Monolithic filters utilizing thin film bulk acoustic wave devices and minimum passive components for controlling the shape and width of a passband response

• US 6,081,171 A
• Filed: 04/08/1998
• Issued: 06/27/2000
• Est. Priority Date: 04/08/1998
• Status: Expired due to Term

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Nokia Mobile Phones UK Limited (Nokia Corporation)
• Inventors: Ella, Juha
• Primary Examiner(s): Pascal, Robert
• Assistant Examiner(s): Summons, Barbara
• Application Number:
  US09/057,299
• Time in Patent Office: 811 Days
• Field of Search: 333/186-192, 310/321, 310/322, 310/324, 310/334, 310/335, 310/348, 310/366
• US Class Current: 333/189
• CPC Class Codes: H03H 9/0095 using bulk acoustic wave devices
• CPC Class Codes: H03H 9/0547 consisting of a vertical arrangement H03H9/0566 takes precedence
• CPC Class Codes: H03H 9/542 including passive elements H03H9/545 takes precedence
• CPC Class Codes: H03H 9/585 Stacked Crystal Filters [SCF]
• CPC Class Codes: H03H 9/587 Air-gaps
• CPC Class Codes: H03H 9/588 Membranes
• CPC Class Codes: H03H 9/589 Acoustic mirrors
• CPC Class Codes: H03H 9/605 consisting of a ladder configuration

Abstract

There is provided a Multi-pole Bulk Acoustic Wave Resonator-Stacked Crystal Filter (Multi-pole BAWR-SCF) filtering circuit or device. In one embodiment the Multi-pole BAWR-SCF circuit comprises a first pair of ports, a second pair of ports, a first lead that is coupled between a first and a second one of the first pair of ports, and a second lead that is coupled between a first and a second one of the second pair of ports. The Multi-pole BAWR-SCF circuit also comprises at least one BAW resonator that is coupled in series in the first lead, and at least one Stacked Crystal Filter (SCF). The SCF has first and second terminals that are coupled in the first lead, and a third terminal that is coupled in the second lead. The Multi-pole BAWR-SCF circuit further comprises a plurality of impedance inverting elements and at least one inductive element. Each individual one of the impedance inverting elements is coupled across the first and second leads, and the at least one inductive element is coupled in parallel with the at least one BAW resonator. The Multi-pole BAWR-SCF circuit yields improved frequency response characteristics relative to those that are typically yielded by at least some conventional multi-pole filters, and includes a reduced number of passive components relative to the number of such components included in at least some conventional multi-pole filters.

Claims

1. A Multi-pole Bulk Acoustic Wave (BAW) filter, comprising:

a first pair of ports;

a second pair of ports;

a first lead coupled between a first and a second one of said first pair of ports;

a second lead coupled between a first and a second one of said second pair of ports;

at least one BAW resonator coupled in series in said first lead;

at least a first Stacked Crystal Filter (SCF), said first SCF having first and second terminals coupled in said first lead, said first SCF also having a third terminal coupled in said second lead;

a plurality of impedance inverting elements, each individual one of said plurality of impedance inverting elements being coupled across said first and second leads; and

at least one inductive element, said at least one inductive element being coupled in parallel with said at least one BAW resonator, wherein said Multi-pole BAW filter yields a passband response having a center frequency f_c.

2. A Multi-pole BAW filter as set forth in claim 1, wherein said at least one BAW resonator includes a first BAW resonator and a second BAW resonator, said impedance inverting elements include a first impedance inverting element and a second impedance inverting element, and said at least one inductive element includes a first inductive element and a second inductive element, wherein each of said first BAW resonator and said first impedance inverting element has a respective first terminal coupled to said first port of said first pair of ports, said first BAW resonator also having a second terminal coupled to said first terminal of said first SCF, said second BAW resonator having a first terminal coupled to said second terminal of said first SCF, said second BAW resonator also having a second terminal coupled to said second port of said first pair of ports, said second impedance inverting element having a first terminal coupled to said second port of said first pair of ports, said first inductive element being connected in parallel with said first BAW resonator, and wherein said second inductive element is connected in parallel with said second BAW resonator.

3. A Multi-pole BAW filter as set forth in claim 2, wherein said first inductive element has a first end coupled to said first port of said first pair of ports, said first inductive element also having a second end coupled in said first lead between said second terminal of said first BAW resonator and said first terminal of said first SCF, said second inductive element having a respective first end coupled in said first lead between said second terminal of said first SCF and said first terminal of said second BAW resonator, said second inductive element also having a respective second end coupled to said second port of said first pair of ports, wherein said first impedance inverting element has a second terminal coupled to said first one of said second pair of ports, and wherein said second impedance inverting element has a second terminal coupled to said second one of said second pair of ports.

4. A Multi-pole BAW filter as set forth in claim 2, wherein said first SCF has equivalent parallel capacitances which function as further impedance inverting elements.

