Semiconductor manufacturing system with getter safety device

• US 6,068,685 A
• Filed: 10/15/1997
• Issued: 05/30/2000
• Est. Priority Date: 10/15/1997
• Status: Expired due to Term

• Current Assignee: SAES Pure Gas (Entegris Incorporated)
• Original Assignee: SAES Pure Gas (Entegris Incorporated)
• Inventors: Applegarth, Charles H., Lorimer, D'Arcy H.
• Primary Examiner(s): BUSHEY, CHARLES S
• Application Number:
  US08/950,929
• Time in Patent Office: 958 Days
• Field of Search: 96/112, 96/117.5, 96/151, 96/154, 95/116, 95/127, 95/130, 95/138
• US Class Current: 96/112
• CPC Class Codes: B01D 2258/0216 from CVD treatment or semi-conductor manufacturing
• CPC Class Codes: B01D 53/0423 Beds in columns
• CPC Class Codes: B01D 53/0446 Means for feeding or distributing gases
• CPC Class Codes: B01D 53/0454 Controlling adsorption controlling temperature swing adsorption B01D53/0462, controlling pressure swing adsorption B01D53/047
• CPC Class Codes: B01D 53/30 Controlling by gas-analysis apparatus regulating non electrical variables in general G05D
• CPC Class Codes: B01D 53/346 Controlling the process
• CPC Class Codes: C23C 16/4402 Reduction of impurities in the source gas
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases
• CPC Class Codes: Y10S 438/909 Controlled atmosphere

Abstract

A semiconductor manufacturing system includes a getter-based gas purifier coupled in flow communication with a gas distribution network for a semiconductor fabrication facility. The gas distribution network supplies purified gas to at least one wafer processing chamber in the semiconductor fabrication facility. The gas purifier includes a getter column having a metallic vessel with an inlet, an outlet, and a containment wall extending between the inlet and the outlet. Getter material which purifies gas flowing therethrough by sorbing impurities therefrom is disposed in the vessel. A first temperature sensor is disposed in a top portion of the getter material. The first temperature sensor is located in a melt zone to detect rapidly the onset of an exothermic reaction which indicates the presence of excess impurities in the incoming gas to be purified. A second temperature sensor is disposed in a bottom portion of the getter material. The second temperature sensor is located in a melt zone to detect rapidly the onset of an exothermic reaction which indicates that excess impurities are being backfed into the getter column. First and second high melting point, nonmetallic liners are disposed in the vessel such that at least some of the top and bottom portions, respectively, of the getter material is separated from the containment wall of the vessel. A getter-based gas purifier, a method of making an integrated circuit device, and a method of protecting a getter column are also described.

Claims

1. A semiconductor manufacturing system, comprising:

a getter-based gas purifier coupled in flow communication with a gas distribution network for a semiconductor fabrication facility, said gas distribution network supplying purified gas to at least one wafer processing chamber in said semiconductor fabrication facility, wherein said gas purifier comprises;

a getter column having a metallic vessel with an inlet, an outlet, and a containment wall extending between said inlet and said outlet, the getter column further having a first high melting point, nonmetallic liner disposed in the vessel such that at least some of the top portion of getter material disposed in said vessel is separated from the containment wall of the vessel and a second high melting point, nonmetallic liner disposed in the vessel such that at least some of the bottom portion of the getter material is separated from the containment wall of the vessel;

a first temperature sensor disposed in a top portion of said getter material, said first temperature sensor being located in a melt zone; and

a second temperature sensor disposed in a bottom portion of said getter material, said second temperature sensor being located in a melt zone.

2. The system of claim 1, wherein the first and second high melting point, nonmetallic liners are comprised of a ceramic material.

3. The system of claim 1, wherein the first and second high melting point, nonmetallic liners are comprised of a material selected from the group consisting of quartz, zirconia (ZrO₂), SiC, SiN, and Al₂ O₃.

4. The system of claim 1, wherein the gas purifier further includes a control unit coupled to the first and second temperature sensors for measuring temperatures sensed by the first and second temperature sensors, said control unit actuating at least one isolation valve to isolate the getter column when a first alarm temperature is measured and actuating a vent valve to vent gas from the getter column when a second alarm temperature is measured.

