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Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material

  • US 6,071,818 A
  • Filed: 06/30/1998
  • Issued: 06/06/2000
  • Est. Priority Date: 06/30/1998
  • Status: Expired due to Term
First Claim
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1. A method of planarizing a semiconductor wafer having a polishing endpoint layer that includes a catalyst material, comprising the steps of:

  • polishing a first side of said wafer in order to remove material from said wafer, said polishing step includes the step of applying a slurry to said first side of said wafer, said slurry receiving said material removed from said wafer;

    advancing a reagent onto said first side of said wafer and into contact with said slurry after said slurry applying step so as to create an effluent positioned on said first side of said wafer, wherein said reagent catalytically reacts when (i) said catalyst material is present within said slurry, and (ii) said reagent contacts said slurry;

    analyzing said effluent after said reagent advancing step to detect if a catalytic reaction has occurred due to said polishing step removing said catalyst material of said polishing endpoint layer;

    generating a control signal if occurrence of said catalytic reaction is detected in said analyzing step; and

    terminating said polishing step in response to generation of said control signal.

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