Method of crystallizing thin films when manufacturing semiconductor devices

• US 6,077,758 A
• Filed: 12/18/1996
• Issued: 06/20/2000
• Est. Priority Date: 07/27/1993
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ohnuma, Hideto, Takemura, Yasuhiko, Zhang, Hongyong
• Primary Examiner(s): Chaudhari, Chandra
• Assistant Examiner(s): PERT, EVAN T
• Application Number:
  US08/768,563
• Time in Patent Office: 1,280 Days
• Field of Search: 438/149, 438/310, 438/143, 438/449, 438/402, 438/471, 438/473, 438/478, 438/479, 438/486, 438/487, 438/166, 438/482, 438/488, 438/DIG. 967
• US Class Current: 438/486
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 21/3221 of silicon bodies, e.g. for gettering
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: Y10S 148/004 Annealing, incoherent light
• CPC Class Codes: Y10S 148/016 Catalyst
• CPC Class Codes: Y10S 148/06 Gettering

Abstract

After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is doped therein. The area not crystallized by annealing is also crystallized by radiation of intense rays and a condensed silicon film is formed.

After a metal element which promotes crystallization is doped, annealing by light for a short time is performed by radiating intense rays onto the silicon film crystallized by annealing in an atmosphere containing halide. After the surface of the silicon film is oxidized by heating or by radiating intense rays in a halogenated atmosphere and an oxide film is formed on the silicon film, the oxide film is then etched. As a result, nickel in the silicon film is removed.

Claims

1. A method of manufacturing a semiconductor device comprising the steps of:

forming a non-single crystalline semiconductor film on an insulating surface;

providing said semiconductor film with a catalyst material which is capable of promoting crystallization of said semiconductor film;

performing a first crystallization of said semiconductor film provided with said catalyst material;

performing a second crystallization of said semiconductor film after said first crystallization in an atmosphere containing a halogen compound gas in order to reduce a concentration of said catalyst material in said semiconductor film.

2. The method of claim 1 wherein said halogen is selected from the group consisting of fluorine and chlorine.

3. The method of claim 1 wherein said halogen compound gas is selected from the group consisting of HCL, CCl₄, and SiCl₄.

4. The method of claim 1 wherein said halogen compound gas is selected from the group consisting of NF₃ and C₂ F₆.

5. The method of claim 1 wherein said crystallization is performed by heating said semiconductor layer.

6. The method of claim 1 further comprising the step of forming an active region of said semiconductor device in said semiconductor layer.

7. The method of claim 1 wherein said semiconductor layer comprises silicon.

50. A method of manufacturing a semiconductor device according to claim 1 wherein said catalyst material comprises a metal selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cr, Mn, Cu and Zn.

8. A method of manufacturing a semiconductor device comprising the steps of:

forming a non-single crystalline semiconductor film on an insulating surface of a substrate;

disposing a catalyst material in contact with said non-single crystalline semiconductor film;

crystallizing said non-single crystalline semiconductor film by heating wherein said catalyst material functions to promote the crystallization;

patterning said semiconductor film after the crystallization into at least one semiconductor island; and

irradiating said semiconductor island with a light having a wavelength of 4 μ

m to 0.5 μ

m in order to further increase the crystallinity of said semiconductor island.

9. A method of manufacturing a semiconductor device according to claim 8 wherein said catalyst material comprises a metal selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cr, Mn, Cu and Zn.

10. A method of manufacturing a semiconductor device according to claim 8 wherein the irradiation of said light is continued for 10 to 1000 seconds.

11. A method of manufacturing a semiconductor device according to claim 8 wherein said non-single crystalline semiconductor film comprises silicon and has a thickness of 300 to 1500 Å

.

12. A method of manufacturing a semiconductor device according to claim 8 wherein said heating is continued for 4 hours or longer.

13. A method of manufacturing a semiconductor device according to claim 8 wherein said heating is carried out at a temperature 400-650°

C.

14. A method of manufacturing a semiconductor device comprising the steps of:

forming a non-single crystalline semiconductor film on an insulating surface of a substrate;

disposing a catalyst material in contact with said non-single crystalline semiconductor film;

crystallizing said non-single crystalline semiconductor film by heating wherein said catalyst material functions to promote the crystallization;

patterning said semiconductor film after the crystallization into at least one semiconductor island; and

irradiating said semiconductor island with a light having a wavelength of 4 μ

m to 0.5 μ

m in order to further increase the crystallinity of said semiconductor island,

wherein said irradiating step is carried out in an atmosphere including at least one of a fluorine containing material or a chlorine containing material.

15. A method of manufacturing a semiconductor device according to claim 14 wherein said catalyst material comprises a metal selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cr, Mn, Cu and Zn.

16. A method of manufacturing a semiconductor device according to claim 14 wherein the irradiation of said light is continued for 10 to 1000 seconds.

17. A method of manufacturing a semiconductor device according to claim 14 wherein said non-single crystalline semiconductor film comprises silicon and has a thickness of 300 to 1500 Å

.

18. A method of manufacturing a semiconductor device according to claim 14 wherein said heating is continued for 4 hours or longer.

19. A method of manufacturing a semiconductor device according to claim 14 wherein said heating is carried out at a temperature 400-650°

C.

20. A method of manufacturing a semiconductor device according to claim 14 wherein said chlorine containing material is selected from the group consisting of HCl, CCl₄, and SiCl₄.

21. A method of manufacturing a semiconductor device according to claim 14 wherein said fluorine containing material is selected from the group consisting of NF₃ and C₂ F₆.

