Memory structures and methods of making same
First Claim
1. A memory device including at least one element comprising:
- a. a pair of opposed electrodes; and
b. intervening therebetween, a memory material comprising a polymer matrix having dispersed therein a particulate conductive or semiconductive material whereby application of a potential difference across the memory material causes it to hysteretically assume one of two detectable states.
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Accused Products
Abstract
Electrically erasable and rewritable memory structures with reversible states and good retention times may be constructed on flexible substrates using simple room-temperature deposition (e.g., printing) processes and curing temperatures below 110° C. The memory structures are based on a polymer matrix having dispersed therein a particulate conductive or semiconductive material. When electrodes of suitable composition and geometry are used to apply electrical pulses of opposite polarity to the matrix material, reversible memory switching behavior is observed. In particular, subjection to positive or negative voltage pulses causes the devices to make fully-reversible transitions between low-resistance and high-resistance states.
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Citations
27 Claims
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1. A memory device including at least one element comprising:
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a. a pair of opposed electrodes; and b. intervening therebetween, a memory material comprising a polymer matrix having dispersed therein a particulate conductive or semiconductive material whereby application of a potential difference across the memory material causes it to hysteretically assume one of two detectable states. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification