Semiconductor device
First Claim
Patent Images
1. A semiconductor device including:
- a first wiring extending along a first direction and having a wiring width direction in a second direction perpendicular to the first direction, where stresses are generated inside; and
second wirings which are situated above the first wiring, connected to the first wiring through a contact hole, and affected by the stresses of the first wiring;
said second wirings including end portions which are connected to the first wiring, said end portions of said second wirings being bent in a direction which is parallel to a direction that forms a predetermined angle with respect to the first direction and on a plane including the first direction and the second direction.
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Abstract
A semiconductor device is provided wich includes a first wiring and second wirings in which end portions of the second wirings connected to the first wiring are bent parallel to that forms a predetermined angle with respect to the first direction. The first wiring extends along a first direction and has a wiring width direction in a second direction perpendicular to the first direction, where stresses are generated inside. The second wirings are situated above the first wiring, connected to the first wiring through a contact hole, and affected by the stresses of the first wiring.
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Citations
29 Claims
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1. A semiconductor device including:
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a first wiring extending along a first direction and having a wiring width direction in a second direction perpendicular to the first direction, where stresses are generated inside; and second wirings which are situated above the first wiring, connected to the first wiring through a contact hole, and affected by the stresses of the first wiring; said second wirings including end portions which are connected to the first wiring, said end portions of said second wirings being bent in a direction which is parallel to a direction that forms a predetermined angle with respect to the first direction and on a plane including the first direction and the second direction. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device including:
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a first wiring extending along a first direction and having a wiring width direction and a second direction perpendicular to the first direction, where stresses are generated inside; and second wirings which are situated above the first wiring, connected to end portions of the first wiring through a contact hole, and affected by the stresses of the first wiring; wherein the second wirings include end portions which are bent with respect to the remainder of the second wirings, said end portions being on a plane which is parallel to a plane defined by said first wiring and includes the first direction and the second direction, wherein tip parts of the end portions of the second wirings are connected to the first wiring and are disposed to extend along the first wiring and toward the inside of the first wiring. - View Dependent Claims (6, 7)
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8. A semiconductor device including:
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a first wiring extending along a first direction and having a wiring width which is planarly perpendicular to the first direction; and second wirings which are situated above the first wiring, connected to the first wiring through a contact hole and affected by the stresses of the first wiring; wherein the first wiring has a bent portion formed at a portion of the first wiring; and the second wirings having end portions connected to the first wiring, said end portions being bent parallel to a direction that forms a predetermined angle with respect to the first direction on a plane including the first direction and the second direction. - View Dependent Claims (9, 10, 11, 12, 20, 21)
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13. A semiconductor device including:
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a first wiring extending along a first direction and having a wiring width direction in a second direction perpendicular to the first direction, where stresses are generated inside; and second wirings which are situated above the first wiring, connected to the first wiring through a contact hole, and affected by the stresses of the first wiring wherein the whole of the first wiring is divided into a plurality of wiring parts; and the respective wiring parts of the first wiring are electrically connected by the second wirings to form a predetermined current path extending from one end of the first wiring to the other end, the respective wiring parts of the first wiring having wiring lengths, each wiring length being not more than twenty times that of a corresponding wiring width.
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14. A ferroelectric memory device having a plurality of ferroelectric capacitors, said device including:
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a first wiring, which extends along a first direction and having a wiring width direction in a second direction perpendicular to the first direction, where stresses are generated inside; and second wirings, which are electrically connected to the first wiring and are affected by the stresses of the first wiring, said first wiring and said second wirings constituting the ferroelectric capacitors, wherein the first wiring has narrow wiring width portions formed by chipping portions of a first wiring body, with the exception of end portions that are connected to the second wirings, the wiring width of each of the narrow wiring width portions being narrower than that of remaining wiring width portions except the end portions, and the length of the narrow wiring width portions being shorter than that of the remaining wiring width portions. - View Dependent Claims (15, 16, 17, 18, 19, 24, 25, 28)
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22. A ferroelectric memory device having ferroelectric capacitors including:
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a first wiring which extends along a first direction and having a wiring width direction in a second direction perpendicular to the first direction, where stresses are generated inside; and second wirings which are situated above the first wiring, connected to the first wiring through a contact hole, and affected by the stresses of the first wiring, said first wiring and said second wirings constituting ferroelectric capacitors, said first wiring having through openings that are formed in a first wiring body, said body including end portions which are connected to the second wirings. - View Dependent Claims (23)
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26. A semiconductor device constituting a ferroelectric memory device with a plurality of memory cells comprising transistors and ferroelectric capacitors, wherein:
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the ferroelectric capacitor comprises a first electrode where stresses are generated inside, a second electrode positioned opposite to this first electrode, and a ferroelectric layer positioned between the first and second electrodes; the first electrode having a bent portion formed at its portion. - View Dependent Claims (27)
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29. A semiconductor device constituting a ferroelectric memory device with a plurality of memory cells comprising transistors and ferroelectric capacitors, wherein:
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the ferroelectric capacitor comprises a first electrode that extends along a first direction, where stresses are generated inside, a second electrode positioned opposite to this first electrode, and a ferroelectric layer positioned between the first and second electrodes; the whole of the first electrode being divided into a plurality of electrode parts, and the respective electrode parts being electrically connected to form a predetermined current path extending from one end of the first electrode to the other end.
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Specification