Comparing aerial image to actual photoresist pattern for masking process characterization

• US 6,081,659 A
• Filed: 04/26/1999
• Issued: 06/27/2000
• Est. Priority Date: 05/08/1997
• Status: Expired due to Term

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: LSI Logic Corporation (Broadcom, Inc.)
• Inventors: Garza, Mario, Chao, Keith K.
• Primary Examiner(s): Teska, Kevin J.
• Assistant Examiner(s): Kik, Phallaka
• Application Number:
  US09/299,967
• Time in Patent Office: 428 Days
• Field of Search: 395/500.02-500.22, 395/500.34-500.35, 356/237, 382/144, 340/5, 340/30, 378/35, 438/7, 438/16, 364/468.15-468.17, 364/468.28, 700/108-110, 700/120-121, 430/5, 430/30
• US Class Current: 716/52
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Abstract

A method of simulating a masking process in which a process simulator is used to produce an aerial image. The simulator is configured to receive input information. The input information includes a digital representation of a patterned mask and a data set. Each element of the data set corresponds to one of a plurality of parameters associated with the masking process. The simulator is configured to produce an aerial image based upon the input information. The aerial image represents the simulator estimation of a pattern that would be produced by the masking process using the patterned mask under conditions specified by the data set. The method further includes the step of supplying the input information to the simulator to produce the aerial image. A first data base is then generated from the aerial image. The first data base is a digital representation of the aerial image. Thereafter, the pattern is produced on a semiconductor substrate using the masking process and the patterned mask. The pattern is produced under the conditions specified by the data set. A second data base is then generated wherein the second data base is a digital representation of the actual pattern. The first data base and the second data base are then compared to produce an error data base. The error data base is indicative of differences between the aerial image and the pattern. Thereafter, the process simulator is modified based upon the error data base to minimize the differences between a successive iteration of the aerial image and the pattern.

Claims

1. In the field of semiconductor processing, a method of simulating a photoresist process, comprising:

supplying a first database comprising a digital representation of an aerial image of an estimated photoresist pattern, wherein said aerial image was produced by a process simulator simulation of a photoresist process using a patterned mask under conditions specified by a data set, wherein each element of said data set corresponds to one of a plurality of parameters associated with said photoresist process;

supplying a second database comprising a digital representation of an actual photoresist pattern, wherein said actual photoresist pattern was produced by a process using said photoresist process and said patterned mask under the conditions specified by said data set;

comparing said first database with said second database to produce an error database indicative of differences between said aerial image and said actual photoresist pattern; and

modifying said process simulator based upon said error database to minimize said differences between a successive iteration of said aerial image and said photoresist pattern.

2. The method of claim 1, wherein said process simulator comprises a computer, said computer including:

a storage device, wherein said storage device is configured with computer instructions designed to generate, upon execution, said aerial image from said patterned mask and said data set;

an input device for receiving said patterned mask and said data set and for storing said patterned mask and said data set in said storage device; and

a processor coupled to said input device and said storage device, for executing said computer instructions and storing said aerial image in said storage device.

3. The method of claim 2, wherein said input device comprises a disk drive configured to receive a disk including a digital representation of said patterned mask and said data set.

4. The method of claim 2, wherein said computer further includes:

an output device for providing either a hard copy or a digital representation of said aerial image.

5. The method of claim 1, wherein said plurality of parameters associated with said photoresist process include parameters selected from the group consisting of at least one of:

resist contrast (γ

), resist thickness, resist sensitivity, resist solids content, resist viscosity, soft bake temperature, soft bake duration, exposure intensity, exposure duration, source wavelength, source coherency, develop time, developer concentration, developer temperature, developer agitation method, post-bake temperature, and post-bake time.

6. The method of claim 1, wherein said supplying said second database comprises:

scanning said actual photoresist pattern with a scanning electron microscope to produce a scanned image; and

digitizing said scanned image to produce said second database.

7. The method of claim 1, wherein said aerial image includes an alignment mark and said actual photoresist pattern includes a corresponding alignment mark and wherein said comparing said first database with said second database is facilitated by superimposing said alignment mark of said aerial image with said corresponding alignment mark of said actual photoresist pattern.

8. The method of claim 1, wherein said patterned mask comprises features distorted by an optimal proximity correction routine.

9. In the field of semiconductor processing, a method of simulating a photoresist process, comprising:

supplying an aerial image from a process simulator of an estimated photoresist pattern that would be produced by a photoresist process using a patterned mask under conditions specified by a data set, wherein each element of said data set corresponds to one of a plurality of parameters associated with said photoresist process;

generating a first database comprising a digital representation of said aerial image;

supplying an actual photoresist pattern, wherein said actual photoresist pattern was produced by a process using said photoresist process and said patterned mask under the conditions specified by said data set;

generating a second database comprising a digital representation of said actual photoresist pattern;

comparing said first database with said second database to produce an error database indicative of differences between said aerial image and said actual photoresist pattern; and

modifying said process simulator based upon said error database to minimize said differences between a successive iteration of said aerial image and said photoresist pattern.

10. The method of claim 9, wherein said plurality of parameters associated with said photoresist process include parameters selected from the group consisting of at least one of:

resist contrast (γ

), resist thickness, resist sensitivity, resist solids content, resist viscosity, soft bake temperature, soft bake duration, exposure intensity, exposure duration, source wavelength, source coherency, develop time, developer concentration, developer temperature, developer agitation method, post-bake temperature, and post-bake time.

11. The method of claim 9, wherein said generating said second database comprises:

scanning said actual photoresist pattern with a scanning electron microscope to produce a scanned image; and

digitizing said scanned image to produce said second database.

12. The method of claim 9, wherein said aerial image includes an alignment mark and said actual photoresist pattern includes a corresponding alignment mark and wherein said comparing said first database with said second database is facilitated by superimposing said alignment mark of said aerial image with said corresponding alignment mark of said actual photoresist pattern.

13. The method of claim 9, wherein said patterned mask comprises features distorted by an optimal proximity correction routine.