Separation of thin films from transparent substrates by selective optical processing

• US 6,071,795 A
• Filed: 01/23/1998
• Issued: 06/06/2000
• Est. Priority Date: 01/23/1998
• Status: Expired due to Term

• Current Assignee: Formosa Epitaxy Incorporated (Epistar Corporation)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Wong, William S., Cheung, Nathan W., Sands, Timothy D.
• Primary Examiner(s): MULPURI, SAVITRI
• Application Number:
  US09/012,829
• Time in Patent Office: 865 Days
• Field of Search: 438/977, 438/22, 438/46, 438/33, 438/455, 438/458, 438/459, 438/795, 438/796, 438/798, 438/478, 438/464, 438/479, 438/483, 438/460, 216/62, 216/65
• US Class Current: 438/458
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48145 the bodies being stacked
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate

Abstract

A method of separating a thin film of GaN epitaxially grown on a sapphire substrate. The thin film is bonded to an acceptor substrate, and the sapphire substrate is laser irradiated with a scanned beam at a wavelength at which sapphire is transparent but the GaN is strongly absorbing, e.g., 248 nm. After the laser irradiation, the sample is heated above the melting point of gallium, i.e., above 30° C., and the acceptor substrate and attached GaN thin film are removed from the sapphire growth substrate. If the acceptor substrate is flexible, the GaN thin film can be scribed along cleavage planes of the GaN, and, when the flexible substrate is bent, the GaN film cleaves on those planes. Thereby, GaN lasers and other electronic and opto-electronic devices can be formed.

Claims

1. A method of separating a thin film from a growth substrate, comprising the steps of:

growing a film of a first composition on a first side of a crystallographically oriented first substrate of a second composition, wherein said film comprises a III-V nitride compound and said first substrate comprises sapphire;

bonding said film on a side thereof opposite said first substrate to a second substrate;

irradiating said first substrate from an irradiation side thereof with light of a wavelength that is substantially more strongly absorbed in said film than in the one of said first and second substrates on said irradiation side of said film, wherein said irradiating step forms an interfacial layer between said film and said first substrate; and

after completion of said irradiating step, detaching said second substrate with portions of said film attached thereto from said first substrate, wherein said detaching step severs said interfacial layer.

2. The method of claim 1, wherein said irradiation side is a second side of said first.

3. The method of claim 1, wherein said detaching step liquifies said interfacial layer.

4. The method of claim 1, wherein said detaching step ultrasonically irradiates said first and second substrates so as to dissolve said interfacial layer.

5. The method of claim 1, wherein said detaching step selectively etches away said interfacial layer.

6. The method of claim 1, wherein said irradiating step raster scans a laser beam over an area of said first substrate.

7. The method of claim 1, wherein said irradiating step uses a KrF excimer laser.

8. The method of claim 1, wherein said III-V nitride compound comprises gallium and nitrogen.

9. The method of claim 8, wherein said detaching step includes heating said first and second substrates and said film to a temperature above a melting point of gallium.

10. The method of claim 9, wherein said irradiating step is performed at a temperature below said melting point.

11. The method of claim 1, wherein said III-V nitride compound comprises aluminum and nitrogen.

12. The method of claim 1, wherein said second substrate comprises a wax.

13. The method of claim 1, wherein said second substrate comprises a silicon substrate.

14. The method of claim 1, wherein said second substrate comprises a ceramic.

15. The method of claim 1, wherein said second substrate comprises a perovskite.

16. The method of claim 1, wherein said substrate comprises a flexible substrate.

17. The method of claim 16, further comprising:

etching scribe lines in said thin film along cleavage planes of said thin film; and

bending said flexible substrate in a direction perpendicular to said scribe lines sufficiently to cleave said thin film.

18. The method of claim 17, wherein said thin film comprises gallium and nitrogen.

19. The method of claim 1, wherein said bonding step includes applying a glue layer between said film and said second substrate.

20. The method of claim 1, wherein said bonding step includes applying a metal layer between said film and said second substrate.

21. The method of claim 1, wherein said bonding step includes fusing said film to said second substrate.

22. The method of claim 1, comprising the further step of lifting off said thin film from said second substrate to form a free-standing thin film.

23. The method of claim 1, further comprising epitaxially growing another film on said thin film bonded to said second substrate.

24. A method of separating a thin film from a growth substrate, comprising the steps of:

growing a film of a first composition on a first side of a crystallographically oriented first substrate of a second composition, wherein said film comprises GaN;

bonding said film on a side thereof opposite said first substrate to a second substrate;

irradiating said first substrate from a second side thereof with light of a wavelength that is substantially more strongly absorbed in said film than in said first substrate, said irradiating step producing an interfacial layer between said first substrate and said film and not causing said second substrate to separate from said first substrate; and

after completion of said irradiating step, detaching said second substrate with portions of said film attached thereto from said first substrate.

25. The method of claim 24, wherein said detaching step includes heating said first and second substrates to above a melting point of gallium.