Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
First Claim
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1. A plasma reactor for processing a workpiece, said reactor comprising:
- a reactor enclosure defining a chamber;
a base within said chamber for supporting said workpiece;
a semiconductor window overlying said base; and
an inductive antenna adjacent a side of said semiconductor window opposite said base.
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Abstract
The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor window, a base within the chamber for supporting the workpiece during processing thereof, a gas inlet system for admitting a plasma precursor gas into the chamber, and an inductive antenna adjacent a side of the semiconductor window opposite the base for coupling power into the interior of the chamber through the semiconductor window electrode.
262 Citations
67 Claims
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1. A plasma reactor for processing a workpiece, said reactor comprising:
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a reactor enclosure defining a chamber; a base within said chamber for supporting said workpiece; a semiconductor window overlying said base; and an inductive antenna adjacent a side of said semiconductor window opposite said base. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A plasma reactor for processing workpiece, said reactor comprising:
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a reactor enclosure defining a processing chamber; a base within said chamber for supporting said workpiece during the processing thereof; a roof overlying said base, said roof being of an electrical conductivity sufficient to act as an electrode and of an electrical resistivity sufficient to permit inductive coupling of power therethrough into said chamber; and an inductive antenna adjacent said roof on a side opposite said base. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 35, 36, 37, 38, 39, 40)
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34. A plasma reactor for processing workpiece, said reactor comprising:
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a reactor enclosure defining a processing chamber; a base within said chamber for supporting said workpiece during the processing thereof; a roof overlying said base, said roof being of an electrical conductivity sufficient to act as an electrode while permitting inductive coupling of power therethrough into said chamber; and an inductive antenna adjacent said roof on a side opposite said base. - View Dependent Claims (41, 42, 43, 44, 45, 46)
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47. A plasma reactor for processing workpiece within a process region of said reactor, said reactor comprising:
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a base within said process region for supporting said workpiece during the processing thereof; a roof overlying said base, said roof being of an electrical conductivity sufficient to act as an electrode and of an electrical resistivity sufficient to permit inductive coupling of power therethrough into said chamber; and an inductive antenna adjacent said roof on a side opposite said base. - View Dependent Claims (48, 49, 50, 51, 52, 53, 54)
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55. A plasma reactor for processing workpiece within a process region of said reactor, said reactor comprising:
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a base within said process region for supporting said workpiece during the processing thereof; a semiconductor window overlying said base; and an inductive antenna adjacent said roof on a side opposite said base. - View Dependent Claims (56, 57, 58)
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59. A plasma reactor for processing workpiece, said reactor comprising:
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a semiconductor enclosure formed primarily of semiconductor material and defining a chamber; a base within said process region for supporting said workpiece during the processing thereof; and a semiconductor electrode formed primarily of semiconductor material and overlying said base. - View Dependent Claims (60, 61, 62, 63, 64, 65, 66, 67)
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Specification