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Pressure sensor cavity etched with hot POCL.sub.3 gas

  • US 6,082,199 A
  • Filed: 03/26/1999
  • Issued: 07/04/2000
  • Est. Priority Date: 02/28/1995
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a capacitance pressure sensor, comprising:

  • forming a first pressure sensor substrate of sapphire with a first flat polished mating surface;

    etching the first pressure sensor substrate to form a cavity;

    providing a first capacitor plate on the first pressure sensor substrate;

    forming a second pressure sensor substrate of sapphire with a second capacitor plate and with a second flat polished mating surface;

    heating the first and second pressure sensor substrates; and

    mating the flat polished mating surfaces of the first and second pressure sensor substrates to form a fusion bond,wherein the etching is done with hot POCl3 gas.

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