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Apparatus and method for forming controlled deep trench top isolation layers

  • US 6,074,909 A
  • Filed: 07/31/1998
  • Issued: 06/13/2000
  • Est. Priority Date: 07/31/1998
  • Status: Expired due to Term
First Claim
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1. A method for controlling isolation layer thickness in trenches for semiconductor memories comprising the steps of:

  • providing a deep trench having a storage node formed therein, the storage node having a buried strap;

    depositing an isolation layer on the buried strap for providing electrical isolation for the storage node;

    forming a masking layer on the isolation layer to mask a portion of the isolation layer in contact with the buried strap; and

    removing the isolation layer other than the portion masked by the mask layer.

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