Trench-gated Schottky diode with integral clamping diode

• US 6,078,090 A
• Filed: 04/02/1997
• Issued: 06/20/2000
• Est. Priority Date: 04/02/1997
• Status: Expired due to Term

• Current Assignee: Siliconix Incorporated (Vishay Intertechnology Incorporated)
• Original Assignee: Siliconix Incorporated (Vishay Intertechnology Incorporated)
• Inventors: Malikarjunaswamy, Shekar S., Williams, Richard K., Korec, Jacek, Grabowski, Wayne B.
• Primary Examiner(s): Monin, Jr., Donald L.
• Application Number:
  US08/832,012
• Time in Patent Office: 1,175 Days
• Field of Search: 257/475, 257/471, 257/476, 257/480, 257/481, 257/482, 257/655, 257/656, 257/603, 257/264, 257/483, 257/330, 257/331, 257/334
• US Class Current: 257/476
• CPC Class Codes: H01L 27/0255 using diodes as protective elements
• CPC Class Codes: H01L 27/0727 in combination with diodes, or capacitors or resistors
• CPC Class Codes: H01L 27/095 the components being Schottky barrier gate field-effect transistors
• CPC Class Codes: H01L 29/872 Schottky diodes
• CPC Class Codes: H01L 29/8725 of the trench MOS barrier type [TMBS]

Abstract

A trench-gated Schottky diode of the kind described in U.S. Pat. No. 5,365,102 is provided with an integral clamping diode which protects the gate oxide from damage from high electric fields and hot carrier generation when the device is reverse-biased. The clamping diode is arranged in parallel with the normal current path through the Schottky diode and comprises a PN junction created by a diffusion of opposite conductivity to the semiconductor material of the Schottky diode. In a preferred embodiment, the clamping diode is selected to prevent significant impact ionization near the trenched gate during either steady state- or deep depletion-induced avalanche breakdown.

Claims

1. A trench-gated Schottky barrier diode comprising:

a semiconductor body having first and second trenches formed at a surface thereof, said trenches being separated by a mesa, said mesa being doped with atoms of a first conductivity type;

a metal layer in contact with at least a portion of a surface of said mesa, said metal layer being selected and said mesa being doped such that a rectifying Schottky interface is formed between said metal layer and said surface of said mesa;

a gate electrode disposed within said trenches, said trenches being lined with a dielectric material such that said gate electrode is electrically insulated from said mesa; and

a PN junction clamping diode formed in said semiconductor body, said clamping diode being fabricated in parallel with a current path through said mesa, wherein said PN junction is between a diffusion of a second conductivity type opposite to said first conductivity type and a region of the first conductivity type in said semiconductor body, said diffusion extending to a level deeper than said trenches.

2. The trench-gated Schottky barrier diode of claim 1 wherein said gate electrode is in ohmic contact with said metal layer.

3. The trench-gated Schottky barrier diode of claim 1 wherein said clamping diode has a breakdown voltage which is lower in terms of absolute value than a breakdown voltage of said Schottky interface.

4. The trench-gated Schottky barrier diode of claim 3 wherein the breakdown voltage of said clamping diode is in the range of 80-100 V and the breakdown voltage of said Schottky interface is greater than 100 V.

5. The trench-gated Schottky barrier diode of claim 3 wherein the breakdown voltage of said clamping diode is in the range of 60-80 V and the breakdown voltage of said Schottky interface is greater than 80 V.

6. The trench-gated Schottky barrier diode of claim 3 wherein the breakdown voltage of said clamping diode is in the range of 30-60 V and the breakdown voltage of said Schottky interface is greater than 60 V.

7. The trench-gated Schottky barrier diode of claim 3 wherein the breakdown voltage of said clamping diode is in the range of 60-80 V and said mesa is doped with atoms of said first conductivity type to a concentration of 1·

10¹⁵ cm^-3 to 1·

10¹⁶ cm^-3.

8. The trench-gated Schottky barrier diode of claim 3 wherein the breakdown voltage of said clamping diode is in the range of 30-60 V and said mesa is doped with atoms of said first conductivity type to a concentration of 1·

10¹⁶ cm^-3 to 1·

10¹⁷ cm^-3.

