Method of programming phase-change memory element

• US 6,075,719 A
• Filed: 06/22/1999
• Issued: 06/13/2000
• Est. Priority Date: 06/22/1999
• Status: Expired due to Term

• Current Assignee: Ovonyx Memory Technology, LLC (Micron Technology, Inc.)
• Original Assignee: Energy Conversion Devices
• Inventors: Lowrey, Tyler, Wicker, Guy C., Pashmakov, Boil, Klersy, Patrick J., Kostylev, Sergey A., Czubatyj, Wolodymyr
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Lam, David
• Application Number:
  US09/337,778
• Time in Patent Office: 357 Days
• Field of Search: 365/148, 365/151, 365/163, 365/100
• US Class Current: 365/148
• CPC Class Codes: G11C 13/0004 comprising amorphous/crystalline phase transition cells
• CPC Class Codes: G11C 13/0064 Verifying circuits or methods
• CPC Class Codes: G11C 13/0069 Writing or programming circuits or methods

Abstract

A method of programming an electrically programmable phase-change memory element to the low resistance state. A first pulse of energy sufficient to transform the device from the low to high resistance states is applied, and a second pulse of energy sufficient to transform the device from the high to low resistance states is applied following the first pulse. In another programming method, the present and desired device states are compared, and programming pulses are applied only if the state of the device needs to be changed.

Claims

1. A method of programming an electrically programmable, phase-change memory element to a low resistance state, said memory element including a volume of phase-change memory material having at least said low resistance state and a detectably distinct high resistance state, said method comprising the steps of:

applying a first pulse of energy to said memory material, said first pulse sufficient to transform said memory material from said low resistance state to said high resistance state; and

applying a second pulse of energy to said memory material following said first pulse, said second pulse sufficient to transform said memory material from said high resistance state to said low resistance state.

2. The method of claim 1, wherein the energy of said first pulse and said second pulse is electrical energy.

3. The method of claim 1, wherein said first pulse and said second pulse are current pulses.

4. The method of claim 1, wherein the duration of said first pulse is less than the duration of said second pulse.

5. The method of claim 1, wherein the amplitude of said first pulse is greater than the amplitude of said second pulse.

6. The method of claim 1, wherein said phase-change material comprises at least one chalcogen element.

7. A method of setting an electrically programmable, phase-change memory element having at least a low resistance state and a detectably distinct high resistance state, said method comprising the steps of:

applying a first pulse of energy to said memory material, said first pulse sufficient to transform said memory material from said low resistance state to said high resistance state; and

applying a second pulse of energy to said memory material following said first pulse, said second pulse sufficient to transform said memory material from said high resistance state to said low resistance state.

8. The method of claim 7, wherein the energy of said first pulse and said second pulse is electrical energy.

9. The method of claim 7, wherein said first pulse and said second pulse are current pulses.

10. The method of claim 7, wherein the duration of said first pulse is less than the duration of said second pulse.

11. The method of claim 7, wherein the amplitude of said first pulse is greater than the amplitude of said second pulse.

12. The method of claim 7, wherein said phase-change material comprises at least one chalcogen element.

13. A method of programming an electrically programmable, phase-change memory element to a desired state, said memory element including a volume of phase-change memory material having at least a low resistance state and a detectably distinct high resistance state, said method comprising the steps of:

reading the present state of said memory element;

determining whether the present state is equal to said desired state; and

if not,

programming said memory element from the present state to said desired state.

14. The method of claim 13, wherein said reading step comprises the step of:

applying a read pulse of energy to said memory material; and

determining the resistance of said memory material.

15. The method of claim 14, wherein said energy is electrical energy.

16. The method of claim 14, wherein said read pulse is a voltage pulse.

17. The method of claim 13, wherein said determining step comprises the step of comparing the present resistance of said memory material to said desired resistance state.

18. The method of claim 13, wherein said phase-change material includes a chalcogen element.