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Semiconductor light-emitting device and method of fabricating the same

  • US 6,072,819 A
  • Filed: 05/21/1997
  • Issued: 06/06/2000
  • Est. Priority Date: 05/23/1996
  • Status: Expired due to Fees
First Claim
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1. A semiconductor light-emitting device comprising:

  • a substrate;

    a light-emitting layer forming portion consisting at least of a semiconductor layer of a first conductivity type, an active layer and a semiconductor layer of a second conductivity type comprising a gallium nitride based compound semiconductor respectively formed on said substrate;

    a current blocking layer comprising GaN of the first conductivity type, which is formed within said semiconductor layer of the second conductivity type and in close proximity to said active layer, and a portion of which is removed by thermal etching in a region where a current flows;

    an etching stop layer comprising a gallium nitride based compound semiconductor containing Al, having a smaller thermal etching rate than that of said current blocking layer, said etching stop layer formed underneath said current blocking layer;

    a protective layer comprising a gallium nitride based compound semiconductor containing Al, having a smaller thermal etching rate than that of said current blocking layer, said protective layer is provided on said current blocking layer; and

    electrodes connected to said semiconductor layers of the first and second conductivity types, respectively.

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