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Method of processing semiconductor material wafers and method of forming flip chips and semiconductor chips

  • US 6,074,896 A
  • Filed: 01/22/1999
  • Issued: 06/13/2000
  • Est. Priority Date: 08/20/1997
  • Status: Expired due to Term
First Claim
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1. A method of processing a semiconductor wafer comprising:

  • providing a semiconductor wafer having a thickness which is defined between a pair of outwardly-facing surfaces;

    first removing material of the semiconductor wafer sufficient to define an intermediate wafer surface within the wafer;

    forming an insulative material over the intermediate wafer surface to a thickness of greater than 100 Angstrom; and

    second removing material of both the insulative material and the semiconductor wafer sufficiently through the entire thickness of the semiconductor wafer.

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