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In-situ and non-intrusive method for monitoring plasma etch chamber condition utilizing spectroscopic technique

  • US 6,068,783 A
  • Filed: 04/28/1998
  • Issued: 05/30/2000
  • Est. Priority Date: 04/28/1998
  • Status: Expired due to Term
First Claim
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1. A method for monitoring etching conditions in a plasma etch chamber comprising the steps of:

  • (a) selecting a single plasma gas as a probe; and

    (b) measuring a spectral intensity of said plasma gas at a pair of predetermined wavelengths;

    wherein(i) said pair of wavelengths are selected such that the spectral intensity at one wavelength will increase with RF time and the spectral intensity at another wavelength will decrease with RF time; and

    (ii) the etching conditions are monitored by plotting a ratio of the spectral intensities at said pair of wavelengths against said RF time.

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