22. A method of manufacturing a semiconductor device comprising the steps of:

forming a non-single crystalline semiconductor film on an insulating surface of a substrate;

disposing a catalyst material in contact with said non-single crystalline semiconductor film, said catalyst material being for promoting crystallization of said semiconductor film;

crystallizing said non-single crystalline semiconductor film by heating wherein amorphous areas are left between crystals in the semiconductor film;

patterning said semiconductor film after the crystallization into at least one semiconductor island; and

irradiating said semiconductor island with a light in order to crystallize said amorphous areas remaining after the crystallizing step.

23. A method of manufacturing a semiconductor device according to claim 22 wherein said catalyst material comprises a metal selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cr, Mn, Cu and Zn.

24. A method of manufacturing a semiconductor device according to claim 22 wherein the irradiation of said light is continued for 10 to 1000 seconds.

25. A method of manufacturing a semiconductor device according to claim 22 wherein said non-single crystalline semiconductor film comprises silicon and has a thickness of 300 to 1500 Å

.

26. A method of manufacturing a semiconductor device according to claim 22 wherein said heating is continued for 4 hours or longer.

27. A method of manufacturing a semiconductor device according to claim 22 wherein said heating is carried out at a temperature 400-650°

C.

28. A method of manufacturing a semiconductor device according to claim 22 wherein said light has a wavelength of 4 μ

m to 0.5 μ

m.

29. A method of manufacturing a semiconductor device according to claim 22 wherein said light is a laser light.

30. A method of manufacturing a semiconductor device according to claim 22 wherein said irradiating step is carried out in an atmosphere including at least one of a chlorine containing material and a fluorine containing material.

31. A method of manufacturing a semiconductor device comprising the steps of:

forming a non-single crystalline semiconductor film on an insulating surface of a substrate;

disposing a catalyst material in contact with a selected portion of said non-single crystalline semiconductor film, said catalyst material being for promoting crystallization of said semiconductor film;

heating said non-single crystalline semiconductor film so that crystals grow horizontally from said selected portion toward a portion where said catalyst material is not disposed wherein amorphous areas are left between crystals in the semiconductor film;

patterning said semiconductor film after the heating step into at least one semiconductor island; and

irradiating said semiconductor island with a light in order to crystallize said amorphous areas remaining after the crystallizing step.

32. A method of manufacturing a semiconductor device according to claim 31 wherein said catalyst material comprises a metal selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cr, Mn, Cu and Zn.

33. A method of manufacturing a semiconductor device according to claim 31 wherein the irradiation of said light is continued for 10 to 1000 seconds.

34. A method of manufacturing a semiconductor device according to claim 31 wherein said non-single crystalline semiconductor film comprises silicon and has a thickness of 300 to 1500 Å

.

35. A method of manufacturing a semiconductor device according to claim 31 wherein said heating is continued for 4 hours or longer.

36. A method of manufacturing a semiconductor device according to claim 31 wherein said heating is carried out at a temperature 400-650°

C.

37. A method of manufacturing a semiconductor device according to claim 31 wherein said light has a wavelength of 4 μ

m to 0.5 μ

m.

38. A method of manufacturing a semiconductor device according to claim 31 wherein said light is a laser light.

39. A method of manufacturing a semiconductor device according to claim 31 wherein said irradiating step is carried out in an atmosphere including at least one of a chlorine containing material and a fluorine containing material.

40. A method of manufacturing a semiconductor device comprising the steps of:

forming a non-single crystalline semiconductor film on an insulating surface of a substrate;

disposing a catalyst material in contact with a selected portion of said non-single crystalline semiconductor film, said catalyst material being for promoting crystallization of said semiconductor film;

heating said non-single crystalline semiconductor film so that crystals grow horizontally from said selected portion toward a portion where said catalyst material is not disposed wherein amorphous areas are left between crystals in the semiconductor film;

irradiating said semiconductor island with a light in order to crystallize said amorphous areas remaining after the crystallizing step,

wherein said light has a wavelength of 4 μ

m to 0.5 μ

m.

41. A method of manufacturing a semiconductor device according to claim 40 wherein said catalyst material comprises a metal selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cr, Mn, Cu and Zn.

42. A method of manufacturing a semiconductor device according to claim 40 wherein the irradiation of said light is continued for 10 to 1000 seconds.

43. A method of manufacturing a semiconductor device according to claim 40 wherein said non-single crystalline semiconductor film comprises silicon and has a thickness of 300 to 1500 Å

.

44. A method of manufacturing a semiconductor device according to claim 40 wherein said heating is continued for 4 hours or longer.

45. A method of manufacturing a semiconductor device according to claim 40 wherein said heating is carried out at a temperature 400-650°

C.

46. A method of manufacturing a semiconductor device according to claim 40 wherein said irradiating step is carried out in an atmosphere including at least one of a chlorine containing material and a fluorine containing material.

47. A method of manufacturing a semiconductor device comprising the steps of:

forming a non-single crystalline semiconductor film on an insulating surface of a substrate;

disposing a catalyst material in contact with said non-single crystalline semiconductor film;

crystallizing said non-single crystalline semiconductor film by heating wherein said catalyst material functions to promote the crystallization;

irradiating said semiconductor island with a light having a wavelength of 4 μ

m to 0.5 μ

m in order to further increase the crystallinity of said semiconductor island,

wherein said heating is carried out at a temperature of 400-650°

C. for at least four hours.

48. A method of manufacturing a semiconductor device according to claim 47 wherein said catalyst material comprises a metal selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cr, Mn, Cu and Zn.

49. A method of manufacturing a semiconductor device according to claim 47 wherein the irradiation of said light is continued for 10 to 1000 seconds.