Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy
First Claim
1. A semiconductor light emitting device comprising:
- a second semiconductor layer formed directly on a principal plane of a crystal substrate via a first semiconductor layer;
an active layer formed on said second semiconductor layer and having an energy band gap which is smaller than an energy band gap of said second semiconductor layer, said active layer is made of semiconductor having uniaxial anisotropy;
a third semiconductor layer formed on said active layer and having an energy band gap which is larger than an energy band gap of said active layer; and
,a pair of electrodes for supplying current to said second semiconductor layer, said active layer, and said third semiconductor layer in a film thickness direction,wherein said film thickness direction of at least said active layer is different from an axis of said uniaxial anisotropy, said active layer has triaxis anisotropy by applying distortion in a plane which is not perpendicular to a c axis exhibiting anisotropy, and light is emitted vertically relative to said principal plane.
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Accused Products
Abstract
A semiconductor light emitting device includes a second semiconductor layer, an active layer, a third semiconductor layer and a pair of electrodes. The second semiconductor layer is formed directly on the principal pane of a substrate or via a first semiconductor layer. The active layer is formed on the second semiconductor layer and has an energy band gap which is smaller than the energy band gap of the second semiconductor layer. The active layer is made of a semiconductor having an uniaxial anisotropy. The third semiconductor layer is formed on the active layer and has the energy band gap which is larger than the energy band gap of the active layer. The pair of electrodes supplies current to the second semiconductor layer, the active layer, and the third semiconductor layer in the film thickness direction. The film thickness direction of at least the active layer is different from the axis of the uniaxial anisotropy.
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Citations
41 Claims
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1. A semiconductor light emitting device comprising:
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a second semiconductor layer formed directly on a principal plane of a crystal substrate via a first semiconductor layer; an active layer formed on said second semiconductor layer and having an energy band gap which is smaller than an energy band gap of said second semiconductor layer, said active layer is made of semiconductor having uniaxial anisotropy; a third semiconductor layer formed on said active layer and having an energy band gap which is larger than an energy band gap of said active layer; and
,a pair of electrodes for supplying current to said second semiconductor layer, said active layer, and said third semiconductor layer in a film thickness direction, wherein said film thickness direction of at least said active layer is different from an axis of said uniaxial anisotropy, said active layer has triaxis anisotropy by applying distortion in a plane which is not perpendicular to a c axis exhibiting anisotropy, and light is emitted vertically relative to said principal plane. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor light emitting device comprising:
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a first barrier layer formed of a first conductive type AlGaN which is deposited on an SiC substrate using a {1120} plane as a principal plane; an active layer formed of a multiple quantum well layer including an InGaN layer, a multiple quantum well layer including an AlGaN layer, a GaN single layer, and an InGaN single layer, which is deposited on said first barrier layer, said active layer having a c axis exhibiting anisotropy along its face of a light emitted surface; a second barrier layer formed of a second conductive type AlGaN which is deposited on said active layer; an optical resonator formed in a film thickness direction, said optical resonator being formed by using a reflection mirror which is made of a multi-layered film provided on said second barrier layer as a first reflection surface and having a second reflection surface beneath said first barrier layer; and a first electrode and a second electrode.
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11. A light emitting diode comprising:
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a second semiconductor layer formed on a principal plane of a wurtzite compound semiconductor crystal substrate via a first semiconductor layer; an active layer formed on said second semiconductor layer and having an energy band gap which is smaller than an energy band gap of said second semiconductor layer, said active layer is made of a semiconductor having uniaxial anisotropy; a third semiconductor layer formed on said active layer and having an energy band gap which is larger than an energy band gap of said active layer; a pair of electrodes for supplying current to said second semiconductor, said active layer, and said third semiconductor layer in a film thickness direction; and said film thickness direction of at least said active layer is different from an axis of said uniaxial anisotropy; wherein a c axis of a wurtzite compound semiconductor crystal intersects substantially orthogonally with a light emission direction vertical to the substrate surface. - View Dependent Claims (12, 13)
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14. A display device comprising:
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a first group of light emitting diodes each formed of a wurtzite compound semiconductor crystal in which a light emission direction intersects substantially orthogonally with a c axis, said first group of light emitting diodes emitting light with a first polarization direction; and a second group of light emitting diodes each formed of a wurtzite compound semiconductor crystal in which a light emission direction intersects substantially orthogonally with a c axis, said second group of light emitting diodes emitting light with a second polarization direction perpendicular to said first polarization direction.
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15. A semiconductor light emitting device comprising:
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a second semiconductor layer formed directly on a principal plane of a crystal substrate; an active layer formed on said second semiconductor layer and having an energy band gap which is smaller than an energy band gap of said second semiconductor layer, and active layer is made of semiconductor having uniaxial anisotropy; a third semiconductor layer formed on said active layer and having an energy band gap which is larger than an energy band gap of said active layer; and a pair of electrodes for supplying current to said second semiconductor layer, said active layer, and said third semiconductor layer in a film thickness direction; wherein said film thickness direction of at least said active layer is different from an axis of said uniaxial anisotropy, said active layer has triaxis anisotropy by applying distortion in a plane which is not perpendicular to a c axis exhibiting anisotropy, and light is emitted vertically relative to said principal plane. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23)
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24. A semiconductor light emitting device comprising:
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a second semiconductor layer formed directly on a principal plane of a crystal substrate via a first semiconductor layer; an active layer formed on said second semiconductor layer and having an energy band gap which is smaller than an energy band gap of said second semiconductor layer, said active layer is made of semiconductor having uniaxial anisotropy; a third semiconductor layer formed on said active layer and having an energy band gap which is larger than an energy band gap of said active layer; and
,a pair of electrodes for supplying current to said second semiconductor layer, said active layer, and said third semiconductor layer in a film thickness direction, wherein said film thickness direction of at least said active layer is different from an axis of said uniaxial anisotropy, said active layer has triaxis anisotropy by applying distortion in a plane which is not perpendicular to a c axis exhibiting anisotropy. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32)
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33. A semiconductor light emitting device comprising:
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a second semiconductor layer formed directly on a principal plane of a crystal substrate; an active layer formed on said second semiconductor layer and having an energy band gap which is smaller than an energy band gap of said second semiconductor layer, said active layer is made of semiconductor having uniaxial anisotropy; a third semiconductor layer formed on said active layer and having an energy band gap which is larger than an energy band gap of said active layer; and a pair of electrodes for supplying current to said second semiconductor layer, said active layer, and said third semiconductor layer in a film thickness direction; wherein said film thickness direction of at least said active layer is different from an axis of said uniaxial anisotropy, said active layer has triaxis anisotropy by applying distortion in a plane which is not perpendicular to a c axis exhibiting anisotropy. - View Dependent Claims (34, 35, 36, 37, 38, 39, 40, 41)
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Specification