Field emission device having an amorphous multi-layered structure

• US 6,078,133 A
• Filed: 02/25/1998
• Issued: 06/20/2000
• Est. Priority Date: 03/13/1996
• Status: Expired due to Term

• Current Assignee: Motorola Solutions, Inc.
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Coll, Bernard F., Menu, Eric P., Song, John
• Primary Examiner(s): Patel, Nimeshkumar D.
• Assistant Examiner(s): HOPPER, TODD R
• Application Number:
  US09/028,797
• Time in Patent Office: 846 Days
• Field of Search: 313/309, 313/310, 313/403, 313/409, 313/411, 313/441, 313/491, 313/495, 427/569, 427/78, 427/576, 427/577
• US Class Current: 313/310
• CPC Class Codes: C23C 14/0605 Carbon
• CPC Class Codes: C23C 14/548 Controlling the composition
• CPC Class Codes: C23C 16/342 Boron nitride
• CPC Class Codes: H01J 2201/30457 Diamond
• CPC Class Codes: H01J 2201/319 Circuit elements associated with the emitters by direct integration
• CPC Class Codes: H01J 3/022 with microengineered cathode, e.g. Spindt-type
• CPC Class Codes: H01J 9/025 of field emission cathodes

Abstract

An amorphous multi-layered structure (100, 200) is formed by a method including the steps of: i) positioning a deposition substrate (101) in a physical vapor deposition apparatus, (300, 400, 500) ii) ionizing a precursor of a multi-phase material within the physical vapor deposition apparatus (300, 400, 500) iv) modulating the total ion impinging energy of the ions to deposit layers having predetermined properties corresponding to the total ion impinging energy values.

Claims

1. A field emission device comprising:

a substrate;

a conductive row being disposed on the substrate;

a non-conducting amorphous carbon layer including a layer of hydrogen-free amorphous carbon being non-conductive and being disposed on the substrate/conductive row;

a ballasted emission structure;

a conductive column being formed on the ballasted emission structure; and

an aperture being formed through the conductive column, the ballasted emission structure, and the non-conducting amorphous carbon layer thereby forming an emitter well and thereby exposing an emission edge of the ballasted emission structure being disposed within the emitter well and being emissive when exposed to an electric field having a field strength less than 150 volts/micrometer.

2. A field emission device as claimed in claim 1 wherein the ballasted emission structure includes:

a ballast resistor layer including a layer of hydrogen-free amorphous carbon being non-emissive when exposed to an electric field having a field strength less than 200 volts/micrometer and being disposed on the non-conducting amorphous carbon layer;

an electron emitter layer including a layer of hydrogen-free amorphous carbon being disposed on the ballast resistor layer; and

an emission-control layer including a layer of hydrogen-free amorphous carbon being non-emissive when exposed to an electric field having a field strength less than 200 volts/micrometer and being disposed on the electron emitter layer.

3. A field emission device as claimed in claim 2 wherein the electron emitter layer includes a plurality of layers of hydrogen-free amorphous carbon having thicknesses within a range of 0-100 angstroms so that the electron emitter layer exhibits quantum size effects.

4. A field emission device comprising:

a substrate;

a conductive row being disposed on the substrate;

a ballasted emission structure being formed on the substrate/conductive row;

a non-conducting amorphous carbon layer including a layer of hydrogen-free amorphous carbon being non-conductive and being disposed on the ballasted emission structure;

a conductive column being formed on the non-conducting amorphous carbon layer; and

an aperture being formed through the conductive column and the non-conducting amorphous carbon layer thereby forming an emitter well and thereby exposing an electron emission surface of the ballasted emission structure, the electron emission surface being disposed within the emitter well and being emissive when exposed to an electric field having a field strength less than 150 volts/micrometer.

5. A field emission device as claimed in claim 4 wherein the ballasted emission structure includes:

a ballast resistor layer including a layer of hydrogen-free amorphous carbon being disposed on the substrate/conductive row and having a resistivity providing uniform electron emission over the electron emission surface;

an electron emitter layer including a layer of hydrogen-free amorphous carbon being disposed on the ballast resistor layer;

an emission-control layer including a layer of hydrogen-free amorphous carbon being non-emissive when exposed to an electric field having a field strength less than 200 volts/micrometer and being disposed on the electron emitter layer

wherein the aperture is further formed through the emission-control layer thereby exposing the electron emission surface of the electron emitter layer being emissive when exposed to an electric field having a field strength less than 150 volts/micrometer.