Polarization selective semiconductor laser, optical transmitter using the same, optical communication system using the same and fabrication method of the same

• US 6,075,799 A
• Filed: 08/26/1997
• Issued: 06/13/2000
• Est. Priority Date: 08/28/1996
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Uchida, Mamoru, Ogusu, Makoto
• Primary Examiner(s): Davie, James W.
• Application Number:
  US08/917,700
• Time in Patent Office: 1,022 Days
• Field of Search: 372/27, 372/50, 372/45, 372/96
• US Class Current: 372/27
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/06236 controlling the polarisation, e.g. TM/TE polarisation switching
• CPC Class Codes: H01S 5/06258 with DFB-structure
• CPC Class Codes: H01S 5/1017 Waveguide having a void for insertion of materials to change optical properties
• CPC Class Codes: H01S 5/1021 Coupled cavities H01S5/14 takes precedence
• CPC Class Codes: H01S 5/125 Distributed Bragg reflector [DBR] lasers
• CPC Class Codes: H01S 5/3404 influencing the polarisation
• CPC Class Codes: H01S 5/4031 Edge-emitting structures
• CPC Class Codes: H01S 5/4087 emitting more than one wavelength
• CPC Class Codes: H01S 5/5036 the arrangement being polarisation-selective

Abstract

A semiconductor laser capable of controlling a polarization mode of output light is disclosed. In a fabrication method of the laser, after two laser portions are independently formed, the laser portions are positioned to be optically coupled to each other. In another fabrication method of the laser, after at least portions of two laser portions are separately formed, an irregularly-formed portion at a boundary portion therebetween is removed. The fabrication method can be facilitated and a degree of freedom in the polarization control can be increased, since the two laser portions are separately formed.

Claims

1. A semiconductor laser capable of switching a polarization mode of output light, said laser comprising:

a first semiconductor laser structure, a gain for a first polarization mode being larger than a gain for a second polarization mode in said first semiconductor laser structure; and

a second semiconductor laser structure, a gain for the second polarization mode being larger than a gain for the first polarization mode in said second semiconductor laser structure;

wherein said first semiconductor laser structure and said second semiconductor laser structure are arranged with a spacing therebetween in a light waveguide direction.

2. A semiconductor laser according to claim 1, wherein each of said first semiconductor laser structure and said second semiconductor laser structure is constructed such that the first and second polarization modes are permitted to propagate therein.

3. A semiconductor laser according to claim 1, wherein each of said first semiconductor laser structure and said second semiconductor laser structure includes an active layer and a waveguide layer.

4. A semiconductor laser according to claim 1, wherein said first semiconductor laser structure and said second semiconductor laser structure are serially arranged in the light waveguide direction.

5. A semiconductor laser according to claim 1, wherein said first semiconductor laser structure includes an active region and a cavity, and said active region and said cavity are constructed such that the gain for the first polarization mode is larger than the gain for the second polarization mode.

6. A semiconductor laser according to claim 5, wherein said cavity of said first semiconductor laser structure includes a diffraction grating and is constructed such that resonance is caused by distributed reflection due to said diffraction grating.

7. A semiconductor laser according to claim 6, wherein said cavity of said first semiconductor laser structure comprises one of a distributed feedback cavity and a distributed Bragg reflection cavity.

8. A semiconductor laser according to claim 7, wherein a Bragg wavelength of one of said distributed feedback cavity and said distributed Bragg reflection cavity is set close to a peak wavelength of a gain spectrum of said first semiconductor laser structure.

9. A semiconductor laser according to claim 1, wherein said second semiconductor laser structure includes an active region and a cavity, and said active region and said cavity are constructed such that the gain for the second polarization mode is larger than the gain for the first polarization mode.

10. A semiconductor laser according to claim 9, wherein said cavity of said second semiconductor laser structure comprises one of a Fabry-Perot cavity, a distributed feedback cavity constructed such that resonance is caused by distributed reflection due to a diffraction grating and a distributed Bragg reflection cavity constructed such that resonance is caused by distributed reflection due to a diffraction grating.

11. A semiconductor laser according to claim 10, wherein a Bragg wavelength of one of said distributed feedback cavity and said distributed Bragg reflection cavity is set close to a peak wavelength of a gain spectrum of said second semiconductor laser structure.