5. A Multi-pole BAW filter as set forth in claim 1, wherein said first terminal of said first SCF is coupled to said first port of said first pair of ports, said third terminal of said first SCF is coupled to a first node in said second lead, said second terminal of said first SCF is coupled to a first terminal of said at least one BAW resonator, wherein said Multi-pole BAW filter further comprises a second SCF, said second SCF having a first terminal coupled to a second terminal of said at least one BAW resonator, said second SCF having a second terminal coupled to said second port of said first pair of ports, said second SCF also having a third terminal coupled to a second node in said second lead, wherein said at least one impedance inverting element includes a first impedance inverting element and a second impedance inverting element, said first impedance inverting element having a first terminal coupled in said first lead between said second terminal of said first SCF and said first terminal of said at least one BAW resonator, said second impedance inverting element having a first terminal coupled in said first lead between said second terminal of said at least one BAW resonator and said first terminal of said second SCF.

6. A Multi-pole BAW filter as set forth in claim 5, wherein said at least one inductive element has a first end coupled in said first lead between said second terminal of said first SCF and said first terminal of said at least one BAW resonator, said at least one inductive element also having a second end coupled in said first lead between said second terminal of said at least one BAW resonator and said first terminal of said second SCF, wherein said first impedance inverting element has a second terminal coupled to a third node in said second lead, said third node being interposed between said first and second nodes, and wherein said second impedance inverting element has a second terminal coupled in said second lead between said third node and said second node.

7. A Multi-pole BAW filter as set forth in claim 5, wherein each of said first and second SCFs have equivalent parallel capacitances which function as further impedance inverting elements.

8. A Multi-pole BAW filter as set forth in claim 1, wherein said first SCF is tuned to yield a second harmonic resonance at a frequency which is approximately equal to said center frequency f_c.

9. A Multi-pole BAW filter as set forth in claim 1, wherein each of said at least one BAW resonator and said first SCF includes an acoustic mirror structure.

10. A Multi-pole BAW filter as set forth in claim 1, wherein said first SCF has equivalent parallel capacitances which function as impedance inverting components.

11. A Multi-pole BAW filter as set forth in claim 1, wherein said at least one inductive element yields a resonance at the center frequency f_c of the Multi-pole BAW filter, and functions to cause the passband response to have an increased bandwidth relative to a passband bandwidth of a filter that does not include the at least one inductive element.

12. A Multi-pole BAW filter as set forth in claim 1, wherein each of said plurality of impedance inverting elements includes a capacitor.

13. A Bulk Acoustic Wave (BAW) filter, comprising:

a first substrate;

a first conductive layer disposed on said first substrate;

a first contact pad disposed on said first substrate;

a second contact pad disposed on said first substrate;

at least one BAW resonator disposed on said first substrate, said at least one BAW resonator being serially coupled between said first and second contact pads;

at least one Stacked Crystal Filter (SCF) disposed on said first substrate, said at least one SCF being serially coupled between said first and second contact pads, said at least one SCF having a first terminal coupled to said first conductive layer;

a second substrate;

a second conductive layer disposed on said second substrate and being coupled to said first conductive layer;

at least one inductor disposed on said second substrate, said at least one inductor being coupled in parallel with said at least one BAW resonator; and

at least one impedance inverting element disposed on said second substrate, said at least one impedance inverting element having a first terminal serially coupled between said first and second contact pads, said at least one impedance inverting element also having a second terminal coupled to said second conductive layer.

14. A BAW filter as set forth in claim 13, wherein said second substrate is disposed over said first substrate.

15. A BAW filter as set forth in claim 13, wherein said at least one BAW resonator includes a first BAW resonator and a second BAW resonator, said at least one impedance inverting element includes a first impedance inverting element and a second impedance inverting element, and said at least one inductor includes a first inductor and a second inductor, wherein each of said first BAW resonator and said first impedance inverting element has a respective first terminal coupled to said first contact pad, said first BAW resonator also having a second terminal coupled to a second terminal of said at least one SCF, said second BAW resonator having a first terminal coupled to a third terminal of said at least one SCF, said second BAW resonator also having a second terminal coupled to said second contact pad, said second impedance inverting element having a first terminal coupled to said second contact pad, said first inductor being connected in parallel with said first BAW resonator, and wherein said second inductor is connected in parallel with said second BAW resonator.

16. A BAW filter as set forth in claim 15, wherein at least a portion of the first inductor is situated above said first BAW resonator, and at least a portion of the second inductor is situated above said second BAW resonator.

17. A BAW filter as set forth in claim 16, wherein the first impedance inverting element is disposed in a plane that is above a plane in which said first BAW resonator is disposed, and the second impedance inverting element is disposed in a plane that is above a plane in which said second BAW resonator is disposed.

18. A BAW filter as set forth in claim 13, wherein said first conductive layer at least partially surrounds said first contact pad, said second contact pad, said at least one BAW resonator, and said at least one SCF.

19. A BAW filter as set forth in claim 13, wherein said second conductive layer at least partially surrounds said at least one inductor and said at least one impedance inverting element.

