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Method of programming phase-change memory element

  • US 6,075,719 A
  • Filed: 06/22/1999
  • Issued: 06/13/2000
  • Est. Priority Date: 06/22/1999
  • Status: Expired due to Term
First Claim
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1. A method of programming an electrically programmable, phase-change memory element to a low resistance state, said memory element including a volume of phase-change memory material having at least said low resistance state and a detectably distinct high resistance state, said method comprising the steps of:

  • applying a first pulse of energy to said memory material, said first pulse sufficient to transform said memory material from said low resistance state to said high resistance state; and

    applying a second pulse of energy to said memory material following said first pulse, said second pulse sufficient to transform said memory material from said high resistance state to said low resistance state.

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