AlAs oxide insulating layer between a conductive III-V substrate and an optoelectronic semiconductor device and method of manufacturing thereof

• US 6,081,000 A
• Filed: 09/14/1998
• Issued: 06/27/2000
• Est. Priority Date: 09/27/1996
• Status: Expired due to Term

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Siemens AG
• Inventors: Lell, Alfred
• Primary Examiner(s): Jackson, Jr., Jerome
• Assistant Examiner(s): Baumeister, Bradley W.
• Application Number:
  US09/068,573
• Time in Patent Office: 652 Days
• Field of Search: 257/93, 257/506, 257/43, 257/88, 257/102, 257/103, 257/524, 257/613, 257/615, 257/516, 438/22, 438/23, 438/29, 438/34, 438/42, 438/46, 438/47, 438/758, 438/778, 438/779, 438/967
• US Class Current: 257/93
• CPC Class Codes: H01L 27/0605 integrated circuits made of compound material, e.g. AIIIBV

Abstract

An optoelectronic semiconductor device, whereby at least one functional semiconductor structure is arranged on a II-V semiconductor substrate. Inventively, an electrically conductive III-V semiconductor substrate is provided that exhibits a charge carrier concentration of more than 1*10¹⁵ cm^-3. At least one electrically insulating oxide layer is provided between the functional semiconductor structure and the III-V semiconductor substrate.

Claims

1. An optoelectronic semiconductor device, comprising:

a III-V semiconductor substrate;

at least one functional optoelectronic semiconductor structure allocated to a first principal surface of said III-V semiconductor substrate;

said functional semiconductor structure being electrically insulated from a second principal surface said III-V semiconductor substrate lying opposite the first principal surface; and

an AlAs oxide layer arranged between said III-V semiconductor substrate and said functional semiconductor structure.

2. An optoelectronic semiconductor device as claimed in claim 1, wherein said functional semiconductor structure is an MCRW laser structure.

3. An optoelectronic semiconductor device as claimed in claim 1, wherein said functional semiconductor structure is a plurality of photodiode structures that form a photodiode field.

4. An optoelectronic semiconductor device as claimed in claim 1, wherein said at least one functional optoelectronic semiconductor structure is a first monolithically integrated functional semiconductor structure and further comprising:

a second monolithically integrated functional semiconductor structure provided on the electrically conductive III-V semiconductor substrate; and

at least one electrically insulating oxide layer is arranged between each of the functional semiconductor structures and the electrically conductive III-V semiconductor substrate.

5. An optoelectronic semiconductor device according to claim 4, wherein said first and second monolithically integrated functional semiconductor structures are two mutually different kinds.

6. An optoelectronic semiconductor device comprising:

a III-V semiconductor substrate;

at least one functional optoelectronic semiconductor structure allocated to a first principal surface of said III-V semiconductor substrate;

said functional semiconductor structure being electrically insulated from a second principal surface said III-V semiconductor substrate lying opposite the first principal surface;

said III-V semiconductor substrate being electrically conductive; and

at least one electrically insulating oxide layer being provided between the functional

optoelectronic semiconductor structure and the III-V semiconductor substrate;

wherein said III-V semiconductor substrate exhibits a charge carrier concentration of greater than 1*10¹⁵ cm^-3 at approximately 20°

C.

7. An optoelectronic semiconductor device comprising:

a III-V semiconductor substrate;

at least one functional optoelectronic semiconductor structure allocated to a first principal surface of said III-V semiconductor substrate;

said functional semiconductor structure being electrically insulated from a second principal surface said III-V semiconductor substrate lying opposite the first principal surface;

said III-V semiconductor substrate being electrically conductive; and

at least one electrically insulating oxide layer being provided between the functional optoelectronic semiconductor structure and the III-V semiconductor substrate;

wherein said electrically conductive III-V semiconductor substrate exhibits a charge carrier concentration between 1*10¹⁶ cm^-3 and 1*10¹⁹ cm^-3 at approximately 20°

C.

8. A method for the manufacture of an optoelectronic semiconductor device, comprising the method steps:

a) producing an electrically conductive III-V semiconductor substrate;

b) applying or forming an electrically insulating oxide layer on the electrically conductive III-V semiconductor substrate, said step of applying or forming said electrically insulating oxide layer including applying or forming an AlAs oxide layer;

c) applying an active layer system onto the electrically insulating oxide layer; and

d) producing at least two functional semiconductor structures electrically insulated from one another by parting the active layer system down to the electrically insulating oxide layer along parting lines between the functional semiconductor structures.