20. A BAW filter as set forth in claim 13, wherein said first and second conductive layers and said first and second substrates prevent environmental contaminants from coming into contact with said at least one BAW resonator, said at least one SCF, said first and second contact pads, said at least one inductor, and said at least one impedance inverting element.

21. A BAW filter as set forth in claim 13, wherein said at least one inductor is coupled to said at least one BAW resonator through solder bumps.

22. A BAW filter as set forth in claim 13, wherein at least one of said first and second substrates comprises one of Si, GaAs, glass, or a ceramic material.

23. A BAW filter as set forth in claim 13, wherein said at least one impedance inverting element includes a capacitor.

24. A BAW filter as set forth in claim 13, and further comprising a plurality of electrically conductive contacts coupled to said second conductive layer, said plurality of contacts for coupling said second conductive layer to ground, and wherein said first and second contact pads are for being coupled to external circuitry.

25. A BAW filter as set forth in claim 13, wherein the at least one inductor includes a spiral coil.

26. A Multi-pole Bulk Acoustic Wave (BAW) filter, comprising:

a first pair of ports;

a second pair of ports;

at least one BAW resonator coupled between said first pair of ports;

at least one Stacked Crystal Filter (SCF) coupled between said first pair of ports, said at least one SCF having a terminal coupled between said second pair of ports, said at least one SCF also having at least one lumped element equivalent component;

at least one impedance inversion means, each of said at least one impedance inversion means having a first end coupled between said first pair of ports and a second end coupled between said second pair of ports; and

at least one tuning element, said at least one tuning element being coupled in parallel with said at least one BAW resonator, said at least one tuning element yielding a resonance at approximately a center frequency f_c of the Multi-pole BAW filter for causing a passband of the Multi-pole BAW filter to have an increased bandwidth relative to a passband bandwidth of another filter that does not include the at least one tuning element;

wherein said at least one lumped element equivalent component and said at least one impedance inversion means function to transform a terminating impedance of said Multi-pole (BAW) filter from a first impedance to a second impedance.

27. A Multi-pole BAW filter as set forth in claim 26, wherein the Multi-pole BAW filter includes a reduced number of impedance inversion means and tuning elements relative to the number of such components included in the another filter.

28. A Bulk Acoustic Wave (BAW) filter, comprising:

a first substrate;

a first conductive layer disposed on said first substrate;

a plurality of inductors disposed on said first substrate, each of said inductors having respective first and second terminal ends; and

a plurality of impedance inverting elements disposed on said first substrate, each of said impedance inverting elements having respective first and second terminals, wherein the first terminal of each respective one of the impedance inverting elements is coupled to the first terminal end of a respective one of the inductors, and wherein the second terminal of each impedance inverting element is coupled to the first conductive layer, and further comprising,

a second substrate;

a second conductive layer disposed on said second substrate;

a plurality of contact pads disposed on said second substrate;

a plurality of BAW resonators disposed on said second substrate, each of said BAW resonators being serially coupled between said contact pads, each of said BAW resonators also being coupled to the second terminal end of a respective one of said inductors; and

at least one Stacked Crystal Filter (SCF) disposed on said second substrate, said at least one SCF being serially coupled between said contact pads, said at least one SCF also having a first terminal coupled to said second conductive layer, wherein individual ones of the contact pads are coupled to the first terminal of a respective one of the impedance inverting elements and to the first terminal end of a respective one of the inductors.

29. A Bulk Acoustic Wave (BAW) filter as set forth in claim 28, and further comprising:

a first plurality of electrical contacts, individual ones of said first plurality of electrical contacts being coupled to the second terminal end of respective ones of the inductors;

a second plurality of electrical contacts, individual ones of said second plurality of electrical contacts being coupled to the first terminal end of a respective one of the inductors and to the first terminal of a respective one of the impedance inverting elements; and

a third plurality of electrical contacts, individual ones of said third plurality of electrical contacts being coupled to said first conductive layer.

30. A Bulk Acoustic Wave (BAW) filter as set forth in claim 28, and further comprising:

a first plurality of electrical contacts, each of said first plurality of electrical contacts being coupled between the second terminal end a respective one of the inductors and a respective one of said BAW resonators;

a second plurality of electrical contacts, each of said second plurality of electrical contacts coupling the first terminal end of a respective one of the inductors and the first terminal of a respective one of the impedance inverting elements, to a respective one of the contact pads; and

a third plurality of electrical contacts, individual ones of said third plurality of electrical contacts being coupled to said first conductive layer for being coupled to ground.

31. A Bulk Acoustic Wave (BAW) filter as set forth in claim 30, wherein the first plurality of electrical contacts have greater thicknesses than thicknesses of the BAW resonators.

32. A Bulk Acoustic Wave (BAW) filter as set forth in claim 30, wherein individual ones of the inductors are situated above the respective ones of the BAW resonators to which the inductors are coupled.