9. The trench-gated Schottky barrier diode of claim 1 wherein said semiconductor body comprises an epitaxial layer overlying a substrate.

10. The trench-gated Schottky barrier diode of claim 9 wherein a net epi layer thickness between said PN junction and said substrate is between 1 and 4 μ

m.

11. The trench-gated Schottky barrier diode of claim 9 wherein a portion of said epitaxial layer below the said diffusion is fully depleted when said clamping diode undergoes avalanche breakdown.

12. The trench-gated Schottky barrier diode of claim 9 wherein a background dopant concentration in the vicinity of said clamping diode is higher than a background dopant concentration in said mesa.

13. The trench-gated Schottky barrier diode of claim 9 wherein said epitaxial layer has a stepped or graded dopant concentration profile and said diffusion penetrates into a region of said epitaxial layer where the dopant concentration is higher than the dopant concentration of said epitaxial layer in the vicinity of a bottom of said trench.

14. The trench-gated Schottky barrier diode of claim 9 further comprising a buried layer of said first conductivity type, said buried layer being located generally beneath said diffusion.

15. The trench-gated Schottky barrier diode of claim 14 wherein said buried layer has a peak dopant concentration at an interface between said epitaxial layer and said substrate.

16. The trench-gated Schottky barrier diode of claim 9 further comprising an implanted or diffused region of said first conductivity type, said implanted or diffused region having a dopant concentration generally higher than a background dopant concentration of said epitaxial layer and extending laterally beyond said diffusion.

24. The trench-gated Schottky barrier diode of claim 1 comprising a plurality of said Schottky interfaces, each of said Schottky interfaces being located in a Schottky cell, and a plurality of said clamping diodes, said clamping diodes being positioned in clamping diode cells at predetermined intervals throughout said Schottky barrier diode.

25. The trench-gated Schottky barrier diode of claim 24 wherein said Schottky cells and said clamping diode cells are in the form of stripes.

26. The trench-gated Schottky barrier diode of claim 24 wherein said Schottky cells and said clamping diode cells are in the form of closed polygons.

27. The trench-gated Schottky barrier diode of claim 24 wherein said Schottky cells are in the form of stripes and said clamping diode cells are in the form of closed polygons.

28. The trench-gated Schottky barrier diode of claim 24 wherein said Schottky cells are in the form of closed polygons and said clamping diode cells are in the form of stripes.

29. The trench-gated Schottky barrier diode of claim 1 wherein said diffusion is located in a junction termination at a periphery of said Schottky barrier diode.

30. The trench-gated Schottky barrier diode of claim 1 wherein said dielectric material comprises an oxide layer.

31. The trench-gated Schottky barrier diode of claim 30 wherein said clamping diode has a breakdown voltage in the range of 4 to 5 MV/cm times a thickness of said oxide layer.

32. The trench-gated Schottky barrier diode of claim 31 wherein said trenches extend into a heavily doped substrate.

33. The trench-gated Schottky barrier diode of claim 31 wherein said trenches extend into a relatively heavily doped portion of an epitaxial layer having a stepped or graded dopant concentration.

34. The trench-gated Schottky barrier diode of claim 1 wherein said metal layer forms an anode of the Schottky barrier diode and wherein a diffused P-type region forms an anode of said clamping diode.

35. The trench-gated Schottky barrier diode of claim 34 wherein said semiconductor body comprises N-type silicon, said N-type silicon forming a cathode of said Schottky barrier diode.

36. The trench-gated Schottky barrier diode of claim 1 wherein said metal layer forms a cathode of the Schottky barrier diode and wherein a diffused N-type region forms an cathode of said clamping diode.

37. The trench-gated Schottky barrier diode of claim 36 wherein said semiconductor body comprises P-type silicon, said P-type silicon forming a cathode of said Schottky barrier diode.

38. The trench-gated Schottky barrier diode of claim 1 wherein said metal layer is in contact with substantially the entire top surface of said mesa.

39. The trench-gated Schottky barrier diode of claim 1 wherein said metal layer is in contact with a portion of the top surface of said mesa.

