III-nitride optoelectronic semiconductor device containing Lattice mismatched III-nitride semiconductor materials

• US 6,072,189 A
• Filed: 07/08/1998
• Issued: 06/06/2000
• Est. Priority Date: 07/10/1997
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Duggan, Geoffrey
• Primary Examiner(s): Tran, Minh Loan
• Application Number:
  US09/111,975
• Time in Patent Office: 699 Days
• Field of Search: 257/13, 257/14, 257/94, 257/96, 257/101, 257/103, 372/43, 372/44, 372/45
• US Class Current: 257/14
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01S 5/3201 incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
• CPC Class Codes: H01S 5/3215 graded composition cladding layers
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP
• CPC Class Codes: H01S 5/3409 special GRINSCH structures
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A light-emitting diode or laser diode comprises a sapphire substrate and, grown on the substrate, a GaN buffer layer, an n-doped GaN contact layer, an n-doped (AlGa)N cladding layer, a Zn-doped (InGa)N active layer, a p-doped (AlGa)N cladding layer and a p-doped GaN contact layer. Graded layers are introduced at the interfaces between the cladding layers and both the contact layers and the active layer. The constituency of each graded layer is graded from one side to the other of the layer such that the layer is lattice matched with the adjacent layer on each side with the result that the strain at the interfaces between the layers is reduced and the possibility of deleterious dislocations being introduced at the interfaces is minimized. By removing or reducing such dislocations, the efficiency of the operation of the device is increased.

Claims

1. A III-nitride optoelectronic semiconductor device, comprising:

a substrate;

a first contact region of a first doping type;

a first cladding region of the first doping type;

an active region formed of a first III-nitride semiconductor material;

a second cladding region of a second doping type opposite to the first doping type;

a second contact region of the second doping type; and

a first graded layer,

wherein the first contact region, the first cladding region, the active region, the second cladding region and the second contact region are sequentially provided on the substrate, at least one of the first and second cladding regions is formed of a second III-nitride semiconductor material which is lattice mismatched with the first III-nitride semiconductor material,

in order to compensate for the lattice mismatching between the active region and at least one of the first and second cladding regions, the first graded layer is interposed between the active region and at least one of the first and second cladding regions, such that one side of the first graded layer is lattice matched with the active region and the other side of the first graded layer is lattice matched with at least one of the first and second cladding regions, and the first graded layer has a constituency which is graded from the one side to the other side of the first graded layer, and

wherein at least one region selected from the first contact region of a first doping type, the first cladding region of the first doping type, the second cladding region of a second doping type opposite to the first doping type, and the second contact region of the second doping type also contains nitrogen.

2. A device according to claim 1, wherein at least one of the first and second cladding regions comprises a III-nitride semiconductor material which is lattice mismatched with a III-nitride semiconductor material of one of the first and second contact regions which is adjacent to at least one of the first and second cladding regions,

the device further comprising a second graded layer interposed between at least one of the first and second cladding regions and one of the first and second contact regions which is adjacent to at least one of the first and second cladding layers, such that one side of the second graded layer is lattice matched with the at least one of the first and second cladding regions which is adjacent to the second graded layer, and the other side of the second graded layer is lattice matched with the one of the first and second contact regions which is adjacent to the second graded layer;

and the second graded layer has a constituency which is graded from the one side to the other side of the second graded layer.

3. A device according to claim 2, wherein at least one of the first and second graded layers has a group III constituency which is graded across at least one of the first and second graded layers.

4. A device according to claim 1, wherein the first graded layer between the active region and at least one of the first and second cladding regions has a first constituent which is graded across the first graded layer in a first direction and a second constituent which is graded across the first graded layer in a second direction opposite to the first direction.

5. A device according to claim 2, wherein the thickness of at least one of the first and second graded layers is in the range of 20 to 400Å

.

6. A device according to claim 1, further comprising two guide regions and a third graded layer, wherein the active region comprises a quantum well or multiquantum well disposed between the guide regions, and the third graded layer is interposed between at least one of the guide regions and the well.

7. A device according to claim 1, wherein the first and second contact regions, the first and second cladding regions and the active region incorporate gallium as a constituent.

8. A device according to claim 1, wherein the active region incorporates indium.

9. A device according to claim 1, wherein the first and second cladding regions incorporate aluminum.

10. A III-nitride optoelectronic semiconductor device, comprising:

a substrate;

a first contact region of a first doping type;

a first cladding region of the first doping type;

an active region formed of a first III-nitride semiconductor material;

a second cladding region of a second doping type opposite to the first doping type;

a second contact region of the second doping type; and

a first graded layer,

wherein the first contact region, the first cladding region, the active region, the second cladding region and the second contact region are sequentially provided on the substrate,

at least one of the first and second cladding regions is formed of a second III-nitride semiconductor material which is lattice mismatched with the first III-nitride semiconductor material,

in order to compensate for the lattice mismatching between the active region and at least one of the first and second cladding regions, the first graded layer is interposed between the active region and at least one of the first and second cladding regions, such that one side of the first graded layer is lattice matched with the active region and the other side of the first graded layer is lattice matched with at least one of the first and second cladding regions, and the first graded layer has a constituency which is graded from the one side to the other side of the first graded layer, and

wherein the first graded layer between the active region and at least one of the first and second cladding regions has a first constituent which is graded across the first graded layer in a first direction and a second constituent which is graded across the first graded layer in a second direction opposite to the first direction.

11. A device according to claim 10, wherein at least one of the first and second cladding regions comprises a III-nitride semiconductor material which is lattice mismatched with a III-nitride semiconductor material of one of the first and second contact regions which is adjacent to at least one of the first and second cladding regions, the device further comprising a second graded layer interposed between at least one of the first and second cladding regions and one of the first and second contact regions which is adjacent to at least one of the first and second cladding layers, such that one side of the second graded layer is lattice matched with the at least one of the first and second cladding regions which is adjacent to the second graded layer, and the other side of the second graded layer is lattice matched with the one of the first and second contact regions which is adjacent to the second graded layer;

and the second graded layer has a constituency which is graded from the one side to the other side of the second graded layer.

12. A device according to claim 11, wherein at least one of the first and second graded layers has a group III constituency which is graded across at least one of the first and second graded layers.

13. A device according to claim 11, wherein the thickness of at least one of the first and second graded layers is in the range of 20 to 400 Å

.

14. A device according to claim 10, further comprising two guide regions and a third graded layer, wherein the active region comprises a quantum well or multiquantum well disposed between the guide regions, and the third graded layer is interposed between at least one of the guide regions and the well.

15. A device according to claim 10, wherein the first and second contact regions, the first and second cladding regions and the active region incorporate gallium as a constituent.

16. A device according to claim 10, wherein the active region incorporates indium.

17. A device according to claim 10, wherein the first and second cladding regions incorporate aluminum.