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Fixed abrasive polishing system for the manufacture of semiconductor devices, memory disks and the like

  • US 6,069,080 A
  • Filed: 08/24/1998
  • Issued: 05/30/2000
  • Est. Priority Date: 08/19/1992
  • Status: Expired due to Fees
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First Claim
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1. A method of manufacturing a memory disk or a semiconductor device, comprising:

  • placing an aqueous fluid between a substrate and a fixed abrasive pad, the fluid having a consistent pH whereby the pH varies by less than ±

    3 during polishing, the substrate being a precursor to the memory disk or a precursor to the semiconductor device, the substrate further comprising a substrate surface, the fixed abrasive pad having a three dimensional fixed abrasive polishing layer wherein the three dimensional fixed abrasive polishing layer exhibits a plurality of protrusions having recesses between the protrusions, the fixes abrasive polishing layer having a plurality of nanoasperities, the fixed abrasive polishing layer comprising a plurality of particles, whereby the average particle size multiplied by the particle'"'"'s valley abrasion number is less than 300, the polishing layer further comprising a polishing surface;

    moving the polishing surface and the substrate surface relative to and biased toward one another as at least a portion of the fluid is maintained between the surfaces, the fluid between the surfaces acting to prevent at least 20% of the surfaces, on average, from touching one another during polishing;

    biasing the surfaces together by applying a uniform pressure of less than 25 pounds per square inch and compressing the polishing surface by less than 15 microns, thereby chemically and mechanically polishing the substrate surface to thereby increase the planarity of the substrate surface;

    releasing at least a portion of the articles from the fixed a pad during polish into the polishing interface, thereby creating a plurality of new nanoasperities at the polishing interface;

    varying the surface of the fixed abrasive pad at the polishing interface by less than 10% during the polishing operation;

    wherein said polishing layer has a matrix material as a continuous phase and said particles as a discontinuous phase, said matrix material having;

    i. a density greater than 0.5 g/cm3 ;

    ii. a critical surface tension greater than or equal to 34 milliNewtons per meter;

    iii. a tensile modulus of 0.02 to 5 GigaPascals;

    iv. a ratio of tensile modulus at 30°

    C. to tensile modulus at 60°

    C. of 1.0 to 2.5;

    v. a hardness of 25 to 80 Shore D;

    vi. a yield stress of 300-6000 psi;

    vii. a tensile strength of 1000 to 15,000 psi; and

    viii. an elongation to break less than or equal to 500%.

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