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Semiconductor light emitting device with high light emission efficiency

  • US 6,081,540 A
  • Filed: 12/18/1997
  • Issued: 06/27/2000
  • Est. Priority Date: 12/20/1996
  • Status: Expired due to Term
First Claim
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1. A semiconductor light emitting device in which a light emitting layer that emits light of wavelengths which are not substantially absorbed by a semiconductor substrate is formed on the semiconductor substrate in a state of lattice mismatching with the semiconductor substrate, characterized in thata semiconductor material used as a base material of the light emitting layer is doped with at least one impurity serving as a radiative recombination center.

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