Method of forming films over insulating material

• US 6,080,445 A
• Filed: 02/19/1998
• Issued: 06/27/2000
• Est. Priority Date: 02/20/1997
• Status: Expired due to Fees

• Current Assignee: Citizen Holdings Co., Ltd.
• Original Assignee: Citizen Watch Co Limited (Citizen Electronics Company Limited)
• Inventors: Miya, Yukio, Toida, Takashi, Koike, Ryota, Sugiyama, Osamu
• Primary Examiner(s): King, Roy V.
• Application Number:
  US09/040,243
• Time in Patent Office: 859 Days
• Field of Search: 427/249.7, 427/255.7, 427/902, 427/404, 427/122, 427/249.18, 427/249.19, 427/250, 427/419.7, 428/408
• US Class Current: 427/249.7
• CPC Class Codes: C23C 16/0272 Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• CPC Class Codes: C23C 16/0281 of metallic sub-layers C23C16/029 takes precedence
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: Y10S 427/103 Diamond-like carbon coating, i.e. DLC

Abstract

A method of forming films over an insulating material is provided whereby an underlayer film having electric conductivity is formed on the surface of the insulating material constituting a base member, and a hard carbon film is formed over the underlayer film so that the surface electrical resistance value of the hard carbon film can be controlled so as not to cause the surface thereof to be charged with static electricity by varying an electrical resistance value of the underlayer film. In the case where the underlayer film is formed of a metal film composed of titanium, chromium, tungsten, or the like, the resistance value thereof can be changed by varying the thickness of the metal film. In the case where the underlayer film is formed of a semiconductor film composed of silicon, germanium, or the like, the resistance value thereof can be changed by varying the thickness of the semiconductor film, or the concentration of an impurity added thereto.

Claims

1. A method of forming films over an insulating material comprising steps of:

forming an underlayer film of a metal, a metal carbide, a metal nitride or a semiconductor on a surface of the insulating material; and

forming a diamond-like carbon film over the underlayer film, a surface electrical resistance value of the diamond-like carbon film being controlled by varying an electrical resistance value of the underlayer film.

2. A method of forming films over an insulating material according to claim 1 wherein a metal film is formed as the underlayer film.

3. A method of forming films over an insulating material according to claim 1 wherein a semiconductor film is formed as the underlayer film.

4. A method of forming films over an insulating material according to claim 1 wherein a first underlayer film of a metal film is formed on the surface of the insulating material, and a second underlayer film of a semiconductor film is formed over the first underlayer film, the two films constituting the underlayer film.

5. A method of forming films over an insulating material according to claim 2 wherein the electrical resistance value of the underlayer film is varied by changing the thickness of the metal film.

6. A method of forming films over an insulating material according to claim 3 wherein the electrical resistance value of the underlayer film is varied by changing the thickness of the semiconductor film.

7. A method of forming films over an insulating material according to claim 3 wherein the electrical resistance value of the underlayer film is varied by changing a concentration of an impurity added to the semiconductor film.

8. A method of forming films over an insulating material according to claim 4 wherein the electrical resistance value of the underlayer film is varied by changing at least either of a thickness of the first underlayer film of the metal film or that of the second underlayer film of the semiconductor film.

9. A method of forming films over an insulating material according to claim 4 wherein the electrical resistance value of the underlayer film is varied by changing at least either of a thickness of the first underlayer film of the metal film or concentration of an impurity added to the second underlayer film of the semiconductor film.

10. A method of forming films over an insulating material according to claim 1 wherein the underlayer film is formed of a metal selected from the group consisting of titanium, chromium and tungsten;

or a carbide or a nitride of any metal among said metals.

11. A method of forming films over an insulating material according to claim 3 wherein the semiconductor film as the underlayer film is formed of a material selected from the group consisting of silicon, germanium, and a compound of silicon or germanium.

12. A method of forming films over an insulating material according to claim 4 wherein the first underlayer film of the metal film is formed of a metal selected from the group consisting of titanium, chromium, and tungsten, while the second underlayer film of the semiconductor film is formed of either silicon or germanium.

13. A method of forming films over an insulating material according to claim 1 wherein a first underlayer film of a metal film is formed on the surface of the insulating material, a second underlayer film of a metal film having higher electric conductivity than that of the metal film is formed over the first underlayer film, and a third underlayer film of a semiconductor film is further formed over the second underlayer film, the three films constituting the underlayer film.

14. A method of forming films over an insulating material according to claim 13 wherein the surface electrical resistance value of the underlayer film is changed by varying primarily the thickness of the second underlayer film.

15. A method of forming films over an insulating material according to claim 13 wherein the first underlayer film is formed of a metal selected from the group consisting of titanium, chromium, and tungsten, the second underlayer film is formed of a metal selected from the group consisting of gold, copper, indium, and aluminum, and the third underlayer film is formed of either silicon or germanium.

16. A method of forming films over an insulating material according to claim 1 wherein the insulating material is composed of either glass or ceramic.

17. A method of forming films over an insulating material according to claim 1 wherein the insulating material comprises a jig or tool for handling semiconductor wafers or chips.

18. A method of forming films over an insulating material according to claim 1 wherein the insulating material comprises a jig or tool for handling semiconductor wafers or chips, composed of either glass or ceramic.

19. A method of forming films over an insulating material according to claim 18 wherein a metal film is formed as the underlayer film, the electrical resistance value of the underlayer film being changed by varying the thickness of the metal film.

20. A method of forming films over an insulating material according to claim 18 wherein a semiconductor film is formed as the underlayer film, the electrical resistance value of the underlayer film being changed by varying the thickness of the semiconductor film or a concentration of an impurity added thereto.

21. A method of forming films over an insulating material according to claim 18 wherein a first underlayer film of a metal film is formed on the surface of a transfer arm comprising the insulating material, and a second underlayer film of a semiconductor film is formed over the first underlayer film, the two films constituting the underlayer film, the electrical resistance value of which is changed by varying either the thickness of the first underlayer film of the metal film, or the thickness or a concentration of an impurity of the second underlayer film of the semiconductor film.

22. A method of forming films over an insulating material according to claim 18 wherein a first underlayer film of a metal film is formed on the surface of a transfer arm comprising the insulating material, a second underlayer film of a metal film having higher electric conductivity than that of the metal film is formed over the first underlayer film, and a third underlayer film of a semiconductor film is further formed over the second underlayer film, the three films constituting the underlayer film, the electrical resistance value of which is changed by varying primarily the thickness of the second underlayer film.