In-situ and non-intrusive method for monitoring plasma etch chamber condition utilizing spectroscopic technique
First Claim
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1. A method for monitoring etching conditions in a plasma etch chamber comprising the steps of:
- (a) selecting a single plasma gas as a probe; and
(b) measuring a spectral intensity of said plasma gas at a pair of predetermined wavelengths;
wherein(i) said pair of wavelengths are selected such that the spectral intensity at one wavelength will increase with RF time and the spectral intensity at another wavelength will decrease with RF time; and
(ii) the etching conditions are monitored by plotting a ratio of the spectral intensities at said pair of wavelengths against said RF time.
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Abstract
A spectroscopic method is disclosed to provide a non-intrusive and in-situ monitoring of plasma etching conditions during the fabrication of semiconductor devices using RF power. It includes the steps of: (a) selecting a single plasma gas as a probe, in a cleaned plasma etch chamber; (b) measuring the spectral intensities of the plasma gas; and (c) plotting the measured spectral intensities either directly or indirectly against the RF time. A single plasma gas is selected which exhibits opposite relationships with RF time at two respective wavelengths.
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Citations
8 Claims
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1. A method for monitoring etching conditions in a plasma etch chamber comprising the steps of:
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(a) selecting a single plasma gas as a probe; and (b) measuring a spectral intensity of said plasma gas at a pair of predetermined wavelengths;
wherein(i) said pair of wavelengths are selected such that the spectral intensity at one wavelength will increase with RF time and the spectral intensity at another wavelength will decrease with RF time; and (ii) the etching conditions are monitored by plotting a ratio of the spectral intensities at said pair of wavelengths against said RF time. - View Dependent Claims (2, 3, 4)
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5. A plasma etching and monitoring method for etching semiconductor wafers or substrates, comprising the steps of:
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(a) obtaining a plasma etching chamber connected to a spectral intensity measuring and analyzing means via an optical conduit; (b) introducing a plurality of plasma gases into said plasma etching chamber; (c) selecting a single plasma gas as a probe; (d) proceeding a plasma etching process using an RF power source; and (e) measuring a spectral intensity of said single plasma gas at a pair of predetermined wavelengths;
wherein(i) said pair of wavelengths are selected such that the spectral intensity at one wavelength will increase with RF time and the spectral intensity at another wavelength will decrease with RF time; and (ii) the etching condition of said plasma etch chamber is monitored by plotting a ratio of the spectral intensities at said pair of wavelengths against said RF time. - View Dependent Claims (6, 7, 8)
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Specification