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Front contact trenches for polycrystalline photovoltaic devices and semi-conductor devices with buried contacts

  • US 6,084,175 A
  • Filed: 11/14/1995
  • Issued: 07/04/2000
  • Est. Priority Date: 05/20/1993
  • Status: Expired due to Term
First Claim
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1. A semi-conductor device, comprising:

  • a semi-conductor body having a textured surface defining an array of peaks and valleys;

    a channel disposed in said textured surface and extending through a multitude of said peaks to a depth in proximity to said valleys;

    a groove extending below said channel beneath said textured surface and said groove having a width narrower than said channel;

    a metal conductive layer positioned in said groove; and

    said metal conductive layer and said groove cooperating with each other to form a conductive buried contact substantially in the absence of zig-zag metallization of varying depths in said groove and channel.

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