Apparatus for optimization of microwave processing of industrial materials and other products

• US 6,075,422 A
• Filed: 06/01/1998
• Issued: 06/13/2000
• Est. Priority Date: 06/01/1998
• Status: Expired due to Term

• Current Assignee: RF Technologies, Inc. (Microwave Techniques LLC)
• Original Assignee: RF Technologies, Inc. (Microwave Techniques LLC)
• Inventors: Harris, George M.
• Primary Examiner(s): GENSLER, PAUL L
• Application Number:
  US09/087,875
• Time in Patent Office: 743 Days
• Field of Search: 333/17.3, 333/33, 333/208, 333/209, 333/253
• US Class Current: 333/17.3
• CPC Class Codes: H01P 5/04 with variable factor of coupling

Abstract

A high power microwave or radio frequency network is disclosed which utilizes [2] two movable capacitive probes in order to provide complete vector tuning [in 4 axis by] utilizing the capacitive reactance of the two capacitive probes to provide [2] two tuning axis and the inductive reactance of two fixed inductive posts to provide [the] two additional [axis] axes of tuning, thereby allowing four axes of tuning with the movement of only two members, the capacitive probes. A third capacitive probe/inductive post set can be added to the two probe configuration for extremely high reflection correction at all phase angles.

Claims

1. In an electromagnetic processing system including a waveguide and a tuner network including at least two alterable capacitive members, the improvement of said at least two capacitive members being axially spaced in respect to the waveguide, for each said capacitive member there are a pair of inductive members, each pair of said inductive members being laterally located substantially perpendicular of a plane running through said alterable capacitive members, each of said inductive members having a longitudinal axis,

and said pair of inductive members being located in the waveguide substantially laterally beside said respective capacitive member with said longitudinal axis of said inductive members being located substantially parallel to said longitudinal axis of said respective capacitive member.

2. The system of claim 1 characterized in that said pair of inductive members are located on opposite sides of its respective alterable capacitive member.

3. The system of claim 1 characterized in that the waveguide has a rectangular lateral cross section, said rectangular cross section having a largest dimension wall,

said capacitive member having a longitudinal axis, and said longitudinal axis of said capacitive member extending substantially perpendicular to said largest dimension wall.

4. The system of claim 1 characterized in that the waveguide has a rectangular lateral cross section with opposing walls and said inductive members extending across the waveguide between said larger dimension opposing walls.

5. The system of claim 1 characterized in that the waveguide has a circular lateral cross section and said capacitive members being probes located symmetrically in respect to said circular cross section.

6. The system of claim 1 characterized in that the waveguide has a wall and each of said pair of inductive members is located between their respective said capacitive member and said wall.

7. A system for processing a substrate with an electromagnetic field comprising an electromagnetic generator, said electromagnetic generator producing an electromagnetic field directed through a waveguide, said electromagnetic field having electrical parameters,

a tuner network, said tuner network being connected to said waveguide to control said electrical parameters of said electromagnetic field,

said tuner network including two capacitive members, said two capacitive members being in said waveguide, said tuner network further including a pair of inductive members for each said capacitive member, each said pair of inductive members being located adjacent to its respective said capacitive member in said waveguide symmetrically on opposite sides of their respective capacitive probe and laterally of a line running through said least two capacitive members at a point coextensive with the longitudinal axis of their respective capacitive member, said two capacitive members and said two inductive members effecting said electrical parameters of said electromagnetic field,

and said tuner network altering said electromagnetic field based upon the movement of one or both of said two capacitive members.

8. The system of claim 7 characterized in that said electrical parameters include energy reflected from the substrate and said optimizing said electromagnetic field includes adjusting said reflected energy to substantially zero to match said electromagnetic field to the process.

9. The system of claim 7 characterized in that said two inductive members each are a pair of posts located laterally of a line running through said two capacitive members.

10. The system of claim 7 characterized in that said inductive members are fixed to said waveguide.

11. The system of claim 7 characterized in that the waveguide has a rectangular lateral cross section, said rectangular cross section having a largest dimension wall,

said capacitive member having a longitudinal axis, and said longitudinal axis of said capacitive member extending substantially perpendicular to said largest dimension wall.

12. The system of claim 7 characterized in that the waveguide has a circular lateral cross section and said capacitive member being a probe located symmetrically in respect to said circular cross section.

13. The system of claim 9 characterized in that said pair of posts of said two inductive members are located symmetrically on at least opposite sides of their respective capacitive member laterally of a line running through said two capacitive members.

14. A system for processing a substrate with an electromagnetic field comprising an electromagnetic generator, said electromagnetic generator producing an electromagnetic field directed through a rectangular cross section waveguide, the waveguide having a broadest wall dimension, said electromagnetic field having electrical parameters,

a tuner network, said tuner network being connected to said waveguide to control said electrical parameters of said electromagnetic field,

said tuner network including two capacitive probes, said two capacitive probes being in said waveguide extending perpendicular to said broadest wall, said tuner network further including two pairs of inductive posts,

each said pair of inductive posts being located adjacent to said two capacitive probes respectively in said waveguide symmetrically on opposite sides of their respective capacitive probe and laterally of a line running through said least two capacitive probes at the intersection of said line and said respective probe, said two capacitive probes and said two inductive posts effecting said electrical parameters of said electromagnetic field,

and said tuner network altering said electromagnetic field based upon the movement of one or both of said two capacitive probes.

15. The system of claim 14 characterized in that said electrical parameters include energy reflected from the substrate and said optimizing said electromagnetic field includes adjusting said reflected energy to substantially zero to match said electromagnetic field to the process.

16. The system of claim 14 characterized in that each of said pair of inductive posts are located laterally of a line running through said two capacitive probes respectively.

17. The system of claim 14 characterized in that said pair of inductive posts are fixed to said waveguide.

18. The system of claim 14 characterized in that said electromagnetic parameters includes wavelength, said two capacitive probes being separated by a distance, and said distance being set by a function of said wavelength.

19. The system of claim 18 characterized in that said distance is physically set by the physical location of said two capacitive probes in respect to said waveguide.

20. The system of claim 18 characterized in that said distance is electrically set by said tuner network.

21. The system of claim 18 characterized in that said electromagnetic field parameters includes capacitive reactance and inductive reactance.

22. The system of claim 21 characterized in that said capacitive reactance and said inductive reactance are adjusted to be substantially equal with no reflection from the process substrate.