In-situ and non-intrusive method for monitoring plasma etch chamber condition utilizing spectroscopic technique

• US 6,068,783 A
• Filed: 04/28/1998
• Issued: 05/30/2000
• Est. Priority Date: 04/28/1998
• Status: Expired due to Term

• Current Assignee: Winbond Electronics Corporation
• Original Assignee: Winbond Electronics Corporation
• Inventors: Szetsen, Steven Lee
• Primary Examiner(s): Nuzzolillo, Maria
• Assistant Examiner(s): TSANG FOSTER, SUSY N
• Application Number:
  US09/067,970
• Time in Patent Office: 763 Days
• Field of Search: 438/7, 438/8, 438/9, 438/14, 438/710, 438/714, 438/16, 216/59, 216/60
• US Class Current: 216/60
• CPC Class Codes: G01N 21/68 using high frequency electric fields
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32972 Spectral analysis

Abstract

A spectroscopic method is disclosed to provide a non-intrusive and in-situ monitoring of plasma etching conditions during the fabrication of semiconductor devices using RF power. It includes the steps of: (a) selecting a single plasma gas as a probe, in a cleaned plasma etch chamber; (b) measuring the spectral intensities of the plasma gas; and (c) plotting the measured spectral intensities either directly or indirectly against the RF time. A single plasma gas is selected which exhibits opposite relationships with RF time at two respective wavelengths.

Claims

1. A method for monitoring etching conditions in a plasma etch chamber comprising the steps of:

(a) selecting a single plasma gas as a probe; and

(b) measuring a spectral intensity of said plasma gas at a pair of predetermined wavelengths;

wherein

(i) said pair of wavelengths are selected such that the spectral intensity at one wavelength will increase with RF time and the spectral intensity at another wavelength will decrease with RF time; and

(ii) the etching conditions are monitored by plotting a ratio of the spectral intensities at said pair of wavelengths against said RF time.

2. The method for monitoring etching conditions in a plasma etch chamber according to claim 1 wherein said single plasma gas is CO.

3. The method for monitoring etching conditions in a plasma etch chamber according to claim 2 wherein said pair of wavelengths are 439 nm and 693 nm, corresponding to the energy states of CO at d³ π

(vπ

=10) and a³ π

(v'"'"'=2), respectively.

4. The method for monitoring etching conditions in a plasma etch chamber according to claim 1 which further comprises the steps of:

(a) selecting a reference wavelength whose spectral intensity remains relatively constant with respect to RF time, and measuring the spectral intensity at said reference wavelength as a reference intensity; and

(b) plotting a ratio of the spectral intensities of said probe and said reference wavelength against said RF time.

5. A plasma etching and monitoring method for etching semiconductor wafers or substrates, comprising the steps of:

(a) obtaining a plasma etching chamber connected to a spectral intensity measuring and analyzing means via an optical conduit;

(b) introducing a plurality of plasma gases into said plasma etching chamber;

(c) selecting a single plasma gas as a probe;

(d) proceeding a plasma etching process using an RF power source; and

(e) measuring a spectral intensity of said single plasma gas at a pair of predetermined wavelengths;

wherein

(i) said pair of wavelengths are selected such that the spectral intensity at one wavelength will increase with RF time and the spectral intensity at another wavelength will decrease with RF time; and

(ii) the etching condition of said plasma etch chamber is monitored by plotting a ratio of the spectral intensities at said pair of wavelengths against said RF time.

6. The plasma etching and monitoring method according to claim 5 wherein said single plasma gas is CO.

7. The plasma etching and monitoring method according to claim 6 wherein said pair of wavelengths are 439 nm and 693 nm, corresponding to the energy states of CO at d³ π

(v'"'"'=10) and a³ π

(v'"'"'=2), respectively.

8. The plasma etching and monitoring method according to claim 5 which further comprises the steps of:

(a) selecting a reference wavelength whose spectral intensity remains relatively constant with respect to RF time, and measuring the spectral intensity at said reference wavelength as a reference intensity; and

(b) plotting a ratio of the spectral intensities of said probe and said reference wavelength against said RF time.