Electrophotographic patterning of thin film circuits

• US 6,080,606 A
• Filed: 03/26/1996
• Issued: 06/27/2000
• Est. Priority Date: 03/26/1996
• Status: Expired due to Fees

• Current Assignee: TRUSTEES OF, THE
• Original Assignee: The Trustees of Princeton University (Princeton University)
• Inventors: Wagner, Sigurd Richard, Shen, Dashen, Gleskova, Helena
• Primary Examiner(s): Elms, Richard
• Assistant Examiner(s): LEBENTRITT, MICHAEL
• Application Number:
  US08/621,582
• Time in Patent Office: 1,554 Days
• Field of Search: 257/67, 257/72, 438/151, 438/152, 438/160, 438/586, 430/126
• US Class Current: 438/151
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate

Abstract

Amorphous silicon thin-film transistors on glass foil are made using exclusively electrophotographic printing for pattern formation, contact hole opening, and device isolation. Toner etch masks are applied by feeding the glass substrate through a laser printer or photocopier, or from laser-printed patterns on transfer paper. This all-printed patterning is a low-cost, large-area circuit processing technology, suitable for producing backplanes for active matrix liquid crystal displays.

Claims

1. A method for producing thin film transistors, comprising the steps of:

electrophotographically printing a negative source-drain pattern on a clean substrate in the form of toner, thereby initiating the formation of a stack;

post-baking the toner;

depositing an electrical conductor on the above;

dissolving the toner with a solvent to lift off the portion of the conductor deposited on the toner;

depositing amorphous silicon on top of the stack;

depositing gate insulator on the top and passivation on the bottom of the stack;

depositing photoresist on top of the stack;

applying a negative gate toner pattern to the top of the stack;

exposing the photoresist to ultraviolet light;

developing the photoresist;

depositing an electrical conductor on the top of the stack;

lifting-off the conductor deposited over the toner and photoresist by exposing the stack to a stripper;

applying photoresist to the top of the stack;

applying to the top of the stack a positive toner pattern for contact hole opening and transistor separation;

exposing the photoresist to ultraviolet light;

developing the photoresist;

etching the exposed gate insulator and amorphous silicon; and

stripping the photoresist and toner to obtain the desired thin film transistors.

2. The method of claim 1, wherein the step of applying the negative gate toner is by direct electrophotographic printing on the stack, followed by post-baking the toner.

3. The method of claim 1, wherein the step of applying the positive toner pattern is by direct electrophotographic printing on the stack, followed by post-baking the toner.

4. The method of claim 1, wherein the step of applying the negative gate toner is by electrophotographic printing to transfer paper and then transferring the toner to the stack by contacting it with the transfer paper, providing heat and pressure, and removing the paper to leave the toner on the top of the stack.

5. The method of claim 1, wherein the step of applying the positive toner pattern is by electrophotographic printing to transfer paper and then transferring the toner to the stack by contacting it with the transfer paper, providing heat and pressure, and removing the paper to leave the toner on the top of the stack.

6. The method of claim 1, wherein the electrical conductor is selected from the group consisting of chromium, aluminum, titanium, tungsten, tantalum, and their alloys.

7. The method of claim 1, wherein the substrate includes a flexible insulator.

8. The method of claim 1, wherein the substrate includes glass foil.

9. The method of claim 1, wherein the substrate includes polyimide film.

10. The method of claim 1, wherein the substrate includes a metal foil covered with an electrical insulator.

11. The method of claim 1, wherein the gate insulator is selected from the group consisting of silicon nitride and silicon dioxide.

12. The method of claim 1, wherein the steps of applying the toner use a laser printer.

13. The method of claim 1, wherein the steps of applying the toner use a photocopier.

14. The method of claim 1, wherein the steps of depositing the conductor use thermal evaporation.

15. The method of claim 1, wherein the step of depositing the amorphous silicon uses plasma enhanced chemical vapor deposition.

16. The method of claim 1, wherein the step of depositing the gate insulator uses plasma enhanced chemical vapor deposition.

19. The method of claim 11, wherein said steps of applying dry toner includes the steps of:

direct printing onto toner transfer paper;

transferring the toner pattern onto said sheet material by applying heat and pressure; and

removing said transfer paper.

27. The method of claim 19, wherein said step of direct printing is achieved by a laser printer.

28. The method of claim 19, wherein said step of direct printing is achieved by a photocopier.

17. A method for patterning a sheet material comprising the steps of:

applying dry toner to said sheet material in a configuration forming a toner etch having a desired pattern;

exposing said sheet material with said toner pattern to an etchant for a predetermined period of timer; and

removing said toner from said patterned sheet material.

18. The method of claim 17, wherein said step of applying dry toner consists of direct printing of said toner upon said sheet material.

20. The method of claim 17, wherein prior to said applying step, said sheet material is coated with photoresist, and said method further includes after said applying step the steps of:

exposing the composite of said sheet material, photoresist, and toner to ultraviolet radiation;

developing said photoresist;

exposing the composite of said sheet material, photoresist, and toner to etchant; and

removing said toner and said photoresist from said sheet material.

21. The method of claim 17, wherein said sheet material consists of electrically conductive material.

22. The method of claim 17, wherein said sheet material consists of semiconductor material.

23. The method of claim 17, wherein said sheet material consists of electrically insulative material.

24. The method of claim 17, wherein said sheet material is multilayered.

25. The method of claim 18, wherein said direct printing is achieved using a laser printer.

26. The method of claim 18, wherein said direct printing is achieved using a photocopier.

29. The method of claim 20, wherein said step applying dry toner to said sheet material is achieved by a laser printer.

30. The method of claim 20, wherein said step of applying dry toner to said sheet material is achieved by a photocopier.

31. The method of claim 21, wherein said electrically conductive material is selected from the group consisting of metals, and conductive polymers.

32. The method of claim 22, wherein said sheet material is selected from the group consisting of amorphous silicon, and semiconductors.

33. The method of claim 23, wherein said sheet material is selected from the group consisting of silicon dioxide, silicon nitride, and organic polymers.

34. The method of claim 24, wherein the layers of said multilayered sheet materials include electrical conductors, semiconductors, and electrical insulators in a desired combination.