Method of making mask pattern utilizing auxiliary pattern forbidden region
First Claim
1. A method of making a mask pattern including an original pattern to be printed on a wafer substrate and an auxiliary pattern for improving printing accuracy of the original pattern, including the steps of:
- forming the original pattern to be printed on the wafer substrate, said original pattern having a minimum width (w);
providing a first specific width (f) that has a span close to said minimum width (w) on the entire periphery of the original pattern and enlarging the original pattern so as to form an enlarged original pattern region and establishing the enlarged original pattern region as an auxiliary pattern forbidden region wherein formation of the auxiliary pattern is forbidden;
providing a second specific width (b) on the entire periphery of the auxiliary pattern forbidden region and thereby enlarging the auxiliary pattern forbidden region so as to form an enlarged forbidden region and establishing the enlarged forbidden region from which the auxiliary pattern forbidden region is excluded as an auxiliary pattern formation region for forming the auxiliary pattern; and
reducing the auxiliary pattern formation region to a third specific width (a) within which the auxiliary pattern is formed,wherein an interval (d) between the auxiliary pattern and the original pattern is represented by;
d={f+(b-a)/2}.
1 Assignment
0 Petitions
Accused Products
Abstract
A mask pattern including an auxiliary pattern for improving printing accuracy is easily formed. A process of making the auxiliary pattern includes the steps of: providing an auxiliary pattern forbidden region around an original pattern based on the original pattern formed by an original pattern generating means (step S1); providing an auxiliary pattern formation region around the auxiliary pattern forbidden region based on the auxiliary pattern forbidden region provided in step S1 (step S2); and forming an auxiliary pattern of specific width based on the auxiliary pattern formation region provided in step S2 (step S3). Such formation of the auxiliary pattern prevents neighboring two traces of auxiliary pattern from touching or overlapping each other, for example. An auxiliary pattern is easily formed even if an original pattern is a complicated one without repeatability.
-
Citations
9 Claims
-
1. A method of making a mask pattern including an original pattern to be printed on a wafer substrate and an auxiliary pattern for improving printing accuracy of the original pattern, including the steps of:
-
forming the original pattern to be printed on the wafer substrate, said original pattern having a minimum width (w); providing a first specific width (f) that has a span close to said minimum width (w) on the entire periphery of the original pattern and enlarging the original pattern so as to form an enlarged original pattern region and establishing the enlarged original pattern region as an auxiliary pattern forbidden region wherein formation of the auxiliary pattern is forbidden; providing a second specific width (b) on the entire periphery of the auxiliary pattern forbidden region and thereby enlarging the auxiliary pattern forbidden region so as to form an enlarged forbidden region and establishing the enlarged forbidden region from which the auxiliary pattern forbidden region is excluded as an auxiliary pattern formation region for forming the auxiliary pattern; and reducing the auxiliary pattern formation region to a third specific width (a) within which the auxiliary pattern is formed, wherein an interval (d) between the auxiliary pattern and the original pattern is represented by;
d={f+(b-a)/2}. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
Specification
-
- Resources
-
Current AssigneeSony Corporation (Sony Group Corp.)
-
Original AssigneeSony Corporation (Sony Group Corp.)
-
InventorsTakeuchi, Koichi
-
Primary Examiner(s)Young, Christopher G.
-
Assistant Examiner(s)Mohamedulla, Saleha R.
-
Application NumberUS09/095,926Time in Patent Office732 DaysField of Search439/5, 439/296US Class Current430/5CPC Class CodesG03F 1/36 Masks having proximity corr...
