Front contact trenches for polycrystalline photovoltaic devices and semi-conductor devices with buried contacts
First Claim
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1. A semi-conductor device, comprising:
- a semi-conductor body having a textured surface defining an array of peaks and valleys;
a channel disposed in said textured surface and extending through a multitude of said peaks to a depth in proximity to said valleys;
a groove extending below said channel beneath said textured surface and said groove having a width narrower than said channel;
a metal conductive layer positioned in said groove; and
said metal conductive layer and said groove cooperating with each other to form a conductive buried contact substantially in the absence of zig-zag metallization of varying depths in said groove and channel.
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Abstract
Textured semi-conductor devices, such as macro textured buried-contact solar cells, are produced with special front contact trenches to increase efficiency and decrease costs. In order to produce the front contact trenches, front channels and narrower metallization grooves are cut in the semi-conductor body. The front contact trenches are plated to form attractive conductive buried contacts comprising flush metallization fingers and bus bars.
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Citations
19 Claims
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1. A semi-conductor device, comprising:
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a semi-conductor body having a textured surface defining an array of peaks and valleys; a channel disposed in said textured surface and extending through a multitude of said peaks to a depth in proximity to said valleys; a groove extending below said channel beneath said textured surface and said groove having a width narrower than said channel; a metal conductive layer positioned in said groove; and said metal conductive layer and said groove cooperating with each other to form a conductive buried contact substantially in the absence of zig-zag metallization of varying depths in said groove and channel. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A photovoltaic device, comprising:
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a silicon wafer selected from the group consisting of a polycrystalline wafer and a monocrystalline wafer, said silicon wafer providing a solar cell, said silicon wafer having a textured surface for decreasing reflection of light and increasing photovoltaic efficiency, and said textured surface having apexes and a base; said silicon wafer defining a substantially parallel set of channels providing front contact trenches extending substantially across said textured surface for enhancing trapping of light, said front contact trenches extending through a substantial amount of said apexes to a depth adjacent said base of said textured surface; insulation positioned within and substantially engaging and covering said front contact trenches to substantially prevent metal from contacting said front contact trenches so as to minimize shadowing, said insulation comprising at least one insulating material selected from the group consisting of silicon oxide, silicon nitride, and oxided materials; said silicon wafer defining a set of metallization grooves aligned in registration with and extending below said front contact trenches, said grooves extending beneath said base of said textured surface and spanning a width less than said front contact trenches, and said metallization grooves comprising metallization finger grooves and bus bar grooves; metal conductive plating substantially filling said metallization grooves, and providing metal conductive layers selected from the group consisting of nickel, copper, silver, and combinations thereof, and said metal conductive layers comprising metallization fingers and bus bars; said metallization grooves and said metal conductive layers cooperating with each other to form conductive buried contacts positioned substantially below the base of said textured surface, said conductive buried contacts having a substantially uniform depth below said front contact trenches and being substantially coplanar; and said front contact trenches and said conductive buried contacts cooperating with each other to enhance the open circuit voltage of said photovoltaic device. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A process for producing a photovoltaic device, comprising the steps of:
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preparing a silicon wafer selected from the group consisting of a P type polycrystalline wafer, a P type monocrystalline wafer, an N type polycrystalline wafer, and an N type monocrystalline wafer, into an array of solar cells with an enhanced efficiency by macro-texturing said silicon wafer to form a macro-textured surface having apexes providing peaks and valleys along a base to reduce reflection of incoming light; forming channels providing front contact trenches through a multitude of said apexes to enhance trapping of light, said channels being cut from said peaks to a depth in proximity to said valleys; forming an emitter and a photovoltaic junction in said wafer by diffusing opposite type polarity regions in said silicon wafer including an active region and an area beneath said front contact trenches, said opposite type polarity regions being selected from the group consisting of an N+ region for a P type polycrystalline wafer, an N+ region for a P type monocrystalline wafer, a P+ region for an N type polycrystalline wafer, and a P+ region for an N type monocrystalline wafer; insulating said front contact trenches with at least one insulating material selected from the group consisting of silicon oxide, silicon nitride, and oxided materials, to substantially prevent shadowing and metallization of said front contact trenches; cutting metallization grooves in said silicon wafer having a width less than said channels, said grooves being aligned and cut through said front contact trenches to a depth substantially below said valleys and base of said macro-textured surface; diffusing another opposite type polarity region in said silicon wafer beneath said metallization grooves, said another opposite polarity region being selected from the group consisting of an N++ region for a P type polycrystalline wafer, an N++ region for a P type monocrystalline wafer, a P++ region for an N type polycrystalline wafer; and
a P++ region for an N type monocrystalline wafer;forming conductive buried contacts having a substantially uniform depth by plating and substantially filling said grooves with a metal conductive layer selected from the group consisting of nickel, copper, silver, and combinations thereof; substantially preventing zig-zag metallization of varying depths in said groove and said front contact trenches. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification