×

Indium gallium nitride light emitting diode

  • US 6,078,064 A
  • Filed: 05/04/1998
  • Issued: 06/20/2000
  • Est. Priority Date: 05/04/1998
  • Status: Expired due to Term
First Claim
Patent Images

1. A light emitting diode, comprising:

  • a transparent insulating substrate;

    a first conductivity type GaN as a buffer directly over said transparent insulating substrate;

    a first conductivity type (Al)GaN as a lower cladding layer directly over said first conductivity type GaN;

    an InGaN light-emitting layer directly over said first conductivity type (Al)GaN;

    a second conductivity type semiconductor material as a contact layer directly over said InGaN light-emitting layer;

    a second contact layer with a carrier concentration greater than 5*1018 cm-3 and a thickness of less than 500 Angstroms directly over said second conductivity type semiconductor material;

    a transparent conductive layer selected from the group consisting of indium tin oxide (ITO), tin oxide and indium oxide as a current spreading layer for reducing the spreading resistance of the light emitting diode directly over said second contact layer;

    a first electrode formed on the partially exposed area of the first conductivity type GaN; and

    a second electrode formed on top of the transparent conductive layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×