40. The trench-gated Schottky barrier diode of claim 1 wherein the Schottky barrier height is adjusted by an ion implanted layer of dopant atoms.

41. The trench-gated Schottky barrier diode of claim 1 comprising a barrier adjust implant at said surface of said mesa.

42. The trench-gated Schottky barrier diode of claim 1 wherein said metal layer comprises platinum silicide.

43. The trench-gated Schottky barrier diode of claim 1 wherein said metal layer comprises titanium disilicide.

44. The trench-gated Schottky barrier diode of claim 1 wherein said metal layer makes a non-rectifying contact with said diffusion.

45. The trench-gated Schottky barrier diode of claim 44 wherein said metal layer covers substantially the entire Schottky barrier diode.

46. The trench-gated Schottky barrier diode of claim 1 further comprising a second metal layer overlying said metal layer.

47. The trench-gated Schottky barrier diode of claim 46 wherein said second metal layer is aluminum.

48. The trench-gated Schottky barrier diode of claim 46 wherein said second metal layer is gold.

49. The trench-gated Schottky barrier diode of claim 46 wherein said second metal layer is a sandwich comprising titanium, nickel and silver.

50. The trench-gated Schottky barrier diode of claim 46 wherein said second metal layer is a sandwich comprising titanium, nickel and gold.

57. The trench-gated Schottky barrier diode of claim 1 wherein said gate electrode and said metal layer are formed of the same material.

17. A trench-gated Schottky barrier diode comprising:

a semiconductor body having first and second trenches formed at a surface thereof, said trenches being separated by a mesa, said mesa being doped with atoms of a first conductivity type;

a metal layer in contact with at least a portion of a surface of said mesa, said metal layer being selected and said mesa being doped such that a rectifying Schottky interface is formed between said metal layer and said surface of said mesa;

a gate electrode disposed within said trenches, said trenches being lined with a dielectric material such that said gate electrode is electrically insulated from said mesa; and

a PN junction clamping diode formed in said semiconductor body, said clamping diode being fabricated in parallel with a current path through said mesa, wherein said PN junction is between a diffusion of a second conductivity type opposite to said first conductivity type and a region of the first conductivity type in said semiconductor body, said semiconductor body comprises an epitaxial layer overlying a substrate, and said trenches extend to a level deeper than said diffusion.

18. The trench-gated Schottky barrier diode of claim 17 further comprising a buried layer of said first conductivity type, said buried layer being located generally beneath said diffusion and having a dopant concentration generally higher than a background dopant concentration of said epitaxial layer.

19. The trench-gated Schottky barrier diode of claim 17 further comprising an implanted or diffused region of said first conductivity type, said implanted or diffused region having a dopant concentration generally higher than a background dopant concentration of said epitaxial layer and extending laterally beyond said diffusion.

20. The trench-gated Schottky barrier diode of claim 17 further comprising an implanted or diffused region of said first conductivity type, wherein said implanted or diffused region has a dopant concentration generally higher than a background dopant concentration of said epitaxial layer, and said implanted or diffused region is between two regions of said second conductivity type.

51. The trench-gated Schottky barrier diode of claim 17 further comprising a second metal layer overlying said metal layer.

52. The trench-gated Schottky barrier diode of claim 51 wherein said second metal layer extends laterally beyond said metal layer and makes a non-rectifying contact with said diffusion.

53. The trench-gated Schottky barrier diode of claim 52 wherein said second metal layer is aluminum.

54. The trench-gated Schottky barrier diode of claim 52 wherein said second metal layer is gold.

55. The trench-gated Schottky barrier diode of claim 52 wherein said second metal layer is a sandwich comprising titanium, nickel and silver.

56. The trench-gated Schottky barrier diode of claim 52 wherein said second metal layer is a sandwich comprising titanium, nickel and gold.