12. A semiconductor laser according to claim 1, wherein said first semiconductor laser structure and said second semiconductor laser structure are constructed such that propagation constants for each of the first polarization mode and the second polarization mode are approximately equal to each other between said first semiconductor laser structure and said second semiconductor laser structure.

13. A semiconductor laser according to claim 1, wherein said laser is constructed such that the polarization mode thereof is switched between the first polarization mode and the second polarization mode by a control of carriers injected into at least one of said first semiconductor laser structure and said second semiconductor laser structure.

14. A semiconductor laser according to claim 1, wherein said first semiconductor laser structure and said second semiconductor laser structure respectively comprise substrates with layer structures thereon formed independently from each other.

15. A semiconductor laser according to claim 14, wherein said first semiconductor laser structure and said second semiconductor laser structure are mounted on a common support member.

16. A semiconductor laser according to claim 1, wherein at least portions of said first semiconductor laser structure and said second semiconductor laser structure are separately formed on a common substrate.

17. A semiconductor laser according to claim 16, wherein each of said at least portions includes at least one of an active layer and a waveguide layer.

18. A semiconductor laser according to claim 1, wherein end facets of said first semiconductor laser structure and said second semiconductor laser structure, opposed to each other with said spacing therebetween, are formed slantingly to the waveguide direction.

19. A semiconductor laser according to claim 1, wherein said first semiconductor laser structure includes one of a distributed feedback cavity and a distributed Bragg reflection cavity, said second semiconductor laser structure includes one of a distributed feedback cavity and a distributed Bragg reflection cavity and end facets of said first semiconductor laser structure and said second semiconductor laser structure, opposed to each other with said spacing therebetween, are formed slantingly to the waveguide direction.

20. A semiconductor laser according to claim 1, wherein said first semiconductor laser structure includes one of a distributed feedback cavity and a distributed Bragg reflection cavity, said second semiconductor laser structure includes a Fabry-Perot cavity and an end facet of said first semiconductor laser structure out of end facets of said first semiconductor laser structure and said second semiconductor laser structure, opposed to each other with said spacing therebetween, is formed slantingly to the waveguide direction.

21. A semiconductor laser according to claim 1, wherein an AR coat is provided on at least one of end facets of said first semiconductor laser structure and said second semiconductor laser structure to depress reflection at said end facet.

22. A semiconductor laser according to claim 1, wherein at least one of said first semiconductor laser structure and said second semiconductor laser structure includes an active region of a quantum well structure.

23. A semiconductor laser according to claim 22, wherein said quantum well structure comprises a strained quantum well structure, a strain being introduced into at least a portion of said strained quantum well structure.

24. A semiconductor laser according to claim 1, wherein said spacing is filled with a filler.

25. A semiconductor laser according to claim 24, wherein said spacing filled with said filler constitutes a phase control region.

26. A semiconductor laser according to claim 24, wherein said filler filling said spacing is material whose refractive index can be electrically adjusted.

27. A semiconductor laser according to claim 26, further comprising optical-length controlling means for controlling the refractive index of said material to control an optical length at said spacing.

28. A semiconductor laser according to claim 26, further comprising an electrode for electrically controlling said material to control an optical length at said spacing.

29. A semiconductor laser capable of switching a polarization mode of output light, said laser comprising:

a first semiconductor laser array, said first semiconductor laser array including a plurality of first semiconductor laser structures arranged in a parallel manner, and a gain for a first polarization mode being larger than a gain for a second polarization mode in each of said first semiconductor laser structures; and

a second semiconductor laser array, said second semiconductor laser array including a plurality of second semiconductor laser structures arranged in a parallel manner, and a gain for the second polarization mode being larger than a gain for the first polarization mode in each of said second semiconductor laser structures;

wherein said first semiconductor laser array and said second semiconductor laser array are arranged with a spacing therebetween, and said first semiconductor laser structure and said second semiconductor laser structure, corresponding to each other, are arranged with a spacing therebetween in a light waveguide direction.

30. A semiconductor laser according to claim 29, wherein the plurality of said first semiconductor laser structures include a common active region.

