Semiconductor light emitting device with high light emission efficiency
First Claim
1. A semiconductor light emitting device in which a light emitting layer that emits light of wavelengths which are not substantially absorbed by a semiconductor substrate is formed on the semiconductor substrate in a state of lattice mismatching with the semiconductor substrate, characterized in thata semiconductor material used as a base material of the light emitting layer is doped with at least one impurity serving as a radiative recombination center.
2 Assignments
0 Petitions
Accused Products
Abstract
The invention provides a semiconductor light emitting device in which a light emitting layer is formed on a semiconductor substrate in a state of lattice mismatching with this semiconductor substrate, and by which light emission of high efficiency is obtained. A semiconductor material used as a base material of the light emitting layer is doped with impurities serving as radiative recombination centers. The semiconductor substrate is a GaP substrate and the semiconductor material as the base material of the light emitting layer is (Alx Ga1-x)1-y Iny P. This (Alx Ga1-x)1-y Iny P material is doped with nitrogen, oxygen, selenium, sulfur or tellurium as a first impurity for forming a donor level, and also with magnesium, zinc or cadmium as a second impurity for forming an acceptor level.
34 Citations
20 Claims
-
1. A semiconductor light emitting device in which a light emitting layer that emits light of wavelengths which are not substantially absorbed by a semiconductor substrate is formed on the semiconductor substrate in a state of lattice mismatching with the semiconductor substrate, characterized in that
a semiconductor material used as a base material of the light emitting layer is doped with at least one impurity serving as a radiative recombination center.
-
8. A semiconductor light emitting device in which a light emitting layer including an AlGaInP material as a base material is grown on a GaP substrate in a state of lattice mismatching with the GaP substrate, characterized in that
the AlGaInP material used as the base material of the light emitting layer is doped with nitrogen, oxygen, selenium, sulfur or tellurium as a first impurity for forming a donor level, and magnesium, zinc or cadmium as a second impurity for forming an acceptor level.
-
11. A semiconductor light emitting device, comprising:
-
a semiconductor substrate; and a light emitting layer formed on said semiconductor substrate, said semiconductor substrate being substantially transparent to light emitted by said light emitting layer, and said semiconductor substrate and said light emitting layer having non-matching lattice constants, wherein a semiconductor material of said light emitting layer is doped with at least one impurity that provides a radiation recombination center at an energy level spaced from the conduction band or the valence band of the semiconductor material of said light emitting layer. - View Dependent Claims (12, 13, 14)
-
-
15. A semiconductor light emitting device, comprising:
-
a semiconductor substrate; and a light emitting layer formed on said semiconductor substrate, said semiconductor substrate being substantially transparent to light emitted by said light emitting layer, and said semiconductor substrate and said light emitting layer having non-matching lattice constants, wherein a semiconductor material of said light emitting layer is doped with a first impurity that provides a radiation recombination center at an energy level spaced from the conduction band of the semiconductor material of said light emitting layer and a second impurity that provides a radiation recombination center at an energy level spaced from the valence band of the semiconductor material of said light emitting layer. - View Dependent Claims (16, 17, 18, 19, 20)
-
Specification