Method and apparatus for the generation of charged carriers in semiconductor devices

• US 6,084,173 A
• Filed: 07/30/1997
• Issued: 07/04/2000
• Est. Priority Date: 07/30/1997
• Status: Expired due to Term

• Current Assignee: Charles Stark Draper Laboratory Incorporated
• Original Assignee: Robert Stephen Dimatteo
• Inventors: DiMatteo, Robert Stephen
• Primary Examiner(s): Gorgos, Kathryn
• Assistant Examiner(s): Parsons, Thomas H.
• Application Number:
  US08/902,817
• Time in Patent Office: 1,070 Days
• Field of Search: 136/223, 136/200, 136/201, 136/203, 136/205, 136/253
• US Class Current: 136/201
• CPC Class Codes: H02S 10/30 Thermophotovoltaic systems photovoltaic cells specially adapted for conversion or sensing of infrared [IR] radiation H01L31/00; thermoelectric devices H10N10/00
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A technique for enhancing the generation of carriers (ex. electrons and/or holes) in semiconductor devices such as photovoltaic cells and the like, receiving radiation from a heated surface, through the use of micron juxtaposition of the surface of the device and the heated surface and with the gap thereinbetween preferably evacuated.

Claims

1. A method of enhancing the generation of electrical currents in a conductive or semi-conductive surface receiving radiation from a heated surface, that comprises, emitting radiation from a heated surface of temperature T_H ;

coupling the radiation through an evacuated gap for reception by a relatively cool conductive or semi-conductive surface maintained at temperature T_C, where T_H >

T_C ; and

adjusting the spacing of the gap to the order of submicrons/microns to achieve an enhanced increase in the relatively cool surface generation of electrical currents in response to the radiation coupled through the gap.

2. A method as claimed in claim 1 wherein the gap spacing is adjusted to the order of from about 0.01 to 100 microns.

3. A method as claimed in claim 1 wherein a semiconductor surface is provided with photovoltaic properties, and maintained relatively cool with respect to the heated surface.

4. A method as claimed in claim 3 wherein each of the photovoltaic and heated surfaces are formed as substantially planar surfaces, placed in juxtaposition substantially in parallel.

5. A method as claimed in claim 4 wherein, prior to the juxtaposition placing, a step is performed of patterning one or both of the juxtaposed surfaces.

6. A method as claimed in claim 4 wherein, prior to the juxtaposition placing, a step is performed of varying the properties of one or more of the surfaces in dimensions orthogonal to and parallel to said spacing.

7. The method as claimed in claim 1 wherein, prior to said emitting of radiation and said adjusting, a step is performed of providing said semiconductor surface with photovoltaic properties.

8. The method claimed in claim 1 wherein the magnitude of the electrical currents generated is controlled by the adjustment of the gap.

9. The method of claim 8 wherein the energy enhancement achieved by the submicron/micron gap adjustment creates energy stimulation that is converted into the enhanced generation of the electrical currents.

10. The method of claim 9 wherein the relatively cool surface is a photovoltaic surface and the enhanced generation of the electrical currents manifests itself in the power output of the photovoltaic surface.

11. A method of enhancing the generation of carriers in a semiconductor surface receiving radiation from a heated surface, that comprises emitting radiation from a heated surface of temperature T_H, coupling the radiation through an evacuated gap for reception by a relatively cool semiconductor surface maintained at temperature T_C, where T_H >

T_C ; and

adjusting the spacing of the gap to the order of submicrons/microns to achieve an enhanced increase in the semiconductor generation of charged carriers in response to the radiation coupled through the gap, wherein one or both of the heated and semiconductor surfaces is formed for tailoring the spectrum of the emitted radiation coupled through the gap.

12. The method as claimed in claim 11, wherein the forming is provided along one or more of the X, Y and Z axes of either or both surfaces.

13. The method as claimed in claim 11 wherein, prior to said adjusting, providing either or both of the surfaces with one of patterns, channels, islands and three-dimensional forms.

14. A method of enhancing the generation of carriers in a semiconductor surface receiving radiation from a heated surface, that comprises, emitting radiation from a heated surface of temperature T_H, coupling the radiation through an evacuated gap for reception by a relatively cool semiconductor surface maintained at temperature T_C, where T_H >

T_C ; and

adjusting the spacing of the gap to the order of submicrons/microns to achieve an enhanced increase in the semiconductor generation of charged carriers in response to the radiation coupled through the gap, wherein the submicron/micron spacing is adjusted by controlling the leveling of the surfaces.

15. A method of enhancing the generation of carriers in a semiconductor surface receiving radiation from a heated surface, that comprises, emitting radiation from a heated surface of temperature T_H, coupling the radiation through an evacuated gap for reception by a relatively cool semiconductor surface maintained at temperature T_C, where T_H >

T_C ; and

adjusting the spacing of the gap to the order of submicrons/microns to achieve an enhanced increase in the semiconductor generation of charged carriers in response to the radiation coupled through the gap, wherein the gap is isolated from vibration.