31. A semiconductor laser according to claim 29, wherein each of the plurality of said first semiconductor laser structures includes an active region whose gain peak for the first polarization mode can be controlled by the amount of carriers injected therein.

32. A semiconductor laser according to claim 29, wherein said spacing is filled with a filler.

33. A semiconductor laser according to claim 29, wherein each of said first semiconductor laser structures and said second semiconductor laser structures is constructed such that the first and second polarization modes are permitted to propagate therein.

34. A semiconductor laser according to claim 29, wherein each of said first semiconductor laser structures and said second semiconductor laser structures includes an active layer and a waveguide layer.

35. A semiconductor laser according to claim 29, wherein said first semiconductor laser structure and said second semiconductor laser structure, corresponding to each other, are serially arranged in the light waveguide direction.

36. A semiconductor laser according to claim 29, wherein each of said first semiconductor laser structures includes an active region and a cavity, and said active region and said cavity are constructed such that the gain for the first polarization mode is larger than the gain for the second polarization mode.

37. A semiconductor laser according to claim 36, wherein said cavity of said first semiconductor laser structure includes a diffraction grating and is constructed such that resonance is caused by distributed reflection due to said diffraction grating.

38. A semiconductor laser according to claim 37, wherein said cavity of said first semiconductor laser structure comprises one of a distributed feedback cavity and a distributed Bragg reflection cavity.

39. A semiconductor laser according to claim 38, wherein a Bragg wavelength of one of said distributed feedback cavity and said distributed Bragg reflection cavity is set close to a peak wavelength of a gain spectrum of said first semiconductor laser structure.

40. A semiconductor laser according to claim 29, wherein each of said second semiconductor laser structures includes an active region and a cavity, and said active region and said cavity are constructed such that the gain for the second polarization mode is larger than the gain for the first polarization mode.

41. A semiconductor laser according to claim 40, wherein said cavity of said second semiconductor laser structure comprises one of a Fabry-Perot cavity, a distributed feedback cavity constructed such that resonance is caused by distributed reflection due to a diffraction grating and a distributed Bragg reflection cavity constructed such that resonance is caused by distributed reflection due to a diffraction grating.

42. A semiconductor laser according to claim 41, wherein a Bragg wavelength of one of said distributed feedback cavity and said distributed Bragg reflection cavity is set close to a peak wavelength of a gain spectrum of said second semiconductor laser structure.

43. A semiconductor laser according to claim 29, wherein said first semiconductor laser structure and said second semiconductor laser structure, corresponding to each other, are constructed such that propagation constants for each of the first polarization mode and the second polarization mode are approximately equal to each other between said first semiconductor laser structure and said second semiconductor laser structure.

44. A semiconductor laser according to claim 29, wherein a laser structure consisting of said first semiconductor laser structure and said second semiconductor laser structure, corresponding to each other, is constructed such that the polarization mode thereof is switched between the first polarization mode and the second polarization mode by a control of carriers injected into at least one of said first semiconductor laser structure and said second semiconductor laser structure.

45. A semiconductor laser according to claim 29, wherein said first semiconductor laser array and said second semiconductor laser array respectively comprise substrates with layer structures thereon formed independently from each other.

46. A semiconductor laser according to claim 45, wherein said first semiconductor laser array and said second semiconductor laser array are mounted on a common support member.

47. A semiconductor laser according to claim 29, wherein at least portions of said first semiconductor laser array and said second semiconductor laser array are separately formed on a common substrate.

48. A semiconductor laser according to claim 47, wherein each of said at least portions includes at least one of an active layer and a waveguide layer.

49. A semiconductor laser according to claim 29, wherein end facets of said first semiconductor laser structure and said second semiconductor laser structure, opposed to each other with said spacing therebetween, are formed slantingly to the waveguide direction.

50. A semiconductor laser according to claim 29, wherein each of said first semiconductor laser structures includes one of a distributed feedback cavity and a distributed Bragg reflection cavity, each of said second semiconductor laser structures includes one of a distributed feedback cavity and a distributed Bragg reflection cavity and end facets of said first semiconductor laser structure and said second semiconductor laser structure, opposed to each other with said spacing therebetween, are formed slantingly to the waveguide direction.

