High sputter, etch resistant window for plasma processing chambers

• US 6,074,516 A
• Filed: 06/23/1998
• Issued: 06/13/2000
• Est. Priority Date: 06/23/1998
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Howald, Arthur M., Schoepp, Alan M., Chen, Anthony L.
• Primary Examiner(s): Bueker, Richard
• Assistant Examiner(s): FIELER, ERIN L
• Application Number:
  US09/103,357
• Time in Patent Office: 721 Days
• Field of Search: 156/345, 118/723 I, 118/118 E, 118/723 R, 118/715
• US Class Current: 156/345.24
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32467 Material
• CPC Class Codes: H01J 37/32477 characterised by the means for protecting vessels or internal parts, e.g. coatings

Abstract

A window of a plasma processing chamber. The window includes a first dielectric portion having a first electrical thickness and a first resistivity to an etching plasma that is formed within the plasma processing chamber. There is further included a second dielectric portion disposed within the first dielectric portion. The second dielectric portion has a second electrical thickness that is less than the first electrical thickness. The second dielectric portion is formed of a substantially transparent material and has a second resistivity to the etching plasma. The second resistivity is higher than the first resistivity.

Claims

1. A window of a plasma processing chamber, comprising:

a first dielectric portion having a first electrical thickness and a first resistivity to an etching plasma that is formed within said plasma processing chamber;

a second dielectric portion disposed within said first dielectric portion and forming a window portion, said window portion having a second electrical thickness that is less than said first electrical thickness, said second dielectric portion being formed of a substantially transparent material and having a second resistivity to said etching plasma, said second resistivity being higher than said first resistivity.

2. The window of claim 1 wherein said second dielectric portion is formed of a material that has a higher dielectric constant than a material of said first dielectric portion.

3. The window of claim 1 wherein said second dielectric portion has at least one surface exposed to said etching plasma.

4. The window of claim 1 wherein said etching plasma represents a high density plasma.

5. The window of claim 1 wherein said first dielectric portion is formed of fused silica and said second dielectric portion is formed of sapphire.

6. The window of claim 5 wherein said second dielectric portion is also physically thinner than said first dielectric portion.

7. The window of claim 1 wherein said window is also employed as a dielectric window through which said etching plasma is inductively coupled to an electrode.

8. A window of a plasma processing chamber, comprising:

a first dielectric portion having a first electrical thickness and a first resistivity to an etching plasma that is formed within said plasma processing chamber;

a second dielectric portion disposed within said first dielectric portion, said second dielectric portion having a second electrical thickness that is less than said first electrical thickness, said second dielectric portion being formed of a substantially transparent material and having a second resistivity to said etching plasma said second resistivity being higher than said first resistivity;

wherein said window is also employed as a dielectric window through which said etching plasma is inductively coupled to an electrode and said second dielectric portion is offset from a center of said window.

9. A plasma processing chamber configured for processing substrates, comprising:

a first electrode disposed outside said plasma processing chamber;

a substrate holder disposed within said plasma processing chamber;

a dielectric window disposed between said first electrode and said substrate holder;

an observation window disposed on a surface of said plasma processing chamber, said observation window being substantially transparent to at least one of an illuminating beam and a reflected beam of an illumination source;

a second electrode disposed outside said plasma processing chamber and proximate said observation window, said second electrode, when powered, is configured to facilitate bombardment of an interior surface of said observation window to reduce byproduct deposition on said interior surface of said observation window.

10. The plasma processing chamber of claim 9 wherein said observation window is formed of a material that is more resistant to an etching plasma in said plasma processing chamber than a material of said dielectric window.

11. The plasma processing chamber of claim 10 wherein said observation window is formed of sapphire.

12. The plasma processing chamber of claim 9 wherein said first electrode is configured to inductively couple to a plasma formed within said plasma processing chamber.

13. The plasma processing chamber of claim 9 wherein said first electrode is configured to form a high density plasma within said plasma processing chamber.

14. A plasma processing chamber configured for processing substrates, comprising:

a first electrode disposed outside said plasma processing chamber;

a substrate holder disposed within said plasma processing chamber;

a dielectric window formed of a first material and disposed between said first electrode and said substrate holder;

an observation window formed of a second material and disposed in a void formed in said dielectric window, said observation window being substantially transparent to at least one of an illuminating beam and a reflected beam of an interferometry illumination source, said second material having a higher dielectric constant than said first material.

15. The plasma processing chamber of claim 14 wherein said second material is more resistant to an etching plasma in said plasma processing chamber than said first material.

16. The plasma processing chamber of claim 15 wherein said second material is sapphire.

17. The plasma processing chamber of claim 14 wherein said first electrode is configured to inductively couple to a plasma formed within said plasma processing chamber.

18. The plasma processing chamber of claim 14 wherein said first electrode is configured to form a high density plasma within said plasma processing chamber.