set forth in claim 1, wherein the barrier limits physical contact between the chuck body and the electrode.

12. An apparatus for retaining a substrate comprising:

an aluminum nitride chuck body;

two molybdenum electrodes disposed within said chuck body; and

a barrier formed around said electrodes wherein said barrier is fabricated from an alloy of said electrodes.

13. The apparatus of claim 12 wherein the alloy is molybdenum nitride.

14. A method for forming an electrostatic chuck comprising a chuck body, at least one electrode disposed within said chuck body and a non electrically insulating barrier disposed around each of said at least one electrode, the method comprising:

(a) providing said at least one electrode;

(b) forming said barrier around each of said at least one electrode; and

(c) providing said barrier/electrode within said chuck body.

15. The method of claim 14 wherein said at least one electrode is fabricated from a material selected from the group consisting of tungsten and molybdenum.

16. The method of claim 14 wherein (b) further comprises coating the electrode with a barrier material by a method selected from the group consisting of physical vapor deposition, chemical vapor deposition, flame spraying, electroplating, heat annealing and plasma annealing.

17. The method of claim 16 wherein the barrier material is selected from the group consisting of conductive and semiconductive materials.

18. The method of claim 17 wherein the barrier material is an alloy of a material for forming the electrode.

19. The method of claim 18 wherein the alloy is molybdenum nitride.

20. The method of claim 14 wherein the chuck body is fabricated from a dielectric material.

21. The method of claim 20 wherein (b) further comprises forming the barrier from a non-pure dielectric material that is not the same dielectric material from which the chuck body was fabricated.

22. The method of claim 21 wherein the non-pure barrier dielectric material is tantalum nitride and the chuck body material is aluminum nitride.

23. The method of claim 14 wherein step (c) further comprises disposing said barrier/electrode amongst layers of uncured chuck body material and then sintering the chuck body and barrier/electrode.

24. The method set forth in claim 14, wherein the barrier limits physical contact between the chuck body and the electrode.