51. A semiconductor laser according to claim 29, wherein each of said first semiconductor laser structures includes one of a distributed feedback cavity and a distributed Bragg reflection cavity, each of said second semiconductor laser structures includes a Fabry-Perot cavity and an end facet of said first semiconductor laser structure out of end facets of said first semiconductor laser structure and said second semiconductor laser structure, opposed to each other with said spacing therebetween, is formed slantingly to the waveguide direction.

52. A semiconductor laser according to claim 29, wherein an AR coat is provided on at least one of end facets of said first semiconductor laser structure and said second semiconductor laser structure to depress reflection at said end facet.

53. A semiconductor laser according to claim 29, wherein at least one of said first semiconductor laser structure and said second semiconductor laser structure includes an active region of a quantum well structure.

54. A semiconductor laser according to claim 53, wherein said quantum well structure comprises a strained quantum well structure, a strain being introduced into at least a portion of said strained quantum well structure.

55. A semiconductor laser according to claim 32, wherein said spacing filled with said filler constitutes a phase control region.

56. A semiconductor laser according to claim 32, wherein said filler filling said spacing is material whose refractive index can be electrically adjusted.

57. A semiconductor laser according to claim 56, further comprising optical-length controlling means for controlling the refractive index of said material to control an optical length at said spacing.

58. A semiconductor laser according to claim 56, further comprising an electrode for electrically controlling said material to control an optical length at said spacing.

59. A semiconductor laser capable of switching a polarization mode of output light, comprising:

a first semiconductor laser array, said first semiconductor laser array including a plurality of first semiconductor laser structures arranged in a parallel manner, and a gain for a first polarization mode being larger than a gain for a second polarization mode in each of said first semiconductor laser structures; and

a second semiconductor laser array, said second semiconductor laser array including a plurality of second semiconductor laser structures arranged in a parallel manner, and a gain for the second polarization mode being larger than a gain for the first polarization mode in each of said second semiconductor laser structures;

wherein the plurality of said first semiconductor laser structures in said first semiconductor laser array respectively correspond to the plurality of said second semiconductor laser structures in said second semiconductor laser array.

60. A semiconductor laser according to claim 59, wherein the plurality of said first semiconductor laser structures include a common active region.

61. A semiconductor laser according to claim 59, wherein each of the plurality of said first semiconductor laser structures includes an active region whose gain peak for the first polarization mode can be controlled by the amount of carriers injected therein.

62. A semiconductor laser according to claim 59, wherein each of said first semiconductor laser structures and said second semiconductor laser structures is constructed such that the first and second polarization modes are permitted to propagate therein.

63. A semiconductor laser according to claim 59, wherein each of said first semiconductor laser structures and said second semiconductor laser structures includes an active layer and a waveguide layer.

64. A semiconductor laser according to claim 59, wherein said first semiconductor laser structure and said second semiconductor laser structure, corresponding to each other, are serially arranged in the light waveguide direction.

65. A semiconductor laser according to claim 59, wherein each of said first semiconductor laser structures includes an active region and a cavity, and said active region and said cavity are constructed such that the gain for the first polarization mode is larger than the gain for the second polarization mode.

66. A semiconductor laser according to claim 65, wherein said cavity of said first semiconductor laser structure includes a diffraction grating and is constructed such that resonance is caused by distributed reflection due to said diffraction grating.

67. A semiconductor laser according to claim 66, wherein said cavity of said first semiconductor laser structure comprises one of a distributed feedback cavity and a distributed Bragg reflection cavity.

68. A semiconductor laser according to claim 67, wherein a Bragg wavelength of one of said distributed feedback cavity and said distributed Bragg reflection cavity is set close to a peak wavelength of a gain spectrum of said first semiconductor laser structure.

69. A semiconductor laser according to claim 59, wherein each of said second semiconductor laser structures includes an active region and a cavity, and said active region and said cavity are constructed such that the gain for the second polarization mode is larger than the gain for the first polarization mode.

70. A semiconductor laser according to claim 69, wherein said cavity of said second semiconductor laser structure comprises one of a Fabry-Perot cavity, a distributed feedback cavity constructed such that resonance is caused by distributed reflection due to a diffraction grating and a distributed Bragg reflection cavity constructed such that resonance is caused by distributed reflection due to a diffraction grating.

