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High selectivity etch using an external plasma discharge

  • US 6,074,514 A
  • Filed: 02/09/1998
  • Issued: 06/13/2000
  • Est. Priority Date: 02/09/1998
  • Status: Expired due to Fees
First Claim
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1. A plasma reactor, comprising:

  • a primary processing chamber having a workpiece supporter for holding a workpiece inside and a gas distribution apparatus capable of introducing a processing gas, which includes an etchant gas, into the primary processing chamber; and

    a scavenging chamber connected at an inlet thereof to an etchant gas source and connected at an outlet thereof to the gas distribution device of the primary processing chamber, said scavenging chamber comprising,a radiation applicator capable of irradiating the interior of the scavenging chamber and creating a plasma from etchant gas flowing through the scavenging chamber from the etchant gas source to the gas distribution apparatus of the primary processing chamber,an etchant species scavenging source disposed within the scavenging chamber and capable of interacting with the plasma to scavenge etchant species created by the dissociation of the etchant gas in the plasma and forming etch by-products comprised of substances from both the etchant species and the scavenging source.

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