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Semiconductor device inhibiting parasitic effects during electrostatic discharge

  • US 6,075,271 A
  • Filed: 03/03/1998
  • Issued: 06/13/2000
  • Est. Priority Date: 03/03/1998
  • Status: Expired due to Term
First Claim
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1. A semiconductor device having a buffer, wherein said buffer comprises:

  • a substrate having a first conductivity type, wherein;

    said substrate includes a first portion overlying a second portion;

    said first and second portions have said first conductivity type; and

    said first portion has a lower doping concentration compared to said second portion;

    a top substrate region having said first conductivity type;

    a first transistor having a first current carrying electrode and a first control electrode;

    a second transistor having a second current carrying electrode and a second control electrode;

    at least one deep doped region lying between said first and second control electrodes,wherein said at least one deep doped region;

    is another current carrying electrode for said first transistor and another current carrying electrode for said second transistor; and

    has a second conductivity type that is opposite said first conductivity type; and

    a deeper doped region having said second conductivity type, wherein said deeper doped region;

    lies between said first and second control electrodes;

    is deeper than said at least one deep doped region; and

    said deeper doped region extends at least to said second portion;

    said first and second portions have said first conductivity type; and

    said first portion has a lower doping concentration compared to said second portion.

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