71. A semiconductor laser according to claim 70, wherein a Bragg wavelength of one of said distributed feedback cavity and said distributed Bragg reflection cavity is set close to a peak wavelength of a gain spectrum of said second semiconductor laser structure.

72. A semiconductor laser according to claim 59, wherein said first semiconductor laser structure and said second semiconductor laser structure, corresponding to each other, are constructed such that propagation constants for each of the first polarization mode and the second polarization mode are approximately equal to each other between said first semiconductor laser structure and said second semiconductor laser structure.

73. A semiconductor laser according to claim 59, wherein a laser structure consisting of said first semiconductor laser structure and said second semiconductor laser structure, corresponding to each other, is constructed such that the polarization mode thereof is switched between the first polarization mode and the second polarization mode by a control of carriers injected into at least one of said first semiconductor laser structure and said second semiconductor laser structure.

74. A semiconductor laser according to claim 59, wherein said first semiconductor laser array and said second semiconductor laser array respectively comprise substrates with layer structures thereon formed independently from each other.

75. A semiconductor laser according to claim 74, wherein said first semiconductor laser array and said second semiconductor laser array are mounted on a common support member.

76. A semiconductor laser according to claim 59, wherein at least portions of said first semiconductor laser array and said second semiconductor laser array are separately formed on a common substrate.

77. A semiconductor laser according to claim 76, wherein each of said at least portions includes at least one of an active layer and a waveguide layer.

78. A semiconductor laser according to claim 59, wherein an AR coat is provided on at least one of end facets of said first semiconductor laser structure and said second semiconductor laser structure to depress reflection at said end facet.

79. A semiconductor laser according to claim 59, wherein at least one of said first semiconductor laser structure and said second semiconductor laser structure includes an active region of a quantum well structure.

80. A semiconductor laser according to claim 79, wherein said quantum well structure comprises a strained quantum well structure, a strain being introduced into at least a portion of said strained quantum well structure.

81. An optical transmitter for transmitting an optical signal, said transmitter comprising:

a semiconductor laser capable of switching a polarization mode of output light, said laser including;

a first semiconductor laser structure, a gain for a first polarization mode being larger than a gain for a second polarization mode in said first semiconductor laser structure; and

a second semiconductor laser structure, a gain for the second polarization mode being larger than a gain for the first polarization mode in said second semiconductor laser structure;

wherein said first semiconductor laser structure and said second semiconductor laser structure are arranged with a spacing therebetween in a light waveguide direction; and

a control circuit for modulating the polarization mode of the output light of said semiconductor laser in accordance with a signal to be transmitted.

82. An optical transmitter according to claim 81, further comprising polarization selecting means for selecting a light component in a predetermined polarization mode from the output light of said semiconductor laser.

83. An optical transmitter according to claim 81, wherein said spacing is filled with a filler.

84. An optical transmitter for transmitting an optical signal, said transmitter comprising:

a semiconductor laser capable of switching a polarization mode of output light, said laser including;

a first semiconductor laser array, said first semiconductor laser array including a plurality of first semiconductor laser structures arranged in a parallel manner, and a gain for a first polarization mode being larger than a gain for a second polarization mode in each of said first semiconductor laser structures; and

a second semiconductor laser array, said second semiconductor laser array including a plurality of second semiconductor laser structures arranged in a parallel manner, and a gain for the second polarization mode being larger than a gain for the first polarization mode in each of said second semiconductor laser structures;

wherein said first semiconductor laser array and said second semiconductor laser array are arranged with a spacing therebetween, and said first semiconductor laser structure and said second semiconductor laser structure, corresponding to each other, are arranged with a spacing therebetween in a light waveguide direction; and

a control circuit for modulating the polarization modes of the output light of said semiconductor laser in accordance with signals to be transmitted.

85. An optical transmitter according to claim 84, further comprising polarization selecting means for selecting a light component in a predetermined polarization mode from the output light of said semiconductor laser.

