Temperature sensing circuits

• US 6,084,462 A
• Filed: 08/06/1998
• Issued: 07/04/2000
• Est. Priority Date: 08/08/1997
• Status: Expired due to Term

• Current Assignee: Nexperia B.V. (Wingtech Technology Co., Ltd.)
• Original Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Inventors: Barker, Richard J.
• Primary Examiner(s): KIM, JUNG H
• Application Number:
  US09/129,809
• Time in Patent Office: 698 Days
• Field of Search: 327/512, 327/513, 327/78, 327/83, 327/68, 327/65, 327/89, 323/312, 323/315, 323/316, 324/104, 324/105
• US Class Current: 327/512
• CPC Class Codes: G01K 3/005 Circuits arrangements for indicating a predetermined temperature fire detection G08B17/00
• CPC Class Codes: G01K 7/01 using semiconducting elements having PN junctions G01K7/02, G01K7/16, G01K7/30 take precedence
• CPC Class Codes: H01L 27/0248 for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Abstract

A temperature sensing circuit suitable for integration with a power semiconductor device (MOSFET/IGBT) includes temperature-sensing p-n diode means (D1, D2, etc . . . ) integrated together with first and second IGFETs (M1 and M2). A current path through the temperature-sensing p-n diode means (D1, D2, etc . . . ) provides a voltage drop (Vf) having a negative temperature coefficient. The IGFETs (M1 and M2) are coupled in separate current paths from each other so as to have separate gate-to-source voltage signals (Vgs1 and Vgs2) between their source and gate electrodes (s and g). The gate-to-source voltage (Vgs1) of the first IGFET (M1) has a negative temperature coefficient of greater magnitude than the temperature coefficient (if any) of the gate-to-source voltage (Vgs2) of the second IGFET (M2). One of the source and gate electrodes (s or g) of the first IGFET (M1) is coupled to the p-n diode means (D1, D2, etc . . . ), and the first and second IGFETs (M1 and M2) are coupled together as or with a comparator (COMP) to compare the voltage drop (Vf) from the p-n diode means (D1, D2, etc . . . ) with any difference between the gate-to-source voltages (Vgs1 and Vgs2) of the IGFETs (M1 and M2) and so provide a logic output signal (Tabs) indicative of a sensed temperature in relation to a temperature threshold. The IGFETs (M1 and M2) are of the same insulated gate field effect type as each other, typically an N-channel enhancement type, so that the second IGFET (M2) has a gate threshold value (V_T) which balances that of the first IGFET (M1) and provides the comparator (COMP) with a precision reference level corresponding to the temperature threshold and less susceptible to variation in process parameters associated with the IGFET threshold voltages.

Claims

1. A temperature sensing circuit comprising a current path through a temperature-sensing p-n diode means to provide a voltage drop across said diode means having a negative temperature coefficient, and first and second transistors of a same insulated gate field effect type as each other and coupled in separate current paths from each other so as to have respective gate-to-source voltage signals between their source and gate electrodes, the gate-to-source voltage of the first transistor having a negative temperature coefficient of greater magnitude than a temperature coefficient of the gate-to-source voltage of the second transistor, one of the source and gate electrodes of the first transistor being coupled to the p-n diode means, and the first and second transistors being coupled together in a comparator circuit which compares the voltage drop from the p-n diode means with a difference between the gate-to-source voltage signals of the first and second transistors to provide an output signal indicative of a sensed temperature in relation to a threshold temperature, the second transistor having a gate threshold value which balances that of the first transistor so as to provide the comparator circuit with a reference voltage level corresponding to the threshold temperature.

2. A temperature sensing circuit as claimed in claim 1, wherein the comparator circuit comprises the first and second transistors coupled together to compare the voltage drop from the p-n diode means with any difference between their gate-to-source voltage signals, and the sensed-temperature output signal of the comparator circuit is derived from a drain electrode of one of the first and second transistors.

3. A temperature sensing circuit as claimed in claim 2, wherein the p-n diode means is connected in a series combination with the main current path of the first transistor to provide a temperature sense section, and the gate electrode of the second transistor receives an input signal from the series combination.

4. A temperature sensing circuit as claimed in claim 3, wherein the source electrodes of the first and second transistors are coupled to a common voltage supply line, and the coupling of the source electrode of the second transistor to the common voltage supply line comprises an additional series resistance which is absent from that of the first transistor to increase the switching threshold voltage of the second transistor relative to that of the first transistor.

5. A temperature sensing circuit as claimed in claim 2, wherein the first and second transistors are coupled together to form the comparator circuit, and the p-n diode means is coupled between the gate electrodes of the first and second transistors.

6. A temperature sensing circuit as claimed in claim 1, wherein the drain electrode of the first transistor provides the sensed-temperature output signal.

7. A temperature sensing circuit as claimed in claim 1, wherein the negative temperature coefficient of the voltage drop from the p-n diode means is of greater magnitude than the negative temperature coefficient of the gate-to-source voltage of the first transistor.

8. A temperature sensing circuit as claimed in claim 7, wherein the p-n diode means comprises a series combination of forward-biased p-n diodes.

9. A temperature sensing circuit as claimed in claim 1, wherein the first transistor is operated in its sub-threshold region to provide its negative temperature coefficient, and the second transistor is operated in an area of its square law region.

10. A temperature sensing circuit as claimed in claim 1, which is integrated with a power semiconductor device and senses the operating temperature of the power semiconductor device, wherein the p-n diode means and at least the first transistor are located in the vicinity of a heat generating area of the power semiconductor device.