Semiconductor light-emitting device and method of fabricating the same

• US 6,072,819 A
• Filed: 05/21/1997
• Issued: 06/06/2000
• Est. Priority Date: 05/23/1996
• Status: Expired due to Fees

• Current Assignee: ROHM Co., Ltd.
• Original Assignee: ROHM Co., Ltd.
• Inventors: Shakuda, Yukio
• Primary Examiner(s): Davie, James W.
• Application Number:
  US08/859,707
• Time in Patent Office: 1,112 Days
• Field of Search: 372/45, 372/46, 257/94, 437/129
• US Class Current: 372/46.01
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01S 5/2202 by making a groove in the upper laser structure
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

A structure consisting of a substrate and a gallium nitride based compound semiconductor formed on the substrate includes a light-emitting layer forming portion consisting at least of a semiconductor layer of a first conductivity type (an n-type cladding layer) and a semiconductor layer of a second conductivity type (a p-type cladding layer); a current blocking layer of the first conductivity type, which is formed within a semiconductor layer of the second conductivity type and in close proximity to the light-emitting layer forming portion, and a portion of which is removed in a region where a current flow, and electrodes connected to the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, respectively. In a semiconductor light-emitting device using GaN based compound semiconductors, this structure allows the current blocking layer for defining a current injection region to be formed in close proximity to the light-emitting layer, thus reducing leakage current into regions outside a pattern.

Claims

1. A semiconductor light-emitting device comprising:

a substrate;

a light-emitting layer forming portion consisting at least of a semiconductor layer of a first conductivity type, an active layer and a semiconductor layer of a second conductivity type comprising a gallium nitride based compound semiconductor respectively formed on said substrate;

a current blocking layer comprising GaN of the first conductivity type, which is formed within said semiconductor layer of the second conductivity type and in close proximity to said active layer, and a portion of which is removed by thermal etching in a region where a current flows;

an etching stop layer comprising a gallium nitride based compound semiconductor containing Al, having a smaller thermal etching rate than that of said current blocking layer, said etching stop layer formed underneath said current blocking layer;

a protective layer comprising a gallium nitride based compound semiconductor containing Al, having a smaller thermal etching rate than that of said current blocking layer, said protective layer is provided on said current blocking layer; and

electrodes connected to said semiconductor layers of the first and second conductivity types, respectively.

2. A semiconductor laser comprising:

a substrate;

layers epitaxially grown one above another on top of said substrate, said layers comprising a cladding layer of a first conductivity type formed from in_x Al_y Ga_1-x-y- N (0≦

x≦

1, 0≦

y≦

1,0≦

x+y≦

1), an active layer formed from in_z Ga_1-z N (0≦

z≦

1), a cladding layer of a second conductivity type formed from In_x Al_y Ga_1-x-y- N;

an etching stop layer formed from Al_a Ga_1-a N (0.02≦

a≦

1) which has a smaller thermal etching rate than GaN;

a current blocking layer of the first conductivity type formed from GaN and in which a stripe groove is formed by thermal etching;

a protective layer formed from Al_a Ga_1-a N which has a smaller thermal etching rate than GaN and in which a similar stripe groove such as said stripe groove is formed;

a light confinement layer of the second conductivity type formed from a gallium nitride based compound semiconductor; and

electrodes electrically connected to said semiconductor layers of the first and second conductivity types, respectively.

3. A semiconductor light-emitting diode comprising:

a substrate;

a light-emitting layer forming portion formed from a gallium nitride based compound semiconductor deposited upon said substrate;

an etching stop layer formed on said light-emitting layer forming portion;

a current blocking layer formed on said etching stop layer and around a periphery of said light-emitting layer forming portion and formed from GaN of a conductivity type different from the conductivity type of an uppermost layer of said light-emitting layer forming portion;

a current diffusing layer formed above the light-emitting layer forming portion exposed through a removed center portion of said current blocking layer, as well as on top of said current blocking layer remaining in areas surrounding said removed center portion; and

electrodes electrically connected to a semiconductor layer of a first conductivity type and a semiconductor layer of a second conductivity type, respectively, in said light-emitting layer forming portion,

wherein said etching stop layer is formed from a gallium nitride based compound semiconductor material containing Al, having a smaller thermal etching rate than that of said current blocking layer.

4. A semiconductor light-emitting device according to claim 3, wherein said current blocking layer is also formed in a portion directly below the electrode formed on an upper surface side of a semiconductor layer structure on which said light-emitting layer forming portion and said current diffusing layer are formed one on top of the other.