86. An optical transmitter according to claim 84, wherein said spacing is filled with a filler.

87. An optical transmitter for transmitting an optical signal, said transmitter comprising:

a first semiconductor laser array, said first semiconductor laser array including a plurality of first semiconductor laser structures arranged in a parallel manner, and a gain for a first polarization mode being larger than a gain for a second polarization mode in each of said first semiconductor laser structures; and

a second semiconductor laser array, said second semiconductor laser array including a plurality of second semiconductor laser structures arranged in a parallel manner, and a gain for the second polarization mode being larger than a gain for the first polarization mode in each of said second semiconductor laser structures;

wherein the plurality of said first semiconductor laser structures in said first semiconductor laser array respectively correspond to the plurality of said second semiconductor laser structures in said second semiconductor laser array; and

a control circuit for modulating the polarization modes of the output light of said semiconductor laser in accordance with signals to be transmitted.

88. An optical transmitter according to claim 87, further comprising polarization selecting means for selecting a light component in a predetermined polarization mode from the output light of said semiconductor laser.

89. An optical communication system for transmitting information using an optical signal, said system comprising:

(a) an optical transmitter for transmitting an optical signal, said transmitter including;

a semiconductor laser capable of switching a polarization mode of output light, said laser including;

a first semiconductor laser structure, a gain for a first polarization mode being larger than a gain for a second polarization mode in said first semiconductor laser structure; and

a second semiconductor laser structure, a gain for the second polarization mode being larger than a gain for the first polarization mode in said second semiconductor laser structure;

wherein said first semiconductor laser structure and said second semiconductor laser structure are arranged with a spacing therebetween in a light waveguide direction; and

a control circuit for modulating the polarization mode of the output light of said semiconductor laser in accordance with a signal to be transmitted; and

(b) an optical receiver for receiving the optical signal transmitted by said optical transmitter.

90. An optical communication system according to claim 89, further comprising polarization selecting means for selecting a light component in a predetermined polarization mode from the output light of said semiconductor laser.

91. An optical communication system according to claim 89, wherein said spacing is filled with a filler.

92. An optical communication system for transmitting information using an optical signal, said system comprising:

(a) an optical transmitter for transmitting an optical signal, said transmitter including;

a semiconductor laser capable of switching a polarization mode of output light, said laser including;

a first semiconductor laser array, said first semiconductor laser array including a plurality of first semiconductor laser structures arranged in a parallel manner, and a gain for a first polarization mode being larger than a gain for a second polarization mode in each of said first semiconductor laser structures; and

a second semiconductor laser array, said second semiconductor laser array including a plurality of second semiconductor laser structures arranged in a parallel manner, and a gain for the second polarization mode being larger than a gain for the first polarization mode in each of said second semiconductor laser structures;

wherein said first semiconductor laser array and said second semiconductor laser array are arranged with a spacing therebetween, and said first semiconductor laser structure and said second semiconductor laser structure, corresponding to each other, are arranged with a spacing therebetween in a light waveguide direction; and

a control circuit for modulating the polarization modes of the output light of said semiconductor laser in accordance with signals to be transmitted; and

(b) an optical receiver for receiving the optical signal transmitted by said optical transmitter.

93. An optical communication system according to claim 92, further comprising polarization selecting means for selecting a light component in a predetermined polarization mode from the output light of said semiconductor laser.

94. An optical communication system according to claim 92, wherein said spacing is filled with a filler.

95. An optical communication system for transmitting information using an optical signal, said system comprising:

(a) an optical transmitter for transmitting an optical signal, said transmitter including;

a first semiconductor laser array, said first semiconductor laser array including a plurality of first semiconductor laser structures arranged in a parallel manner, and a gain for a first polarization mode being larger than a gain for a second polarization mode in each of said first semiconductor laser structures; and

a second semiconductor laser array, said second semiconductor laser array including a plurality of second semiconductor laser structures arranged in a parallel manner, and a gain for the second polarization mode being larger than a gain for the first polarization mode in each of said second semiconductor laser structures;

wherein the plurality of said first semiconductor laser structures in said first semiconductor laser array respectively correspond to the plurality of said second semiconductor laser structures in said second semiconductor laser array; and

a control circuit for modulating the polarization modes of the output light of said semiconductor laser in accordance with signals to be transmitted; and

(b) an optical receiver for receiving the optical signal transmitted by said optical transmitter.

96. An optical communication system according to claim 95, further comprising polarization selecting means for selecting a light component in a predetermined polarization mode from the output light of said semiconductor laser.