Two step process for cleaning a substrate processing chamber
First Claim
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1. A substrate processing system comprising:
- a housing defining a chamber;
a gas distribution system adapted to introduce one or more gases into said chamber;
a plasma generation system operatively coupled to form a plasma within said chamber;
a controller for controlling said gas distribution system and said plasma generation system; and
a memory coupled to said controller comprising a computer readable medium having a computer readable program embodied therein for directing operation of said substrate processing system, said computer readable program comprising;
computer instructions that control said gas distribution system to flow a first cleaning process gas into said chamber, said first cleaning process gas comprising ozone and a fluorine-containing compound;
computer instructions that control said plasma generation system to form a plasma from said first cleaning process gas and maintain said plasma for a first time period;
computer instructions that control said gas distribution system to flow, after flowing said first cleaning process gas, a second cleaning process gas into said chamber, said second cleaning process gas comprising a compound selected from the group consisting of perfluorocarbons, fluorine, nitrogen, and combinations of fluorine and nitrogen; and
computer instructions that control said plasma generation system to form a plasma from said second cleaning process gas and maintain said plasma for a second time period.
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Abstract
A method and apparatus for removing particles from an interior surface of a processing chamber using a two-step cleaning process. The method includes introducing a first cleaning process gas into the processing chamber, applying energy to that first cleaning process gas to remove particles from the processing chamber'"'"'s interior surface, and introducing a second cleaning process gas into the processing chamber to remove a cleaning residue formed by a reaction between the first cleaning process gas and the processing chamber'"'"'s interior surface. Removing or gettering the cleaning residue from the chamber wall improves the quality of the wafers formed in the process.
123 Citations
15 Claims
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1. A substrate processing system comprising:
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a housing defining a chamber; a gas distribution system adapted to introduce one or more gases into said chamber; a plasma generation system operatively coupled to form a plasma within said chamber; a controller for controlling said gas distribution system and said plasma generation system; and a memory coupled to said controller comprising a computer readable medium having a computer readable program embodied therein for directing operation of said substrate processing system, said computer readable program comprising; computer instructions that control said gas distribution system to flow a first cleaning process gas into said chamber, said first cleaning process gas comprising ozone and a fluorine-containing compound; computer instructions that control said plasma generation system to form a plasma from said first cleaning process gas and maintain said plasma for a first time period; computer instructions that control said gas distribution system to flow, after flowing said first cleaning process gas, a second cleaning process gas into said chamber, said second cleaning process gas comprising a compound selected from the group consisting of perfluorocarbons, fluorine, nitrogen, and combinations of fluorine and nitrogen; and computer instructions that control said plasma generation system to form a plasma from said second cleaning process gas and maintain said plasma for a second time period. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A substrate processing system comprising:
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a housing defining a chamber; a gas distribution system adapted to introduce one or more gases into said chamber; a plasma generation system operatively coupled to form a plasma within said chamber; a controller for controlling said gas distribution system and said plasma generation system; and a memory coupled to said controller comprising a computer readable medium having a computer readable program embodied therein for directing operation of said substrate processing system, said computer readable program comprising; computer instructions that control said gas distribution system to flow a first cleaning process gas into said chamber, said first cleaning process gas comprising C2 F6 and ozone; computer instructions that control said plasma generation system to form a plasma from said first cleaning process gas by applying said RF power at a first RF power density of between about 1.38 W/cm2 for a first time period and then reduce said RF power density to between about 0.79 W/cm2 and 1.19 W/cm2 during a subsequent, second time period.
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12. A substrate processing system comprising:
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a housing defining a chamber; a gas distribution system adapted to introduce one or more gases into said chamber; a plasma generation system operatively coupled to form a plasma within said chamber; a controller for controlling said gas distribution system and said plasma generation system; and a memory coupled to said controller comprising a computer readable medium having a computer readable program embodied therein for directing operation of said substrate processing system, said computer readable program comprising; computer instructions that control said gas distribution system to flow a cleaning process gas into said chamber, said cleaning process gas comprising a fluorine-containing compound; computer instructions that control said plasma generation system to form a plasma from said first cleaning process gas by applying said RF power at a first RF power density of between about 1.38 W/cm2 and 3.95 W/cm2 for a first time period and then reduce said RF power density to between about 0.79 W/cm2 and 1.19 W/cm2 during a subsequent, second time period. - View Dependent Claims (13, 14, 15)
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Specification