5. The system of claim 1, wherein the first and second temperature sensors are thermocouple elements.

6. A semiconductor manufacturing system, comprising:

a getter-based gas purifier coupled in flow communication with a gas distribution network for a semiconductor fabrication facility, said gas distribution network supplying purified gas to at least one wafer processing chamber in said semiconductor fabrication facility, wherein said gas purifier comprises;

a getter column having a metallic vessel with an inlet, an outlet, and a containment wall extending between said inlet and said outlet;

getter material disposed in said vessel;

a first high melting point, nonmetallic liner disposed in said vessel such that a top portion of said getter material is separated from said containment wall of said vessel;

a first temperature sensor disposed in said top portion of said getter material, said first temperature sensor being located about 0.5 inch to about 2.5 inches below the top surface of the getter material;

a second high melting point, nonmetallic liner disposed in said vessel such that a bottom portion of said getter material is separated from said containment wall of said vessel; and

a second temperature sensor disposed in said bottom portion of said getter material, said second temperature sensor being located about 0.5 inch to about 2.5 inches above the bottom surface of the getter material.

7. The system of claim 6, wherein the first and second high melting point, nonmetallic liners are comprised of a ceramic material.

8. The system of claim 6, wherein the first and second high melting point, nonmetallic liners are comprised of a material selected from the group consisting of quartz, zirconia (ZrO₂), SiC, SiN, and Al₂ O₃.

9. The system of claim 6, wherein the getter column further includes:

a porous support member disposed in the vessel, said support member supporting the getter material; and

a barrier material disposed on said support member, said barrier material separating the getter material from the support member.

10. The system of claim 9, wherein the support member is comprised of a metallic plate and the barrier material is comprised of stainless steel shot.

11. The system of claim 6, wherein the gas purifier further includes a control unit coupled to the first and second temperature sensors for measuring temperatures sensed by the first and second temperature sensors, said control unit actuating at least one isolation valve to isolate the getter column when a first alarm temperature is measured and actuating a vent valve to vent gas from the getter column when a second alarm temperature is measured.

12. The system of claim 6, wherein the first and second temperature sensors are thermocouple elements.

13. A semiconductor manufacturing system, comprising:

a getter-based gas purifier coupled in flow communication with a gas distribution network for a semiconductor fabrication facility, said gas distribution network supplying purified gas to at least one wafer processing chamber in said semiconductor fabrication facility, wherein said gas purifier comprises;

a setter column having a metallic vessel with an inlet, an outlet, and a containment wall extending between said inlet and said outlet, wherein said getter column further includes an upper high melting point, nonmetallic liner disposed in said vessel such that at least some of the top portion of said getter material is separated from said containment wall of said vessel;

getter material disposed in said vessel;

a first temperature sensor that is a thermocouple element, the first temperature sensor disposed in a top portion of said getter material, said first temperature sensor being located a distance below a top surface of said getter material, said distance being from just above 0 inches to just below 3 inches;

a second temperature sensor that is a thermocouple element, the second temperature sensor disposed in a bottom portion of said getter material;

said second temperature sensor being located a distance above a bottom surface of said getter material, said distance being from just above 0 inches to just below 3 inches; and

a lower high melting point, nonmetallic liner disposed in said vessel such that at least some of said bottom portion of said getter material is separated from said containment wall of said vessel.

14. The system of claim 13, wherein the upper and lower high melting point, nonmetallic liners are comprised of a ceramic material.

15. The system of claim 13, wherein the upper and lower high melting point, nonmetallic liners are comprised of a material selected from the group consisting of quartz, zirconia (ZrO₂), SiC, SiN, and Al₂ O₃.

16. A semiconductor manufacturing system, comprising:

a getter-based gas purifier coupled in flow communication with a gas distribution network for a semiconductor fabrication facility said gas distribution network supplying purified gas to at least one wafer processing chamber in said semiconductor fabrication facility, wherein said gas purifier comprises;

a getter column having a metallic vessel with an inlet, an outlet, and a containment wall extending between said inlet and said outlet;

getter material disposed in said vessel;

a first temperature sensor that is a thermocouple element, the first temperature sensor disposed in a top portion of said getter material, said first temperature sensor being located a distance below a top surface of said getter material, said distance being from just above 0 inches to just below 3 inches;

a second temperature sensor that is a thermocouple element, the second temperature sensor disposed in a bottom portion of said getter material;

said second temperature sensor being located a distance above a bottom surface of said getter material, said distance being from just above 0 inches to just below 3 inches;

a lower high melting point. nonmetallic liner disposed in said vessel such that at least some of said bottom portion of said getter material is separated from said containment wall of said vessel; and

a control unit coupled to said first and second temperature sensors for measuring temperatures sensed by said first and second temperature sensors, said control unit actuating at least one isolation valve to isolate said getter column when a first alarm temperature is measured and actuating a vent valve to vent gas from said getter column when a second alarm temperature is measured.

