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Semiconductor device having self-aligned contact plug and metallized gate electrode

  • US 6,072,221 A
  • Filed: 06/26/1998
  • Issued: 06/06/2000
  • Est. Priority Date: 06/30/1997
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a gate electrode formed above a semiconductor substrate via a gate insulation film, the gate electrode containing a semiconductor layer and a metal layer formed on the semiconductor layer, the metal layer constituting an upper portion of said gate electrode, the semiconductor layer constituting a lower portion of said gate electrode;

    a side wall insulation film for surrounding a side wall of the gate electrode;

    an interlayer insulation film formed a predetermined distance away from the side wall insulation film;

    a diffusion layer formed on a surface portion of the substrate and both sides of the gate electrode; and

    a contact plug formed on the diffusion layer and between the side wall insulation film and the interlayer insulation film, the contact plug leveled to substantially a same height as the gate electrode and higher than the semiconductor layer, the contact plug including a metal layer, the metal layer of the contact plug formed thicker than the metal layer of the gate electrode.

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