21. A trench-gated Schottky barrier diode comprising:

a semiconductor body having first and second trenches formed at a surface thereof, said trenches being separated by a mesa, said mesa being doped with atoms of a first conductivity type;

a metal layer in contact with at least a portion of a surface of said mesa, said metal layer being selected and said mesa being doped such that a rectifying Schottky interface is formed between said metal layer and said surface of said mesa;

a gate electrode disposed within said trenches, said trenches being lined with a dielectric material such that said gate electrode is electrically insulated from said mesa; and

a PN junction clamping diode formed in said semiconductor body, said clamping diode being fabricated in parallel with a current path through said mesa, wherein said PN junction is between a diffusion of a second conductivity type opposite to said first conductivity type and a region of the first conductivity type in said semiconductor body, and said PN junction has a radius of junction curvature where r≦

2 μ

m.

22. The trench-gated Schottky barrier diode of claim 21 wherein said radius of curvature is determined by the depth of said diffusion.

23. The trench-gated Schottky barrier diode of claim 21 wherein said radius of curvature is determined by at least one sharp corner of said diffusion.

58. A trench-gated Schottky barrier diode comprising:

a semiconductor body having first and second trenches formed at a surface thereof, said trenches being separated by a mesa, said mesa being doped with atoms of a first conductivity type;

a metal layer in contact with at least a portion of a surface of said mesa, said metal layer being selected and said mesa being doped such that a rectifying Schottky interface is formed between said metal layer and said surface of said mesa;

a gate electrode disposed within said trenches, said trenches being lined with a dielectric material such that said gate electrode is electrically insulated from said mesa; and

a PN junction clamping diode formed in said semiconductor body, said clamping diode being fabricated in parallel with a current path through said mesa, wherein said metal layer is formed of a first metal and said gate electrode is formed of a second metal different from said first metal.

59. A trench-gated Schottky barrier diode comprising:

a semiconductor body having first and second trenches formed at a surface thereof, said trenches being separated by a mesa, said mesa being doped with atoms of a first conductivity type;

a metal layer in contact with at least a portion of a surface of said mesa, said metal layer being selected and said mesa being doped such that a rectifying Schottky interface is formed between said metal layer and said surface of said mesa;

a gate electrode disposed within said trenches, said trenches being lined with a dielectric material such that said gate electrode is electrically insulated from said mesa; and

a PN junction clamping diode formed in said semiconductor body, said clamping diode being fabricated in parallel with a current path through said mesa, wherein said gate electrode is formed of doped polysilicon.

60. A trench-gated Schottky barrier diode comprising:

a semiconductor body having first and second trenches formed at a surface thereof, said trenches being separated by a mesa, said mesa being doped with atoms of a first conductivity type;

a metal layer in contact with at least a portion of a surface of said mesa, said metal layer being selected and said mesa being doped such that a rectifying Schottky interface is formed between said metal layer and said surface of said mesa;

a gate electrode disposed within said trenches, said trenches being lined with a dielectric material such that said gate electrode is electrically insulated from said mesa; and

a PN junction clamping diode formed in said semiconductor body, said clamping diode being fabricated in parallel with a current path through said mesa, said PN junction formed such that an avalanche breakdown is located away from said trenches.

61. The trench-gated Schottky barrier diode of claim 60 wherein said clamping diode has a breakdown voltage which is lower in terms of absolute value than a breakdown voltage of said Schottky interface.

62. The trench-gated Schottky barrier diode of claim 61 wherein the breakdown voltage of said clamping diode is in the range of 80-100 V and the breakdown voltage of said Schottky interface is greater than 100 V.

63. The trench-gated Schottky barrier diode of claim 61 wherein the breakdown voltage of said clamping diode is in the range of 60-80 V and the breakdown voltage of said Schottky interface is greater than 80 V.

64. The trench-gated Schottky barrier diode of claim 61 wherein the breakdown voltage of said clamping diode is in the range of 30-60 V and the breakdown voltage of said Schottky interface is greater than 60 V.

65. The trench-gated Schottky barrier diode of claim 61 wherein the breakdown voltage of said clamping diode is in the range of 60-80 V and said mesa is doped with atoms of said first conductivity type to a concentration of 1·

10¹⁵ cm^-3 to 1·

10¹⁷ cm^-3.

66. The trench-gated Schottky barrier diode of claim 61 wherein the breakdown voltage of said clamping diode is in the range of 30-60 V and said mesa is doped with atoms of said first conductivity type to a concentration of 1·

10¹⁶ cm^-3 to 1·

10¹⁷ cm^-3.