Compound semiconductor light-emitting device of gallium nitride series
First Claim
1. A compound semiconductor light-emitting device having a compound semiconductor (Gax1 Iny1 Alz1 N:
- x1+y1+z1=1, 0≦
x1, y1, z1≦
1) comprising;
an n-type semiconductor layer having at least an n-type clad layer;
an active layer formed on said n-type semiconductor layer;
a p-type semiconductor layer, formed on said active layer, having at least a p-type clad layer;
a smoothing layer of Gax2 Iny2 Alz2 N (x2+y2+z2=1, 0≦
x2, z2≦
1, 0<
y2≦
1) formed in said active layer;
a p-type contact layer, formed on said p-type semiconductor layer, having a p-type impurity added thereto;
a p-side electrode formed on said p-type contact layer; and
an n-side electrode electrically connected with said n-type semiconductor layer.
1 Assignment
0 Petitions
Accused Products
Abstract
There is disclosed a compound semiconductor light-emitting device of gallium nitride series having high reliability, which can be operated by a low threshold current and a low operation voltage without deterioration. The device comprises a p-type semiconductor structure having high carrier concentration, which can easily form a low resistance p-side electrode, and which can uniformly implant carriers to an active layer highly efficiently. A p electrode contact layer having Mg added thereto is used as a p-type semiconductor layer. At least a Gax2 Iny2 Alz2 N (x2+y2+z2=1, 0≦x2, z2≦1, 0<y2≦1) smoothing layer is formed on an active layer than the p-type contact layer. On a surface of the p-type contact layer, there is formed a layered structure having a Pt layer, and a Ti layer containing TiN, and a Ti layer in order. An alloy, formed of Pt-semiconductor, is formed between the p-type contact layer and the Pt layer.
124 Citations
28 Claims
-
1. A compound semiconductor light-emitting device having a compound semiconductor (Gax1 Iny1 Alz1 N:
- x1+y1+z1=1, 0≦
x1, y1, z1≦
1) comprising;an n-type semiconductor layer having at least an n-type clad layer; an active layer formed on said n-type semiconductor layer; a p-type semiconductor layer, formed on said active layer, having at least a p-type clad layer; a smoothing layer of Gax2 Iny2 Alz2 N (x2+y2+z2=1, 0≦
x2, z2≦
1, 0<
y2≦
1) formed in said active layer;a p-type contact layer, formed on said p-type semiconductor layer, having a p-type impurity added thereto; a p-side electrode formed on said p-type contact layer; and an n-side electrode electrically connected with said n-type semiconductor layer. - View Dependent Claims (2)
- x1+y1+z1=1, 0≦
-
3. A compound semiconductor light-emitting device having a compound semiconductor (Gax1 Iny1 Alz1 N:
- x1+y1+z1=1, 0≦
x1, y1, z1≦
1) comprising;an n-type semiconductor layer having at least an n-type clad layer; an active layer formed on said n-type semiconductor layer; a p-type semiconductor layer, formed on said active layer, having at least a p-type clad layer; a smoothing layer of Gax2 Iny2 Alz2 N (x2+y2+z2=1, 0≦
x2, z2≦
1, 0<
y2≦
1) formed in said active layer;a p-type contact layer, formed on said p-type semiconductor layer, having a p-type impurity added thereto; an alloy layer, made of Pt-semiconductor, selectively formed on a surface of said p-type contact layer; a p-side electrode, containing a layered structure made of a Pt layer formed on said alloy layer, a Ti layer containing TiN, thereon, and a Ti layer thereon; and an n-side electrode electrically connected with said n-type semiconductor layer. - View Dependent Claims (4, 5, 6, 7, 8)
- x1+y1+z1=1, 0≦
-
9. A compound semiconductor light-emitting device having a compound semiconductor (Gax1 Iny1 Alz1 N:
- x1+y1+z1=1, 0≦
x1, y1, z1<
1) comprising;an n-type-semiconductor layer having at least an n-type clad layer; an active layer, formed on said n-type semiconductor layer, having a multi-quantum well structure having well layers, formed of at least Gax3 Iny3 Alz3 N (x3+y3+z3=1, 0≦
x3, y3, z3≦
1) and barrier layers, formed of Gax4 Iny4 Alz4 N (x4+y4+z4=1, 0≦
x4, y4, z4≦
1), alternatively layered;a p-type semiconductor layer, formed on said active layer, having at least a p-type clad layer; a smoothing layer of Gax2 Iny2 Alz2 N (x2+y2+z2=1, 0≦
x2, z2<
1, 0<
y2≦
1) formed in said p-type semiconductor layer;a p-type contact layer, formed on said p-type semiconductor layer, having a p-type impurity added thereto; a p-side electrode formed on said p-type contact layer; and an n-side electrode electrically connected with said n-type semiconductor layer, wherein said Gax2 Iny2 Alz2 N smoothing layer is formed to be thicker than the thickness of said well layer when In composition y2 is lower than In composition y3 of said well layer. - View Dependent Claims (10, 11)
- x1+y1+z1=1, 0≦
-
12. A compound semiconductor light-emitting device having a compound semiconductor (Gax1 Iny1 Alz1 N:
- x1+y1+z1=1, 0≦
x1, y1, z1≦
