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Method for forming electrical isolation for semiconductor devices

  • US 6,074,903 A
  • Filed: 06/16/1998
  • Issued: 06/13/2000
  • Est. Priority Date: 06/16/1998
  • Status: Expired due to Term
First Claim
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1. A method for forming electrically isolated semiconductor devices in a silicon body, comprising:

  • forming a trench in a selected region of the body;

    depositing a barrier material over sidewalls of the trench;

    removing portions of the barrier material from a first sidewall portion of the trench to expose such first sidewall portion of the trench while leaving portions of such barrier material on a second sidewall portion of the trench to form a barrier layer thereon;

    depositing a dielectric material in the trench, a portion of dielectric material being deposited on the exposed first sidewall portion of the trench and another portion of such deposited dielectric material being deposited on the barrier material;

    annealing the dielectric material in an oxidizing environment to densify such deposited dielectric material, the barrier layer inhibiting oxidation of the said second sidewall portion of the trench; and

    forming a plurality of the semiconductor devices in the silicon body with such devices being electrically isolated by the dielectric material in the trench.

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