Method for fabricating semiconductor thin film

• US 6,071,766 A
• Filed: 07/15/1998
• Issued: 06/06/2000
• Est. Priority Date: 09/29/1994
• Status: Expired

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ohtani, Hisashi, Teramoto, Satoshi, Yamazaki, Shunpei, Miyanaga, Akiharu
• Primary Examiner(s): Elms, Richard
• Assistant Examiner(s): LEBENTRITT, MICHAEL
• Application Number:
  US09/115,838
• Time in Patent Office: 692 Days
• Field of Search: 438/166, 438/402, 438/476, 438/150, 438/151, 438/152
• US Class Current: 438/166
• CPC Class Codes: C03C 17/3482 comprising silicon, hydrogenated silicon or a silicide
• CPC Class Codes: C03C 2218/152 by cvd
• CPC Class Codes: C03C 2218/153 by plasma-enhanced cvd
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/0245 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate

Abstract

An object of the present invention is to provide a technology of reducing a nickel element in the silicon film which is crystallized by using nickel. An extremely small amount of nickel is introduced into an amorphous silicon film which is formed on the glass substrate. Then this amorphous silicon film is crystallized by heating. At this time, the nickel element remains in the crystallized silicon film. Then an amorphous silicon film is formed on the surface of the silicon film crystallized with the action of nickel. Then the amorphous silicon film is further heat treated. By carrying out this heat treatment, the nickel element is dispersed from the crystallized silicon film into the amorphous silicon film with the result that the nickel density in the crystallized silicon film is lowered.

Claims

1. A method for fabricating a semiconductor thin film comprising the steps of:

providing an amorphous semiconductor film with a metal element which promotes crystallization of said semiconductor film;

crystallizing said amorphous semiconductor film by heat treatment to obtain a crystalline semiconductor film;

forming a silicon nitride film in contact with said crystalline semiconductor film;

forming a metal element diffusion film comprising a semiconductor in contact with said silicon nitride film;

diffusing said metal element into said metal element diffusion film; and

removing said metal element diffusion film into which said metal element has been diffused, using said silicon nitride film as an etching stopper.

2. A method for fabricating a semiconductor thin film comprising the steps of:

providing an amorphous silicon film with a metal element which promotes crystallization of said silicon film;

obtaining a crystalline silicon film by crystallizing said amorphous silicon film by heat treatment;

forming a silicon nitride film in contact with said crystalline silicon film;

forming an amorphous semiconductor film in contact with said silicon nitride film;

dispersing by heat treatment the metal element in said crystalline silicon film into the amorphous semiconductor film formed in contact with said silicon nitride film; and

removing the semiconductor film formed in contact with said silicon nitride film by using said silicon nitride film as an etching stopper.

3. The method of claim 2 wherein said amorphous semiconductor film comprises silicon.

4. A method for fabricating a semiconductor thin film comprising the steps of:

providing an amorphous silicon film with a metal element which promotes crystallization of said silicon film;

obtaining a crystalline silicon film by crystallizing said amorphous silicon film by heat treatment;

forming a silicon nitride film in contact with said crystalline silicon film;

forming an amorphous semiconductor film in contact with said silicon nitride film;

crystallizing by heat treatment the amorphous semiconductor film which is formed in contact with said silicon nitride film; and

removing the semiconductor film which is formed in contact with said silicon nitride film by using said silicon nitride film as an etching stopper.

5. The method of claim 4 wherein said amorphous semiconductor film comprises silicon.

6. A method for fabricating a semiconductor thin film comprising the steps of:

providing an amorphous semiconductor film with a metal element which promotes crystallization of said semiconductor film;

crystallizing said amorphous semiconductor film by heat treatment to obtain a crystalline semiconductor film;

forming a silicon nitride film in contact with said semiconductor film;

forming a metal element diffusion film comprising a semiconductor in contact with said silicon nitride film;

diffusing said metal element into said metal element diffusion film; and

removing said metal element diffusion film into which said metal element has been diffused.