1)comprising;an n-type semiconductor layer having at least an n-type clad layer; an active layer, formed on said n-type semiconductor layer, having a multi-quantum well structure having well layers, formed of at least Gax3 Iny3 Alz3 N (x3+y3+z3=1, 0≦
x3, y3, z3≦
1), and barrier layers, formed of Gax4 Iny4 Alz4 N (x4+y4+z4=1, 0≦
x4, y4, z4≦
1) alternatively layered;a p-type semiconductor layer, formed on said active layer, having at least a p-type clad layer; a smoothing layer of Gax2 Iny2 Alz2 N (x2+y2+z2=1, 0≦
x2, z2≦
1, 0<
y2≦
1) formed in said p-type semiconductor layer;a p-type contact layer, formed on said p-type semiconductor layer, having a p-type impurity added thereto; a p-side electrode formed on said p-type contact layer; and an n-side electrode electrically connected with said n-type semiconductor layer, wherein said n-type semiconductor layer, wherein said Gax2 Iny2 Alz2 N smoothing layer is formed to be thinner than the thickness of said well layer when In composition y2 is higher than In composition y3 of said well layer. - View Dependent Claims (13)
- x1+y1+z1=1, 0≦
-
14. A compound semiconductor light-emitting device having a compound semiconductor (Gax1 Iny1 Alz1 N:
- x1+y1+z1=1, 0≦
x1, y1, z1≦
1) (comprising;an n-type clad layer; an n-type waveguide layer formed on said n-type clad layer; an active layer formed on said waveguide layer; a p-type waveguide layer, formed on said active layer, having a stripe ridge; a block layer selectively formed on along a side portion of the ridge of said p-type waveguide layer; a smoothing layer of Gax2 Iny2 Alz2 N (x2+y2+z2=1, x2, z2≦
1, 0<
y2≦
1) formed on said block layer and the ridge of said p-type waveguide layer;a p-type clad layer formed on said Gax2 Iny2 Alz2 N smoothing layer; a p-type contact layer, formed on said p-type clad layer, having a p-type impurity added thereto; a p-side electrode formed on said p-type contact layer; and an n-side electrode electrically connected with said n-type semiconductor layer, wherein said block layer is formed of Gax5 Iny5 Alz5 N (x5+y5+z5=1, 0≦
x5, y5≦
1, 0≦
z5≦
1). - View Dependent Claims (15, 16)
- x1+y1+z1=1, 0≦
-
17. A compound semiconductor light-emitting device having a compound semiconductor (Gax1 Iny1 Alz1 N:
- x1+y1+z1=1, 0≦
x1, y1, z1≦
1) comprising;an n-type clad layer; an n-type waveguide layer formed on said n-type clad layer; an active layer formed on said n-type waveguide layer; a p-type waveguide layer, formed on said active layer, having a stripe ridge; a block layer selectively formed on along a side portion of the ridge of said p-type waveguide layer; a smoothing layer of Gax2 Iny2 Alz2 N (x2+y2+z2=1, x2, z2≦
1, 0<
y2≦
1) formed on said block layer and the ridge of said p-type conductive layer;a p-type clad layer formed on said Gax2 Iny2 Alz2 N smoothing layer; a p-type contact layer, formed on said p-type clad layer, having a p-type impurity added thereto; a p-side electrode formed on said p-type contact layer; and an n-side electrode electrically connected with said n-type semiconductor layer, wherein said block layer is formed of Gax5 Iny5 Alz5 N (x5+y5+z5=1,0≦
x5, z5≦
1, 0<
y5≦
1). - View Dependent Claims (18, 19)
- x1+y1+z1=1, 0≦
-
20. A compound semiconductor light-emitting device having a compound semiconductor (Gax1 Iny1 Alz1 N:
- x1+y1+z1=1, 0≦
x1, y1, z1≦
1) comprisingan n-type semiconductor layer having at least an n-type clad layer; an active layer formed on said n-type semiconductor layer; a p-type semiconductor layer, formed on said active layer, having at least a p-type clad layer; a smoothing layer of Gax2 Iny2 Alz2 N (x2+y2+z2=1, 0≦
x2, z2≦
1, 0<
y2≦
1) formed in said p-type semiconductive layer;a p-type contact layer, formed on said p-type semiconductor layer, having a p-type impurity added thereto; a p-side electrode formed on said p-type contact layer; and an n-side electrode electrically connected with said n-type semiconductor layer. - View Dependent Claims (21, 22)
- x1+y1+z1=1, 0≦
-
23. A compound semiconductor light-emitting device having a compound semiconductor (Gax1 Iny1 Alz1 N:
- x1+y1+z1=1, 0≦
x1, y1, z1≦
1) comprising;an n-type semiconductor layer having at least an n-type clad layer; an active layer formed on said n-type semiconductor layer; a p-type semiconductor layer, formed on said active layer, having at least a p-type clad layer; a smoothing layer of Gax2 Iny2 Alz2 N (x2+y2+z2=1, 0≦
x2, z2≦
1, 0<
y2≦
1) formed in said p-type semiconductor layer;a p-type contact layer, formed on said p-type semiconductor layer, having a p-type impurity added thereto, an alloy layer, made of Pt-semiconductor, selectively formed on a surface of said p-type contact layer; a p-side electrode, containing a layered structure made of a Pt layer formed on said alloy layer, a Ti layer containing TiN, thereon, and a Ti layer thereon; and an n-side electrode electrically connected with said n-type semiconductor layer. - View Dependent Claims (24, 25, 26, 27, 28)
- x1+y1+z1=1, 0≦
Specification