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Method for filling high aspect ratio openings of an integrated circuit to minimize electromigration failure

  • US 6,077,780 A
  • Filed: 12/03/1997
  • Issued: 06/20/2000
  • Est. Priority Date: 12/03/1997
  • Status: Expired due to Term
First Claim
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1. A method for filling, with a conductive material, an opening having a width and a depth within an integrated circuit, said opening abutting a bottom metal line, the method comprising the steps of:

  • A. performing a first deposition of said conductive material by one of electroplating and electroless plating to partially fill the opening with the conductive material;

    B. reflowing the conductive material filled within the opening by heating the conductive material filled within the opening, after said step A of performing said first deposition to partially fill the opening;

    wherein said conductive material partially fills said opening after said step B of reflowing the conductive material within said opening; and

    C. performing a second deposition of said conductive material by one of electroplating and electroless plating to completely fill the opening with the conductive material, after said step B of reflowing the conductive material that partially fills the opening.

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