Insulated gate type semiconductor device with potential detection gate for overvoltage protection

• US 6,069,372 A
• Filed: 07/16/1998
• Issued: 05/30/2000
• Est. Priority Date: 01/22/1998
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Uenishi, Akio
• Primary Examiner(s): HARDY, DAVID B
• Application Number:
  US09/116,342
• Time in Patent Office: 684 Days
• Field of Search: 257/139, 257/140, 257/355-356, 257/360
• US Class Current: 257/139
• CPC Class Codes: H01L 29/7395 Vertical transistors, e.g. vertical IGBT
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

Abstract

Internal gate electrodes (71) are all connected in common to a gate terminal, and a floating gate electrode (72) is connected to the gate electrode of an NMOS transistor (M1). An external emitter electrode (91) is provided on a first major surface of P-type diffused lease region (21), and N-type diffused emitter region (31) and P-type diffused base region (21) are short-circuited. The source of the NMOS transistor (M1) and an emitter terminal are also connected to the external emitter electrode (91). The drain of the NMOS transistor (M1) is connected to an external terminal.

Claims

1. An insulated gate type semiconductor device comprising:

a semiconductor substrate;

first and second current electrodes sandwiching said semiconductor substrate;

a potential detection gate in a floating state for detecting a monitor potential that depends on a potential difference between said first and second current electrodes; and

a drive gate insulated from said first and second current electrodes, for driving said first and second current electrodes to enter a conductive state when said monitor potential exceeds a specific level.

2. The insulated gate type semiconductor device of claim 1 wherein said drive gate and said potential detection gate are provided in first and second grooves, respectively, each extending in a thickness direction of said semiconductor substrate.

3. The insulated gate type semiconductor device of claim 2 wherein said semiconductor substrate has a first region of a first conductivity type, and a second region of a second conductivity type, closer to said second current electrode than said first region;

and

said first and second grooves reach said second region through said first region.

4. The insulated gate type semiconductor device of claim 3 further comprising an impurity region of said second conductivity type, apart from said second region in said first region around said first groove.

5. The insulated gate type semiconductor device of claim 4 wherein said second region has a higher impurity concentration in said second current electrode side than in said first current electrode side.

6. The insulated gate type semiconductor device of claim 1 wherein said drive gate and said potential detection gate are opposed, through insulating films, to a major surface of a side of said semiconductor substrate on which said first current electrode is provided.

7. The insulated gate type semiconductor device of claim 6 wherein said semiconductor substrate including:

a first region of a first conductivity type, containing said major surface;

a second region of a second conductivity type selectively formed in said first region exposing to said major surface; and

a third region of said first conductivity type selectively formed in said second region exposing to said major surface, wherein

said drive gate is opposed to said second region sandwiched between said first and third regions on said major surface.

8. The insulated gate type semiconductor device of claim 7 wherein said potential detection gate is opposed to said first region alone.

9. The insulated gate type semiconductor device of claim 1 further comprising:

an insulated gate type transistor having a control electrode to which said potential detection gate is connected, and first and second current electrodes insulated from said control electrode; and

a drive circuit for performing charging/discharging to said drive gate, based on a current that flows to said second current electrode of said insulated gate type transistor, wherein

said first current electrode of said insulated gate type transistor is connected to said first current electrode of said insulated gate type semiconductor device; and

said insulated gate type transistor enters a conductive state when said monitor potential exceeds said specific level.

10. The insulated gate type semiconductor device of claim 9 wherein said drive circuit amplifies and output a current that flows to said second current electrode of said insulated gate type transistor, thereby charging said drive gate.

11. The insulated gate type semiconductor device of claim 10, said drive circuit comprising:

a first potential point for giving a first potential;

a bipolar transistor containing an emitter connected to said first potential point, a collector connected to said drive gate, and a base;

a first resistor connected between said second current electrode of said insulated gate type transistor and said base of said bipolar transistor;

a second resistor connected between said first potential point and said base of said bipolar transistor; and

a second potential point for giving a second potential, connected to said collector of said bipolar transistor.

12. The insulated gate type semiconductor device of claim 11 wherein said drive circuit further includes a third resistor connected between said second potential point and said collector of said bipolar transistor.

13. The insulated gate type semiconductor device of claim 9, said drive circuit including:

a bipolar transistor having an emitter, a collector connected to said drive gate, and a base connected to said second current electrode of said insulated gate type transistor;

a first resistor connected between said emitter and base of said bipolar transistor; and

a second resistor connected between said base of said bipolar transistor and said drive gate of said insulated gate type semiconductor device.

14. The insulated gate type semiconductor device of claim 13, said drive circuit further including a third resistor connected between said base of said bipolar transistor and said second current electrode of said insulated gate type transistor.

15. The insulated gate type semiconductor device of claim 14, said drive circuit further including a fourth resistor connected between said collector of said bipolar transistor and said drive gate.

16. The insulated gate type semiconductor device of claim 15, said drive circuit further including:

a fixed potential point; and

a first diode having a first electrode connected to said emitter of said bipolar transistor, and a second electrode connected to said fixed potential point.

17. The insulated gate type semiconductor device of claim 16, said drive circuit further including a second diode having a first electrode having the same polarity as said first electrode of said first diode, and a second electrode connected to said drive gate.

18. The insulated gate type semiconductor device of claim 17, said drive circuit further including a fifth resistor interposed between said second electrode of said second diode and said drive gate.

19. The insulating gate type semiconductor device of claim 1, wherein said potential detection gate is located between the first and second current electrodes and is insulated from said semiconductor substrate.

20. The insulating gate type semiconductor device of claim 6, wherein said drive gate and said potential detection gate are located between the first and second current electrodes.