Semiconductor device having self-aligned contact plug and metallized gate electrode
First Claim
1. A semiconductor device comprising:
- a gate electrode formed above a semiconductor substrate via a gate insulation film, the gate electrode containing a semiconductor layer and a metal layer formed on the semiconductor layer, the metal layer constituting an upper portion of said gate electrode, the semiconductor layer constituting a lower portion of said gate electrode;
a side wall insulation film for surrounding a side wall of the gate electrode;
an interlayer insulation film formed a predetermined distance away from the side wall insulation film;
a diffusion layer formed on a surface portion of the substrate and both sides of the gate electrode; and
a contact plug formed on the diffusion layer and between the side wall insulation film and the interlayer insulation film, the contact plug leveled to substantially a same height as the gate electrode and higher than the semiconductor layer, the contact plug including a metal layer, the metal layer of the contact plug formed thicker than the metal layer of the gate electrode.
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Accused Products
Abstract
In the method of manufacturing a semiconductor device, according to the present invention, first, a dummy gate electrode consisting of a semiconductor layer and a non-metal cap layer formed on the semiconductor layer, is formed above a substrate. Then, diffusion layers are formed respectively on both sides of the dummy gate electrode. The dummy gate is used as a mask here, and thus the diffusion layers are self-aligned respectively with both sides of the dummy gate electrode. The formation of these diffusion layers requires a high-temperature heat treatment, however since the cap layer is made of a non-metal material, it is not melted down even in the high-temperature heat treatment. Next, the cap layer formed on the semiconductor layer is removed, and a gate groove made by the removal is filled with metal. Thus, a metal gate electrode made of a semiconductor layer and a metal layer is completed. As described above, in the present invention, first, a dummy gate electrode is formed of a non-metal cap layer, and the cap layer is removed after the formation of the diffusion layers, followed by filling the created gate groove with a metal. In this manner, the self-alignment of the diffusion layers and the metallization of the gate electrode can be achieved at the same time.
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Citations
12 Claims
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1. A semiconductor device comprising:
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a gate electrode formed above a semiconductor substrate via a gate insulation film, the gate electrode containing a semiconductor layer and a metal layer formed on the semiconductor layer, the metal layer constituting an upper portion of said gate electrode, the semiconductor layer constituting a lower portion of said gate electrode; a side wall insulation film for surrounding a side wall of the gate electrode; an interlayer insulation film formed a predetermined distance away from the side wall insulation film; a diffusion layer formed on a surface portion of the substrate and both sides of the gate electrode; and a contact plug formed on the diffusion layer and between the side wall insulation film and the interlayer insulation film, the contact plug leveled to substantially a same height as the gate electrode and higher than the semiconductor layer, the contact plug including a metal layer, the metal layer of the contact plug formed thicker than the metal layer of the gate electrode. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a gate electrode formed above a semiconductor substrate via a gate insulation film, the sate electrode containing a semiconductor layer and a metal layer formed on the semiconductor layer, the metal layer constituting an upper portion of said gate electrode, the semiconductor layer constituting a lower portion of said gate electrode; a side wall insulation film for surrounding a side wall of the gate electrode; an interlayer insulation film formed a predetermined distance away from the side wall insulation film; a diffusion layer formed on a surface portion of the substrate and both sides of the gate electrode; a contact plug formed on the diffusion layer and between the side wall insulation film and the interlayer insulation film, the contact plug leveled to substantially a same height as the gate electrode; and a contact which contacts a part of an upper surface of the contact plug and a part of a lateral surface of the contact plug. - View Dependent Claims (8, 9, 10)
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11. A semiconductor device comprising:
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a gate electrode formed above a semiconductor substrate via a gate insulation film, the gate electrode containing a semiconductor layer and a metal layer formed on the semiconductor layer, the metal layer constituting an upper portion of said gate electrode, the semiconductor layer constituting a lower portion of said gate electrode; a side wall insulation film for surrounding a side wall of the gate electrode; an interlayer insulation film formed a predetermined distance away from the side wall insulation film; a diffusion layer formed on a surface portion of the substrate and both sides of the gate electrode; and a contact plug formed on the diffusion layer and between the side wall insulation film and the interlayer insulation film, the contact plug leveled to substantially a same height as the gate electrode and higher than semiconductor layer, the contact plug including a metal layer, the metal layer of the contact plug formed thicker than the metal layer of the gate electrode; and a contact which contacts a part of an upper surface of the contact plug and a part of a lateral surface of the contact plug. - View Dependent Claims (12)
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Specification