Method of detecting a polishing endpoint layer of a semiconductor wafer which includes a non-reactive reporting specie
First Claim
1. A method of planarizing a semiconductor wafer having a polishing endpoint layer that includes a sulfur-containing reporting specie, comprising the steps of:
- polishing a first side of said wafer in order to remove material from said wafer;
detecting presence of said sulfur-containing reporting specie in said material removed from said wafer; and
terminating said polishing step in response to detecting presence of said sulfur-containing reporting specie.
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Accused Products
Abstract
A method of planarizing a semiconductor wafer having a polishing endpoint layer that includes a sulfur-containing reporting specie includes the step of polishing a first side of the wafer in order to remove material from the wafer. The method also includes the step of detecting presence of the sulfur-containing reporting specie in the material removed from the wafer. The method further includes the step of terminating the polishing step in response to detecting presence of the sulfur-containing reporting specie. A shallow trench isolation process for fabricating a semiconductor wafer is also disclosed.
70 Citations
20 Claims
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1. A method of planarizing a semiconductor wafer having a polishing endpoint layer that includes a sulfur-containing reporting specie, comprising the steps of:
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polishing a first side of said wafer in order to remove material from said wafer; detecting presence of said sulfur-containing reporting specie in said material removed from said wafer; and terminating said polishing step in response to detecting presence of said sulfur-containing reporting specie. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of planarizing a semiconductor wafer down to a distance from a semiconductor substrate of said wafer, comprising the steps of:
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forming in said wafer a sulfur-containing reporting specie that is at said distance from said substrate of said wafer; polishing a first side of said wafer in order to remove material from said wafer; detecting presence of said sulfur-containing reporting specie in said material removed from said wafer; and terminating said polishing step in response to detection of said sulfur-containing reporting specie. - View Dependent Claims (8, 9, 10, 11)
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12. A shallow trench isolation process for fabricating semiconductor wafer which includes a first insulating layer disposed on a substrate, comprising the steps of:
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forming a trench in said first insulating layer and said substrate; forming a polishing endpoint layer that includes a non-reactive reporting specie; forming a second insulating layer over said first insulating layer, whereby said trench is filled with material of said second insulating layer; polishing a first side of said wafer in order to remove material from said second insulating layer of said wafer; detecting presence of said non-reactive reporting specie; and terminating said polishing step in response to detection of said non-reactive reporting specie, wherein said non-reacting reporting specie includes a carbon-containing reporting specie. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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19. A shallow trench isolation process for fabricating a semiconductor wafer which includes a first insulating layer disposed on a substrate, comprising the steps of:
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forming a trench in said first insulating layer and said substrate; forming a polishing endpoint layer that includes a non-reactive reporting specie; forming a second insulating layer over said first insulating layer, whereby said trench is filled with material of said second insulating layer; polishing a first ide of said wafer in order to remove material from said second insulating layer of said wafer; detecting presence of said non-reactive reporting specie; and terminating said polishing step in response to detection of said non-reactive reporting specie, wherein said non-reacting reporting specie includes a sulfur-containing reporting specie. - View Dependent Claims (20)
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Specification