17. A getter-based gas purifier, comprising:

a getter column having a metallic vessel with an inlet, an outlet, and a containment wall extending between said inlet and said outlet, said vessel having getter material disposed therein;

a first isolation valve in flow communication with said inlet of said vessel;

a vent valve in flow communication with said inlet of said vessel;

a second isolation valve in flow communication with said outlet of said vessel;

a first temperature sensor disposed in a top portion of said getter material;

a second temperature sensor disposed in a bottom portion of said getter material; and

a control unit coupled to said first and second temperature sensors, said first and second isolation valves, and said vent valve, wherein said control unit measures temperatures sensed by said first and second temperature sensors and, when a temperature above a first alarm temperature is measured, actuates said first and second isolation valves to isolate said getter column and, when a temperature above a second alarm temperature is measured, actuates said vent valve to vent gas from said getter column.

18. The gas purifier of claim 17, wherein the first isolation valve is in flow communication with a source of feed gas to be purified, the second isolation valve is in flow communication with an outlet for purified gas, and the gas purifier further includes a bypass valve in flow communication with said source of feed gas and said outlet for purified gas, wherein the control unit opens said bypass valve when a temperature above the first alarm temperature is measured and, when a temperature above a third alarm temperature is measured, closes said bypass valve.

19. The gas purifier of claim 17, wherein the first temperature sensor is located about 0.5 inch to about 2.5 inches below a top surface of the getter material and the second temperature sensor is located about 0.5 inch to about 2.5 inches above a bottom surface of the getter material.

20. The gas purifier of claim 17, wherein the first temperature sensor is located about 1 inch to about 2 inches below a top surface of the getter material and the second temperature sensor is located about 1 inch to about 2 inches above a bottom surface of the getter material.

21. The gas purifier of claim 17, wherein the getter column further includes a first high melting point, nonmetallic liner disposed in the vessel such that at least some of the top portion of the getter material is separated from the containment wall of the vessel and a second high melting point, nonmetallic liner disposed in the vessel such that at least some of the bottom portion of the getter material is separated from the containment wall of the vessel.

22. The gas purifier of claim 21, wherein the first and second high melting point, nonmetallic liners are comprised of a ceramic material.

23. The gas purifier of claim 21, wherein the first and second high melting point, nonmetallic liners are comprised of a material selected from the group consisting of quartz, zirconia (ZrO₂), SiC, SiN, and Al₂ O₃.

24. The gas purifier of claim 17, wherein the getter column further includes:

a porous support member disposed in the vessel, said support member supporting the getter material; and

a barrier material disposed on said support member, said barrier material separating the getter material from the support member.

25. The gas purifier of claim 24, wherein the support member is a plate comprised of stainless steel and the barrier material is comprised of stainless steel shot.

26. The gas purifier of claim 17, wherein the first and second temperature sensors are thermocouple elements.

27. The gas purifier of claim 17, wherein the first alarm temperature is about 10°

C. to about 100°

C. above a normal operating temperature of the getter column and the second alarm temperature is at least about 100°

C. above a normal operating temperature of the getter column.

28. The gas purifier of claim 18, wherein the first alarm temperature is about 10°

C. to about 100°

C. above a normal operating temperature of the getter column, the second alarm temperature is at least about 100°

C. above a normal operating temperature of the getter column, and the third alarm temperature is at least about 200°

C. above a normal operating temperature of the getter column.

29. The gas purifier of claim 17, wherein the first alarm temperature is about 40°

C. to about 60°

C. above a normal operating temperature of the getter column and the second alarm temperature is at least about 100°

C. above a normal operating temperature of the getter column.

30. The gas purifier of claim 18, wherein the first alarm temperature is about 40°

C. to about 60°

C. above a normal operating temperature of the getter column, the second alarm temperature is at least about 100°

C. above a normal operating temperature of the getter column, and the third alarm temperature is at least about 300°

C. above a normal operating temperature of the getter column.

31. The gas purifier of claim 17, wherein the first alarm temperature is about 410°

C. to about 500°

C. and the second alarm temperature is at least about 500°

C.

32. The gas purifier of claim 18, wherein the first alarm temperature is about 410°

C. to about 500°

C., the second alarm temperature is at least about 500°

C., and the third alarm temperature is at least about 600°

C.

33. The gas purifier of claim 17, wherein the first alarm temperature is about 440°

C. to about 460°

C. and the second alarm temperature is at least about 500°

C.

34. The gas purifier of claim 18, wherein the first alarm temperature is about 440°

C. to about 460°

C., the second alarm temperature is at least about 500°

C., and the third alarm temperature is at least about 700°

C.