×

Vapor phase etching of oxide masked by resist or masking material

  • US 6,074,951 A
  • Filed: 05/29/1997
  • Issued: 06/13/2000
  • Est. Priority Date: 05/29/1997
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of patterning oxide for an integrated circuit, comprising the steps of:

  • depositing an organic photoresist on an oxide layer to be patterned, the oxide layer being positioned on a substrate;

    photolithographically patterning an opening in the organic photoresist to form first and second edges which define an exposed portion of the oxide layer;

    etching the exposed portion of the oxide layer with neutral molecules from a gaseous hydrogen fluoride/ammonia mixture while simultaneously preserving the organic photoresist such that the organic photoresist at the opening remains in substantial contact with the oxide layer subsequent to said etching;

    producing a reaction product from said etching step, the reaction product being a solid that occupies more volume than the etched oxide, wherein the organic photoresist forces the reaction product from under the edges of the organic photoresist into the exposed portion of the oxide layer, thereby slowing the etching near the edge; and

    removing the reaction product formed in said etching step.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×