Gettering technique for silicon-on-insulator wafers
First Claim
1. A wafer comprising:
- a substrate;
a cleaved semiconductor layer disposed on the substrate, the semiconductor layer having a top surface, the semiconductor layer being bonded to the substrate to form a multilayered substrate structure; and
a gettering layer disposed between the substrate and the top surface of the semiconductor layer wherein the gettering layer provides trapping sites for a plurality of mobile impurity species;
wherein the gettering layer comprises microbubbles or precipitates to trap a portion of said mobile impurity species.
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Abstract
A gettering layer in a silicon-on-insulator wafer. The gettering layer may be formed by implanting gas-forming particles or precipitate-forming particles beneath the active region of the silicon layer and thermally treating the gas-forming ions to produce microbubbles or precipitates within the silicon layer. The microbubbles an/or precipitates create trapping sites for mobile impurity species, thus gettering the impurities. In another embodiment, a polysilicon layer is formed on a donor silicon wafer prior to separating a thin layer of silicon from the donor wafer. The thin layer of silicon is bonded to a backing wafer, the polysilicon layer provides a gettering layer between the active silicon and the backing wafer.
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Citations
26 Claims
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1. A wafer comprising:
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a substrate; a cleaved semiconductor layer disposed on the substrate, the semiconductor layer having a top surface, the semiconductor layer being bonded to the substrate to form a multilayered substrate structure; and a gettering layer disposed between the substrate and the top surface of the semiconductor layer wherein the gettering layer provides trapping sites for a plurality of mobile impurity species; wherein the gettering layer comprises microbubbles or precipitates to trap a portion of said mobile impurity species. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A wafer comprising:
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a first region of cleaved semiconductor material; a second region of semiconductor material having a top surface; an insulative layer disposed between the first region of semiconductor material and the second region of semiconductor material, the insulating layer being bonded to the first region of semiconductor material; and a gettering layer disposed within the second region of semiconductor material between the top surface and the insulative layer; wherein the gettering layer comprises microbubbles or precipitates. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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22. A semiconductor device comprising:
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an active region comprising a cleaved substrate region; an insulative layer bonded to the active region; and a first gettering layer disposed between the active region and the insulative layer; and a second gettering layer of microbubbles disposed between the active region and the first gettering layer. - View Dependent Claims (23, 24)
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25. A semiconductor-on-insulator wafer comprising:
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a cleaved semiconductor layer; an insulating layer disposed adjacent to and bonded to the semiconductor layer; and a gettering layer disposed below the insulating layer; wherein the gettering layer comprises microbubbles or precipitates to trap mobile ions from the semiconductor layer.
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26. A semiconductor-on-insulator wafer comprising:
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a semiconductor layer; an insulating region disposed adjacent to and bonded to the semiconductor layer such that impurities from the semiconductor layer are gettered by the insulating region; wherein the insulating region comprises microbubbles or precipitates to trap mobile impurities from the semiconductor layer.
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Specification