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Method to prevent the formation of a thinner portion of insulating layer at the junction between the side walls and the bottom insulator

  • US 6,071,794 A
  • Filed: 06/01/1999
  • Issued: 06/06/2000
  • Est. Priority Date: 06/01/1999
  • Status: Expired due to Term
First Claim
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1. A method to prevent the formation of a thinner portion of insulating layer suitable for a semiconductor substrate having a trench comprising the steps of:

  • (a) forming a pad insulating layer on the side walls and the bottom of said trench;

    (b) forming a bottom insulator over said pad insulating layer, said bottom insulator filled within said trench;

    (c) etching the upper portion of said bottom insulator to form a bottom insulator having a concave surface; and

    (d) forming an insulating layer on the side walls of said trench.

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