Semiconductor memory device and method for fabricating the same
First Claim
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1. A method for fabricating a semiconductor memory device having a capacitor on a semiconductor substrate, the method comprising the steps of:
- forming an insulating film having a contact hole over the semiconductor substrate;
forming a first conductive layer on the semiconductor substrate through the contact hole;
forming a diffusion barrier having a first portion within the contact hole and a second portion extending out from the contact hole and having a width the same as the contact hole, the diffusion barrier being formed on the first conductive layer;
forming a first electrode on the diffusion barrier the first electrode completely covering an exposed portion of the diffusion barrier;
forming a dielectric film on the first electrode and on the insulating film; and
forming a second electrode on the dielectric film.
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Abstract
A semiconductor memory device suitable for forming a capacitor using a high dielectric film for a highly integrated semiconductor device includes a semiconductor substrate, an insulating film having a contact hole, the insulating film being over the semiconductor substrate, a conductive film on the semiconductor substrate through the contact hole, the conductive film having a top portion acting as a diffusion barrier, a first electrode over the conductive films, a dielectric film over the first electrode, and a second electrode over the dielectric film.
22 Citations
17 Claims
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1. A method for fabricating a semiconductor memory device having a capacitor on a semiconductor substrate, the method comprising the steps of:
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forming an insulating film having a contact hole over the semiconductor substrate; forming a first conductive layer on the semiconductor substrate through the contact hole; forming a diffusion barrier having a first portion within the contact hole and a second portion extending out from the contact hole and having a width the same as the contact hole, the diffusion barrier being formed on the first conductive layer; forming a first electrode on the diffusion barrier the first electrode completely covering an exposed portion of the diffusion barrier; forming a dielectric film on the first electrode and on the insulating film; and forming a second electrode on the dielectric film. - View Dependent Claims (2, 3, 4)
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5. A method for fabricating a semiconductor memory device having a capacitor on a semiconductor substrate, the method comprising the steps of:
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forming an insulating film on the semiconductor substrate; patterning the insulating film to form a contact hole therein; forming a first conductive film on the semiconductor substrate through the contact hole; forming a second conductive film directly from a portion of the first conductive film; forming a third conductive film on the second conductive film and on the insulating film; forming a diffusion barrier from a portion of the second conductive film and a portion of the third conductive film, the diffusion barrier having a first portion within the contact hole and a second portion extending out from the contact hole and having a width the same as the contact hole; removing the third conductive film leaving the diffusion barrier; forming a first electrode on the diffusion barrier and on the insulating film, the first electrode completely covering an exposed portion of the diffusion barrier; forming a dielectric film on the first electrode and on the insulating film; and forming a second electrode on the dielectric film. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method for fabricating a semiconductor memory device having a capacitor on a semiconductor substrate, the method comprising the steps of:
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depositing an insulating film on the semiconductor substrate; patterning the insulating film to form a contact hole therein; depositing a polysilicon film on the semiconductor substrate and on the insulating film; removing the polysilicon film on the insulating film; transforming a portion of the polysilicon film to a tungsten film; forming a titanium film on the tungsten film and on the insulating film; annealing the titanium film and the tungsten film to form a titanium tungsten film; removing a portion of the titanium film on the insulating film and on the titanium tungsten film, wherein the titanium tungsten film has a first portion within the contact hole and a second portion extending out from the contact hole and having a width the same as the contact hole; depositing a platinum film on the titanium tungsten film and the insulating film; patterning the platinum film to cover completely an exposed titanium tungsten film; depositing a dielectric film on the platinum film and the insulating film; patterning the dielectric film to cover an exposed platinum layer; depositing a second electrode on the dielectric film and the insulating film; and patterning the second electrode to cover an exposed dielectric film. - View Dependent Claims (16, 17)
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Specification